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  • 1
    Electronic Resource
    Electronic Resource
    Interface phenomena and optical properties of structurally confined InP quantum wire ensembles (1997)
    Springer
    Physics of the solid state 39 (1997), S. 641-648 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Three-dimensional regular ensembles of InP quantum wires have been produced in channels of porous dielectric matrices by metal-organic chemical vapor deposition. These matrices differ both in the diameter of the channels (0.7, 3, and 8 nm) and in their spatial arrangement. The InP layer thickness does not exceed two-three monolayers. A comparative study of Raman, optical absorption, and photoluminescence spectra revealed the dependence of the optical properties of these quantum wires on interface effects, namely, atomic interaction in the wires, wire-matrix, and wire-wire interactions. It is shown that the wire-matrix interaction distorts the InP lattice, broadens the wire electronic density-of-states spectrum in the vicinity of the fundamental gap, and redistributes the relaxation of photoinduced excitations among states belonging to the wire itself and to defects in the matrix bound to the wire.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1129945
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  • 2
    Electronic Resource
    Electronic Resource
    Current-induced suppression of superconductivity in a three-dimensional lattice of weakly linked indium grains in opal (2000)
    Springer
    Physics of the solid state 42 (2000), S. 594-602 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The current-voltage characteristics of the metal-dielectric composite have been investigated in the range of the resistive state near the superconducting transition temperature T c . The composite structure can be represented as a face-centered cubic lattice, which involves a large number of weakly linked indium nanograins and is stabilized in structural cavities of opal. The response to microwave radiation is used to characterize the resistive state of the composite. The comparative investigation into the current-voltage characteristics and the response of the composite to microwave radiation makes it possible to conclude that the weak links are superconducting in the region of critical current (I c ) of the composite as a whole. The transition of weak links to the resistive state occurs at currents immediately preceding the transition of the composite from the resistive state to the ohmic state. The model of resistivity of the indium-opal composite is proposed on the basis of morphological examinations. According to this model, the energy dissipation in the resistive state is brought about by the quasi-discrete (due to the quantization of the magnetic flux in circuits of a three-dimensional lattice comprised of multiply connected grains) redistribution of transport current over the cross-section of composite.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1131255
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  • 3
    Electronic Resource
    Electronic Resource
    Optical properties of self-assembled arrays of InP quantum wires confined in nanotubes of chrysotile asbestos (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 380-385 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three-dimensional arrays of structurally confined InP wire-like nanostructures were grown in channels (nanotubes) of a chrysotile asbestos matrix by metalorganic chemical vapor deposition. The formation of the InP compound was confirmed by absorption spectroscopy, X-ray diffraction and Raman scattering. It is shown that the density of states around the band edge increases with the InP loading of the matrix. Photoluminescence spectra of the asbestos filled in with InP consist mainly of two bands: a high energy band which is interpreted to be associated with charge transfer from InP to defect states of the asbestos and a low energy band which is associated with energy relaxation in the InP deposit itself. We show that the optical properties of this material are dominated by the size and dimensionality of the pore system of the matrix for heavy loading and by the semiconductor-to-matrix interface for light loading of the matrix with InP. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365823
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  • 4
    Electronic Resource
    Electronic Resource
    Photonic band-gap effects upon the light emission from a dye–polymer–opal composite (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1057-1059 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A polymeric photonic crystal formed by impregnating an opal with a Coumarin 6 dye containing polymer has been prepared and its emission properties studied by angular-resolved photoluminescence. A strong spectral redistribution of the luminescence intensity was observed in the dye-polymer-opal compared to that of the dye-polymer reference sample. The emission spectrum shows a marked distortion compared with the reference sample, which changes with the rotation of the crystal due to the angular dispersion of the stop band. Under increasing optical pumping power, a band of amplified spontaneous emission was observed at the stop-band edge. The angular dispersion of the stop band in the luminescence observed from the back surface exhibits in a strong directionality at the maximum of the dye emission band. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124595
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  • 5
    Electronic Resource
    Electronic Resource
    Comment on "Enhancement of optical gain of semiconductors embedded in three-dimensional photonic crystals" [Appl. Phys. Lett. 71, 1616 (1997)] (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 550-551 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121929
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  • 6
    Electronic Resource
    Electronic Resource
    Eu3+ emission in an anisotropic photonic band gap environment (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1656-1658 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Eu3+ ions have been incorporated into the silica skeleton of synthetic opal. The effect of the anisotropic photonic band gap structure upon the emission characteristics has been studied in the case where the emission bandwidth is narrower than the stop-band. Either suppression or enhancement of the spontaneous emission at the wavelength of the radiative transition has been observed, depending on the relative position of the emission band and the stop-band. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126126
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  • 7
    Electronic Resource
    Electronic Resource
    Anisotropic photoluminescence in incomplete three-dimensional photonic band-gap environments (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1821-1823 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of an incomplete three-dimensional photonic band-gap structure upon the wideband photoluminescence from bare opal and opal impregnated with ZnS has been studied by means of angular-resolved photoluminescence. It has been shown that the photoluminescence becomes anisotropic in accordance with the angular dispersion of the stop band. Suppression of the spontaneous emission in the stop-band energy region and amplification of the spontaneous emission at the edge of the stop band have both been demonstrated. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123097
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  • 8
    Electronic Resource
    Electronic Resource
    Emission in a SnS2 inverted opaline photonic crystal (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 731-733 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence of a dye embedded in the three-dimensional SnS2 inverted opal has been studied. Changes of the emission spectrum compared with the free-space dye emission was observed in the stop-band frequency range in accord with reflectance/transmission spectra of this photonic crystal. The angular-dependent component, due to the Bragg stop band, and the angular-independent component, which is, possibly, related to the minimum in the density of photon states, have been distinguished in the dye emission spectrum. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389825
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  • 9
    Electronic Resource
    Electronic Resource
    Enhancement of the photonic gap of opal-based three-dimensional gratings (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2091-2093 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The "semimetallic" photonic band gap formed in a synthetic opal has been increased by depositing a layer (InP or TiO2) with high refractive index on the inner surface of opal voids. Reflectance spectra of the composites (nanolayers assembled within grating voids) are correlated with both the photonic structure of the opal and electronic structure of the semiconductor. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119081
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  • 10
    Electronic Resource
    Electronic Resource
    Magnetoresistance size effects in a three-dimensional lattice of InSb quantum dots (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2897-2899 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetotransport was studied on three-dimensional lattices of weakly coupled InSb quantum dots (QDs) for different regimes of conductivity. Classical negative magnetoresistance was observed both in high- and low-temperature regimes; for the latter it is accompanied by quantum size effect. The correlation with the geometry of the dot lattice and its ordering was found. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117355
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