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  • 1
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Polymer International 35 (1994), S. 335-359 
    ISSN: 0959-8103
    Keywords: polymide-1010 ; radiation effect ; wide angle X-ray diffraction ; crystal damage ; amorphotization ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Radiation effects on polyamide-1010 specimens having various states of aggregation were studied using wide angle X-ray diffraction, electron spin resonance, calorific and sol measurement techniques. Experimental results indicated that chain crosslinking and scission of the irradiated polyamide-1010 occurred mainly in the amorphous region and on the crystal surface. The radiation-induced crystal damage and amorphotization started from the crystal surface (or interface) and extended into the inner portion of the crystal with increasing radiation dose. It is believed that the interface between crystalline and amorphous regions was the main region wherein free radicals were trapped.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    New York : Wiley-Blackwell
    Die Makromolekulare Chemie 192 (1991), S. 1255-1261 
    ISSN: 0025-116X
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: The photosensitivity in cis-polyphenylacetylene (cis-PPA, polymerized with rare-earth catalysts) can be significantly enhanced by doping the PPA with I2 or FeCl3 and sensitizing with 4-isothiocyanatofluorescein (F-II) or 2,4,7-trinitro-9-fluorenone (TNF), which are powerful sensitizers. The electrophotographic photoreceptor (P/R) device with cis-PPA + F-II (on Al substrate) appeared preferable in photosensitivity enhancement and showed good photosensitivity: dark decay 1,8 V/s; maximum rate of discharge 321 V/s; residual surface potential 22 V; discharge 89, 1%; photosensitivity 2,96 s-1. This is a new “family” of photosensitive materials which can be used in a duplicator.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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