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  • Articles: DFG German National Licenses  (36)
  • 1
    Electronic Resource
    Electronic Resource
    Time-resolved photoluminescence of undoped InP (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4249-4251 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Energy and time-resolved photoluminescence data have been obtained for nominally undoped (n 4.5×1015 cm−3) bulk InP grown by the vertical-gradient freeze method. The data were taken as a function of temperature, from 80 to 290 K, and analyzed using a solution to the continuity equation. The resulting lifetime values range from 300 ns to 3.2 μs, and surface recombination velocities were fund to be on the order of 103 cm/s. The temperature dependence can be explained by assuming a radiatively limited recombination with a resulting B coefficient ≥5.9×10−11 cm3/s at 300 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355962
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  • 2
    Electronic Resource
    Electronic Resource
    Minority-carrier lifetime in ITO/InP heterojunctions (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1916-1921 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relationship between photoluminescence lifetime and minority-carrier lifetime is derived for window/absorber heterojunctions by the method of Laplace transforms. The model includes the effects of diffusion to the depletion region and self-absorption of the emitted radiation. The model is applied to InP photoluminescence generated by pulsed laser excitation of indium-tin-oxide (ITO)/InP heterojunctions. The photoluminescence lifetime of a device with NA=1×1016 cm−3 is about 21 ns. The bulk lifetime of the device can be fit with a lifetime of about 30 ns. The lifetime in the unprocessed substrate exceeds 200 ns indicating that recombination is induced by ITO processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341743
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  • 3
    Electronic Resource
    Electronic Resource
    Deep-level impurities in CdTe/CdS thin-film solar cells (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7175-7178 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied deep-level impurities in CdTe/CdS thin-film solar cells by capacitance–voltage (C–V), deep-level transient spectroscopy (DLTS), and optical DLTS (ODLTS). CdTe devices were grown by close-spaced sublimation. Using DLTS, a dominant electron trap and two hole traps were observed. These traps are designated as E1 at EC−0.28 eV, H1 at EV+0.34 eV, and H2 at EV+0.45 eV. The presence of the E1 and H1 trap levels was confirmed by ODLTS. The H1 trap level is due to Cu-induced substitutional defects. The E1 trap level is believed to be a deep donor and is attributed to the doubly ionized interstitial Cu or a Cu complex. The E1 trap is an effective recombination center and is a lifetime killer. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326465
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  • 4
    Electronic Resource
    Electronic Resource
    A Hall probe technique for characterizing high-temperature superconductors (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2259-2262 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Thin-film GaAs Hall probes were fabricated by molecular beam epitaxy technology. A contactless technique was developed to characterize thin-film, high-temperature superconducting (HTSC) materials. The Hall probes detected the ac magnetic flux penetration through the high-temperature superconducting materials. The Hall detector has advantages over the mutual inductance magnetic flux detector.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143147
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  • 5
    Electronic Resource
    Electronic Resource
    Influence of junctions on photoluminescence decay in thin-film devices (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2937-2941 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence lifetime of III-V thin films is a major tool for the determination of minority-carrier lifetime. Prior work has dealt with the effects of surface recombination for various device geometries. Other work has shown the effect of self-absorption and photon recycling on the effective lifetime. We describe deep homojunctions thin-film devices. Model calculations show that the effective lifetime, as measured in the photoluminescence experiment, is always less than the bulk minority-carrier lifetime. In high-mobility materials, the effective photoluminescence lifetime may be dominated by diffusion and unrelated to recombination. An analysis of the data produces the minority-carrier mobility.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339376
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  • 6
    Electronic Resource
    Electronic Resource
    Photocapacitance of CdZnS/CuInSe2 thin-film heterojunctions (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 181-185 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photocapacitance of a thin-film CdZnS/CuInSe2 heterojunction was observed under white light excitation. Capacitance increases were observed that were indicative of minority-carrier trapping in the junction. Emission spectroscopy indicated that a distribution of traps produce this signal. Analysis of the data indicate trap distributions ranging from 5×1014 cm−3 to 1.6×1015 cm−3 in the bulk and 3.3×1011 cm−2 at the surface. Photovoltaic efficiency was inversely related to the photocapacitance signal. A model relates deep electron interface states to a decrease in open-circuit voltage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336859
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  • 7
    Electronic Resource
    Electronic Resource
    Intensity-dependent minority-carrier lifetime in III-V semiconductors due to saturation of recombination centers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 225-231 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The minority-carrier lifetime has been measured by time-resolved photoluminescence in a variety of III-V epitaxial material including GaAs and AlxGa1−xAs. In cases where Shockley–Read–Hall recombination is dominant, the measured lifetimes are dependent upon the intensity of the excitation source. These lifetime effects can be described by a Shockley–Read–Hall model that includes the injection dependence of the recombination. As the lifetimes increase with the injection level, we describe the effects as the saturation of recombination centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350315
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  • 8
    Electronic Resource
    Electronic Resource
    Minority-carrier lifetime in AlxGa1−xAs grown by molecular-beam epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3094-3096 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlxGa1−xAs (x〉0.30) double heterostructures are grown by molecular-beam epitaxy (MBE) and the minority-carrier lifetimes are measured by time-resolved photoluminescence. The data indicate that the minority-carrier lifetimes in high aluminum (x〉0.30) AlxGa1−xAs grown by MBE are comparable to the previously published lifetimes of material grown by liquid-phase epitaxy. The lifetimes in MBE materials appear to be somewhat larger than those measured in materials grown by metalorganic chemical vapor deposition. Factors affecting AlGaAs minority-carrier lifetime, such as the growth temperature, the aluminum concentration, and the confinement layer composition will be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348573
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  • 9
    Electronic Resource
    Electronic Resource
    A study of minority carrier lifetime versus doping concentration in n-type GaAs grown by metalorganic chemical vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1436-1442 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved photoluminescence decay measurements are used to explore minority carrier recombination in n-type GaAs grown by metalorganic chemical vapor deposition, and doped with selenium to produce electron concentrations from 1.3×1017 cm−3 to 3.8×1018 cm−3. For electron densities n0〈1018 cm−3, the lifetime is found to be controlled by radiative recombination and photon recycling with no evidence of Shockley–Read–Hall recombination. For higher electron densities, samples show evidence of Shockley–Read–Hall recombination as reflected in the intensity dependence of the photoluminescence decay. Still, we find that radiative recombination and photon recycling are important for all electron concentrations studied, and no evidence for Auger recombination was observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351704
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  • 10
    Electronic Resource
    Electronic Resource
    Measurement of electron diffusion lengths in ITO/p-InP by surface photocurrents (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3528-3531 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron diffusion length is deduced in n-indium tin oxide/p-InP heterojunctions by a short-circuit photocurrent technique. The technique involved the nonlinear least-squares fit of the photocurrent and junction capacitance to a simple model. The absorption coefficient of the monochromatic light is also produced by the fit. This produces an electron effective diffusion length in the p-InP which varies from about 1.0 μm for highly absorbed light up to about 8.0 μm for deeply penetrating light.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341491
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