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  • 1
    Electronic Resource
    Electronic Resource
    Structure and magnetic properties of Sm2(Fe1−xAlx)17Ny compounds : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5890-5892 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By means of x-ray phase analysis, it is shown that all the interstitial Sm2(Fe1−xAlx)17Ny nitrides and the parent compounds crystallize in Th2Zn17-type structure for x≤0.4. The lattice constants of the parent compounds increase linearly with Al concentration. The introduction of nitrogen leads to a further increase in lattice constants, but the amplitude of the increase decreases with increasing Al concentration. The introduction of nitrogen leads to an increase of Curie temperature Tc . The composition dependence of Tc of the parent compounds exhibits a maximum, whereas Tc of the nitride decreases monotonously with increasing Al concentration from 750 K for x=0 to 313 K for x=0.4. The mean magnetic moments of iron ions in both nitrides and parents decrease monotonously with increasing Al concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353512
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetic anisotropy of RFe10Si2 alloys : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6116-6118 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetocrystalline anisotropy, Curie temperatures, spin reorientation temperatures, and first-order magnetization processes (FOMP) are reported for RFe10Si2 compounds with R=Y, Gd, Tb, Dy, Ho, Er, and Lu. The saturation magnetizations of them at 1.5 K are determined. The value of the R-Fe magnetic-coupling constant JRFe/k, derived by a mean-field analysis of the Curie temperatures, is about −10 K. A tentative spin-phase diagram for the RFe10Si2 series is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350040
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  • 3
    Electronic Resource
    Electronic Resource
    Structure and magnetic properties of TbMn6−xAlxSn6 compounds (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 760-763 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the present work, the influence of the substitution of Al for Mn on the structure and magnetic properties of TbMn6−xAlxSn6 compounds was investigated. With increasing Al concentration the lattice constants a, c, and the unit-cell volume V decrease monotonically. The TbMn6−xAlxSn6 compounds exhibit ferrimagnetic ordering. The magnetic ordering temperature first decreases with increasing Al content up to x=1.5, then increases with further increasing Al content. As for the unsubstituted material, it was found that this series of compounds exhibits a second magnetic transition at lower temperature that is attributed to spin reorientation. The spin-reorientation temperature and the magnetic anisotropy field first decrease with increasing Al content, go through a minimum at x=0.5, then increase with further increasing Al content. The saturation magnetization decreases monotonically with increasing Al content. Two metamagnetic transitions are found in TbMn6Sn6 compounds, one at 0.44 T, and the other at about 0.16 T. With increasing Al content only one metamagnetic transition remains. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365855
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  • 4
    Electronic Resource
    Electronic Resource
    Carbon nitride films on diamond layers and their thermal behavior (2000)
    Springer
    Journal of materials science 35 (2000), S. 2209-2213 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A CN/diamond composite structure on silicon substrate was obtained by a two-step technique in preparing polycrystalline diamond layers by microwave plasma assisted chemical vapor deposition and then CN films by reactive rf magnetron sputtering. The samples were annealed at different temperatures in the range of 200 to 800 °C, respectively. All the as-grown and annealed CN films, which fully covered the diamond underlayer with the formation of a rather adhesive interface, exhibited amorphous nature uniquely. X-ray photoelectron spectroscopy and energy-dispersive x-ray studies both revealed that the nitrogen concentration of the films decreases after annealed at high temperature. Infrared spectra also suggested the thermal modifications on the content and structure of the CN films. The electric resistivity varies in a large range as the annealing temperature increasing, and confirmed the bonding configuration in favor of a graphite-like structure at high temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004718724457
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