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  • Artikel: DFG Deutsche Nationallizenzen  (49)
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  • Artikel: DFG Deutsche Nationallizenzen  (49)
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  • 1
    Digitale Medien
    Digitale Medien
    Electrical and structural properties of silicon layers heavily damaged by ion implantation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 61-68 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effects of high-dose silicon and arsenic ion implantation on the electrical and structural properties of silicon layers are investigated. Combining electrical, transmission electron microscopy, and triple-crystal x-ray-diffraction measurements made it possible to characterize the effects of thermal annealing both on defect annihilation mechanisms and on electrical doping activation. It is clearly shown that a low-temperature (≤450 °C) electrical activation process is taking place in the amorphous surface layer induced by high-dose ion implantation. This phenomenon is found to be completely independent of the recrystallization regrowth by solid phase epitaxy which occurs at higher temperature. This electrical activation process is found to be well described by a local relaxation model involving point defect migration.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.352147
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  • 2
    Digitale Medien
    Digitale Medien
    Properties of the TiSi2/p+n structures formed by ion implantation through silicide and rapid thermal annealing (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 73-77 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Silicided p+n junctions and contact resistivity test structures were formed by implantation of BF2 through TiSi2 in crystalline as well as in Si+ or Ge+ preamorphized silicon. A subsequent rapid thermal annealing at 950 °C in nitrogen atmosphere was performed to activate the dopant, to remove the ion implantation damage, to increase the silicide conductivity, and to improve the electrical characteristics of the junction. Very low leakage currents and low contact resistivities were measured on samples without preamorphization. With Si+ or Ge+ implantation the channeling of boron was suppressed but residual defects below the original amorphous-crystalline (a-c) interface gave rise to an increased leakage current. A Ti-related defect level was found by deep level transient spectroscopy in the silicon substrate up to a depth of some micrometers.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.352097
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  • 3
    Digitale Medien
    Digitale Medien
    Raman investigations of elastic strain relief in Si1−xGex layers on patterned silicon substrate (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7223-7227 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The appearance of an elastic strain relief in narrow mesalike patterned Si1−xGex heteroepitaxial layers is shown. A Si1−xGex layer was deposited on a mesalike patterned Si(001) substrate by molecular-beam epitaxy. The germanium concentration was x=14%, the layer thickness h=96 μm was several times larger than the critical thickness hc. The layers on top of the mesas were investigated by Raman microscopy. The Raman line shifts of the wider mesas and their dislocation densities agree with the predicted strain reduction by generation of misfit dislocations. On the narrow mesas an additional shift of the Raman lines toward the unstrained alloylike Raman frequency was measured. It is caused by an elastic strain relief on top of the narrow mesas. An estimation of the expected Raman line shifts is given assuming an uniaxially strained SiGe layer. The calculated line shifts agree sufficiently with the measured values. The elastic strain relief reduces the free energy of the layer-substrate system, reduces the stress in the pseudomorphic layer, and stabilizes the structure. The effect arises if the mesas are narrower than 2 μm. It is therefore of interest in all submicrometer technologies.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.355335
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  • 4
    Digitale Medien
    Digitale Medien
    Measurement of stress and relaxation in Si1−xGex layers by Raman line shift and x-ray diffraction (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3177-3180 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Epitaxial Si1−xGex layers, grown by molecular beam epitaxy (MBE) and by chemical vapor deposition (CVD) on Si(001) substrates, with thicknesses between 20 and 50 nm and Ge contents from 4% to 23% were investigated by micro Raman backscattering, x-ray double crystal diffractometry, and transmission electron microscopy. A quite simple phenomenological model was developed to derive the Raman shift of the Si–Si mode as a function of the germanium content for the two limiting cases, the pseudomorphically strained layer, and the alloy-like stress-free layer. A measure for the degree of relaxation can be obtained from the measured Raman shift and from the independently determined germanium content, using the results of the model. The degree of relaxation was determined for a number of CVD- and MBE-grown Si1−xGex layers. The as-grown pseudomorphic layers relax partially after annealing at 900 °C. The Raman scattering allows the monitoring of the development of relaxation during the semiconductor device processing.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.354587
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  • 5
    Digitale Medien
    Digitale Medien
    Investigation of the high temperature behavior of strained Si1−yCy /Si heterostructures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1934-1937 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report on x-ray diffraction measurements of the substitutional carbon content y in pseudomorphic Si1−yCy (y〈0.02) layers grown on (100)-oriented silicon substrate. The samples were grown by molecular beam epitaxy and investigated during post growth annealing in situ by an x-ray powder diffractometer. Despite the tensile strain in the 100-nm-thick layers and the high carbon supersaturation, the samples were stable up to 800 °C. Beyond this temperature range, the substitutional carbon content decreased exponentially during isothermal annealing. This effect can be explained by the precipitation of the carbon and the nucleation and diffusion limited growth of SiC nanocrystals. Since no strain relief by the introduction of misfit dislocations was detectible, we conclude that contrary to the mechanism of strain relief in Si1−xGex, in comparably strained Si1−yCy epilayers, the main high temperature process is precipitation. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.358826
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  • 6
    Digitale Medien
    Digitale Medien
    X-ray in situ observation of relaxation and diffusion processes in Si1−xGex layers on silicon substrates (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2191-2196 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A method is presented to simultaneously investigate in situ the relaxation and diffusion behavior of Si1−xGex layers on silicon substrates using a conventional x-ray powder diffractometer with a high-temperature attachment. The method allows the direct determination of the time and temperature dependence of the relaxation and of the maximum Ge content. The diffusivity of Ge in silicon was studied by x-ray diffraction and secondary ion mass spectroscopy measurements. A nonlinear dependence of the effective diffusion coefficient on the Ge content was deduced by solving a diffusion equation.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.357633
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  • 7
    Digitale Medien
    Digitale Medien
    Unambiguous determination of crystal-lattice strains in epitaxially grown SiGe/Si multilayers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6683-6688 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A new method for unambiguous reconstruction of crystal-lattice strains in epitaxially grown layers from high-resolution x-ray diffraction data is proposed. The technique uses x-ray diffracted intensity profiles collected for two different radiation wavelengths. We enhance the theory for the previously developed algorithm for model-independent determination of crystal-lattice strain profiles in single crystals with epitaxially grown top-surface layers. The method relies on the retrieval of the scattered x-ray wave phase from its intensity profile via a logarithmic Hilbert transform. This phase-retrieval technique is always associated with the problem of complex polynomial root finding. A practical procedure for the mapping of complex polynomial roots is proposed to distinguish true and virtual zeros. This allows the phase of the diffracted x-ray wave to be retrieved unambiguously. The method was applied to determine physical dimensions and concentration composition of a Si/Si1−xGex/Si alloy multilayer structure typical for SiGe heterobipolar transistor device. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363793
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  • 8
    Digitale Medien
    Digitale Medien
    Substitutional versus interstitial carbon incorporation during pseudomorphic growth of Si1−yCy on Si(001) (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6711-6715 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Molecular beam epitaxial growth of Si1−yCy alloys pseudomorphically strained on the (2×1) reconstructed Si(001) has been investigated as a function of growth conditions. An important question concerns the relation between substitutional and interstitial carbon incorporation, which has a large impact on electrical and optical properties of these layers. We show that the interstitial-to-substitutional carbon ratio is strongly influenced by the growth conditions, such as growth temperature and Si growth rate. Both reduction in growth temperature and increase of the overall growth rate lead to an increase in the substitutional-to-interstitial carbon ratio. However, these changes in growth conditions can also cause some deterioration in crystal quality. The carbon incorporation behavior is well described by first order kinetics. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363797
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  • 9
    Digitale Medien
    Digitale Medien
    Novel features in the strain profile and gate oxide capacitance of through-gate-oxide implanted structures (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3102-3104 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Oxidized silicon samples were implanted with O, Si, or Ar ions. The samples were characterized by x-ray triple crystal diffractometry and metal-oxide-semiconductor admittance spectroscopy to reveal information on the nature of the ion-induced damage. The experimental results on the strain profile, gate oxide capacitance, etc., exhibited novel features. These interesting results suggest ion-damage-induced precipitation of SiO2 particles in silicon and oxidation of the silicon subsurface by the injection of the recoil O atoms from the gate oxide into the silicon subsurface, both at room temperature. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.120259
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  • 10
    Digitale Medien
    Digitale Medien
    Strain compensation in Si1−xGex by heavy boron doping (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1143-1144 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Strain compensation in SiGe by heavy boron doping was demonstrated. For this purpose, SiGe layers containing up to several percent of boron were deposited using rapid thermal chemical vapor deposition. The strain compensation effect was evaluated by double crystal x-ray diffraction measuring the difference between the diffraction peak distances of the boron doped samples and a reference sample without boron which can be directly related to the decrease of the lattice constant in Si1−x−yGexBy due to the incorporation of boron. The films were characterized by cross-sectional transmission electron microscopy (XTEM), Auger electron spectroscopy (AES), and secondary ion mass spectroscopy (SIMS). © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.114988
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