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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Physics of the solid state 42 (2000), S. 594-602 
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The current-voltage characteristics of the metal-dielectric composite have been investigated in the range of the resistive state near the superconducting transition temperature T c . The composite structure can be represented as a face-centered cubic lattice, which involves a large number of weakly linked indium nanograins and is stabilized in structural cavities of opal. The response to microwave radiation is used to characterize the resistive state of the composite. The comparative investigation into the current-voltage characteristics and the response of the composite to microwave radiation makes it possible to conclude that the weak links are superconducting in the region of critical current (I c ) of the composite as a whole. The transition of weak links to the resistive state occurs at currents immediately preceding the transition of the composite from the resistive state to the ohmic state. The model of resistivity of the indium-opal composite is proposed on the basis of morphological examinations. According to this model, the energy dissipation in the resistive state is brought about by the quasi-discrete (due to the quantization of the magnetic flux in circuits of a three-dimensional lattice comprised of multiply connected grains) redistribution of transport current over the cross-section of composite.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Physics of the solid state 42 (2000), S. 1215-1217 
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A study of the Hall and Seebeck coefficients and of resistivity has been carried out on an Sn0.62Pb0.33Ge0.05Te alloy doped by 5 and 10 at. % In. A superconducting transition with the maximum critical temperature T C∼4 K has been discovered in samples with hole concentrations p≥1×1021 cm−3. The dependence of T C on hole concentration has been established to be of a threshold nature. The onset of superconductivity is accompanied practically simultaneously by a growth of the resistivity and a sharp drop of the Seebeck coefficient. These features in the experimental data indicate the existence of a band of In resonance states within the allowed valence-band spectrum and strong resonance hole scattering to impurity states. The threshold character of the T C(p) dependence is connected with the holes filling the resonance states. A positive correlation between the resonance scattering intensity and the critical temperature is observed.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Physics of the solid state 40 (1998), S. 1096-1097 
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A study is reported of the effect of low-level germanium additions (∼0.01–0.1 at. %) on the parameters of the superconducting transition, viz. the critical temperature T c, the second critical magnetic field H c2, and $$\left| {{{dH_{c2} } \mathord{\left/ {\vphantom {{dH_{c2} } {dT}}} \right. \kern-\nulldelimiterspace} {dT}}} \right|_{T \to T_c } $$ in PbTe doped with 2 at. % Tl, which are derived from the dependence of the electrical resistivity of a sample on temperature (0.4–4.2 K) and magnetic field (0–1.3 T). The discontinuity revealed by experimental data is related to the onset of a Ge-induced structural phase transition.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A low-temperature (0.4–4.2 K) measurement of the temperature dependences of the resistivity of two series of samples, SnTe1+y and Sn0.8Pb0.2Te1+y solid solution, doped with 5 at.% In, is reported. The parameters of the superconducting transition, namely, the critical temperatures T c and the second critical magnetic field H c2, and their dependences on tellurium excess (0⩽y⩽0.06) have been determined. The observed variation of the critical parameters with increasing tellurium excess in the samples is associated with a change in the filling by holes of the indium-impurity resonance states.
    Type of Medium: Electronic Resource
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