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  • 1
    Electronic Resource
    Electronic Resource
    Influence of Sn resonance states on the electrical homogeneity of Bi2Te3 single crystals (2000)
    Springer
    Semiconductors 34 (2000), S. 1363-1364 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract An unusually high homogeneity of electrical properties was found in Sn-doped Bi2Te3 single crystals. The Seebeck coefficient, which is sensitive to fluctuations in charge carrier concentration, remains unchanged even when the amount of introduced Sn impurity is increased. This fact is explained in terms of the model of resonance impurity states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1331791
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of inhomogeneities of Bi2T3 crystals on the transverse Nernst-Ettingshausen effect (1997)
    Springer
    Semiconductors 31 (1997), S. 375-377 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The effect of inhomogeneities in p-Bi2Te3 crystals, grown by different methods, on the coefficients of the transverse Nernst-Ettingshausen and Hall effects has been studied. The degree of homogeneity of the crystals was estimated on the basis of thermo-emf (Seebeck coefficient) data. It was established that the concentration dependences of the Nernst-Ettingshausen coefficient at T=300 K in homogeneous and inhomogeneous samples are different. This makes it possible to use the Nernst-Ettingshausen effect data for quality assessment of Bi2Te3 crystals. It is shown that the anomalous drop of the Hall coefficient with increasing temperature in a number of samples is due to inhomogeneities, and in Sn-doped Bi2Te3 crystals it is due to the existence of an impurity level against the background of the valence-band states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187166
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of phonon scattering from neutral and charged impurity centers on the lattice heat conductivity of PbTe:(Tl, Na) (1998)
    Springer
    Physics of the solid state 40 (1998), S. 1098-1100 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Experimental data on the effect of thallium and sodium impurities on the lattice heat conductivity of PbTe at room temperature are reported. Because the lattice of lead chalcogenides is strongly polarized near charged impurities, the effect of impurities on the lattice heat conductivity depends substantially on their charge state. This property of the material has been used to determine the charge state of the thallium impurity in PbTe. The results obtained argue for a model of quasi-local thallium-impurity states which assumes low electron-correlation energy at an impurity center.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130496
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  • 4
    Electronic Resource
    Electronic Resource
    Specific features of Bi2Te3 doping with Sn (1998)
    Springer
    Physics of the solid state 40 (1998), S. 1297-1300 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The effect of doping bismuth telluride with tin, on its electrophysical properties, has been studied. It is shown that the main features in the transport coefficients of Bi2Te3:Sn can be explained by the existence of resonant Sn states within the valence band. The existence of resonant Sn states was confirmed by codoping Bi2Te3:Sn with the electroactive impurity I.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130548
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of low-level Ge additions on the superconducting transition in PbTe:Tl (1998)
    Springer
    Physics of the solid state 40 (1998), S. 1096-1097 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A study is reported of the effect of low-level germanium additions (∼0.01–0.1 at. %) on the parameters of the superconducting transition, viz. the critical temperature T c, the second critical magnetic field H c2, and $$\left| {{{dH_{c2} } \mathord{\left/ {\vphantom {{dH_{c2} } {dT}}} \right. \kern-\nulldelimiterspace} {dT}}} \right|_{T \to T_c } $$ in PbTe doped with 2 at. % Tl, which are derived from the dependence of the electrical resistivity of a sample on temperature (0.4–4.2 K) and magnetic field (0–1.3 T). The discontinuity revealed by experimental data is related to the onset of a Ge-induced structural phase transition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130495
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  • 6
    Electronic Resource
    Electronic Resource
    Electron density redistribution in Sn-doped Bi2Te3 (1999)
    Springer
    Physics of the solid state 41 (1999), S. 1805-1808 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract X-ray photoelectron spectroscopy is used to investigate the redistribution of the density of electronic states in the valence band, and of the binding energies and chemical shifts of core levels in bismuth telluride caused by introduction of impurity tin atoms. A substantial increase in the density of electronic states below the valence-band top at energies μ≈15–30 meV has been revealed. This feature in the energy spectrum accounts for the unusual behavior of the kinetic coefficients in p-Bi2Te3:Sn crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1131102
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  • 7
    Electronic Resource
    Electronic Resource
    Investigation of the electrical homogeneity of lead telluride (1985)
    Springer
    Russian physics journal 28 (1985), S. 713-718 
    Details
    ISSN: 1573-9228
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Inhomogeneities in the charge-carrier concentration are studied in lead telluride specimens fabricated by different technological methods (the Bridgman method, pressing, extrusion). Large-scale inhomogeneities (∼100–1000 μm) were exposed by the sounding method of measuring the specific resistivity and the thermal probe method, while the fine-scale inhomogeneities (1–3 μm) were exposed by the method of studying the field dependence of the magnetoresistivity. The quantitative analysis performed of the influence of concentration inhomogeneities on the kinetic coefficients (σ, ρ, α, Q) and on the thermoelectrical quality (z) of the lead telluride showed that even in the most inhomogeneous specimens the effective mass of the states density of the kinetic phenomena is determined with a sufficient degree of accuracy (Δmd * ⊃ -4%, while the efficiency parameter (z) in specimens with elevated homogeneity (fabricated by the extrusion method) should increase 15–20% as compared with the hot-pressed specimens.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00895520
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