ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The phenomenon of hysteresis of magnetoresistance in neutron-transmutation-doped Ge:Ga in the region of hopping transport over the Coulomb-gap states was observed and studied experimentally. The hysteresis is accompanied by an abrupt decrease in the resistivity in a magnetic field of about 800 Oe after a preliminary magnetization of the samples in the fields exceeding 1 kOe. The relative magnitude of the resistivity jump increases with decreasing temperature. This effect is observed on the insulator side of the metal-insulator transition, which occurs for a Ga concentration of 1.85×1017 cm−3. The main special features of the observed phenomenon were studied, and plausible explanations of this phenomenon are offered.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1188070
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