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  • Electronic Resource  (180)
  • 1995-1999  (102)
  • 1990-1994  (78)
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  • Electronic Resource  (180)
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  • 1
    Electronic Resource
    Electronic Resource
    A precursor route to prepare superconducting Sr2CuO2(CO3)1−x (BO3) x (1996)
    Springer
    Journal of materials science 15 (1996), S. 1186-1188 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00539977
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  • 2
    Electronic Resource
    Electronic Resource
    A Half-Open Cage-Shaped Cluster, (NEt4)3[WOS3(CuBr)3(μ2-Br)]·2H2O: Synthesis, Structure, and Nonlinear Optical Properties (1995)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 8717-8721 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100021a042
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  • 3
    Electronic Resource
    Electronic Resource
    Free-carrier absorption of Hg1−xCdxTe epitaxial films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7738-7742 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Free-carrier absorption (FCA) of Hg1−xCdxTe epitaxial films is analyzed by considering the composition-in-depth nonuniformity of epilayers. The results show that epilayers exhibit different FCA behavior from bulk materials. Based on the analyses, the carrier concentration, the density and size distribution of Te precipitates, as well as the inclusion in Hg1−xCdxTe epilayers are derived from fitting the measured FCA spectra. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362342
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of structure and morphology on resistive loss at 10 GHz of the large-area laser-deposited YBa2Cu3O7 thin films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1165-1170 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three large-area YBa2Cu3O7(YBCO) superconducting thin films have been laser-deposited under almost identical conditions. However, the microwave surface resistance Rs of the films deviated greatly, they are 280 μΩ, 3.78 mΩ, and 97 mΩ, respectively. It was found that the structure and morphology of the films greatly influence the resistive losses at 10 GHz and 77 K of the YBCO thin films. Different loss mechanisms were discussed. For high Rs, the large angle grain boundaries were the dominate defect in the thin films and increased the Rs of the film markedly. For low Rs, it was mainly due to the misaligned "123'' grains in the thin films and the intrinsic loss. For Rs up to the mΩ range, besides the misaligned 123 grains, domain boundaries and nonsuperconducting outgrowths of different sizes appeared and this caused the rise of Rs value. All these results were given experimentally and discussed theoretically. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358981
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  • 5
    Electronic Resource
    Electronic Resource
    Modeling and characterization of interface state parameters and surface recombination velocity at plasma enhanced chemical vapor deposited SiO2–Si interface (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2048-2054 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effective surface recombination velocity (Seff) at plasma enhanced chemical vapor deposited (PECVD) SiO2/Si interface as a function of surface band bending under illumination was obtained by combining the photoconductive voltage decay measurements with indium tin oxide gate bias voltage, metal-oxide-semiconductor-capacitance voltage, measurements and theoretical calculations. The capture cross sections for electrons and holes are obtained for the first time for the PECVD SiO2/Si interface state. Theoretical calculations of Seff based on the interface parameters, including interface state density and cross sections for electron and hole, were performed to see the effects of the positive oxide charge density (Qox) on Seff. It is found that roughly a 10 times larger value of Qox compared to the midgap interface state density is required to reduce Seff below 10 cm/s for 5 Ω cm (100) p-type Si. These results prove the potential of PECVD SiO2 for effective passivation of Si surfaces for devices like solar cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356307
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  • 6
    Electronic Resource
    Electronic Resource
    Specific heat and magnetization of Co2−xSc1+xSn : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4812-4814 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co2ScSn crystallizes with the cubic L21 Heusler structure and is an itinerant ferromagnet with Tc=238 K. X-ray diffraction measurements show that Co2−xSc1+xSn retains the L21 crystal structure with an essentially unchanged lattice constant for 0≤x≤0.15. However, Tc determined from the magnetization measurements decreases monotonically with increasing Sc concentration from 238 K for x=0 to 40 K for x=0.11, and then remains at 40 K from x=0.11 to 0.14. The electronic specific heat coefficient γ is enhanced from 13 mJ/mole-K2 for Co2ScSn (x=0) to 30 mJ/mole-K2 for x=0.13 (Co1.87Sc1.13Sn). In addition, the C/T versus T2 plot shows a leveling-off behavior at low temperatures for the x=0.13 sample. The γ enhancement and level-off behavior observed when a system approaches a magnetic instability are discussed in terms of the self-consistent renormalization theory of spin fluctuations for weak itinerant ferromagnets and nearly magnetic systems. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361616
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  • 7
    Electronic Resource
    Electronic Resource
    Schottky barriers on anodic-sulfide-passivated GaAs and their stability (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3920-3924 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of anodic (NH4)2S passivation of n-GaAs Schottky diodes have been investigated. When these Schottky diodes are prepared on anodically treated n-GaAs in (NH4)2S solution, the Schottky barrier height is lowered by at least 200 meV, and the interface trap density is estimated to be 5.5×1012 cm−2 which is two orders less than that of the untreated sample. It is observed that the Schottky barrier height or the position of the Fermi level at the surface is not stable for samples treated with a small current density (∼83 μA/cm2), but is significantly stable for samples treated with a large current density (∼1 mA/cm2). The stability of passivation is sensitive to the photon energy of the excitation source. Although for a longer-wavelength (λ=514 nm) illumination the passivation is stable, for a shorter-wavelength (λ=325 nm) illumination, the passivation is unstable. The photoluminescence intensity is found to rapidly decay due to photon-assisted oxidation. As compared to the (NH4)2S dip treatment, the anodic (NH4)2S treatment improves the stability of passivation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359910
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  • 8
    Electronic Resource
    Electronic Resource
    Comparison of resonance conditions in double-barrier structures and triple-barrier structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6966-6974 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical analysis has been carried out to compare the resonance condition in the asymmetric double-barrier structure with that in the symmetric triple-barrier one. It is found that the triple-barrier structure may be considered as two quasidouble-barrier structures whose resonance condition may decide the resonance levels in the triple-barrier structure. It is confirmed that two modes exist in the triple-barrier structure: one is normal mode consisting of doublet and the other is degenerated mode of singlet. The critical condition between the two modes is given and its physical meaning is examined. Moreover, it is confirmed that both the normal mode and the degenerated mode exist also in symmetric n-fold barrier structures (n≥3). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361461
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  • 9
    Electronic Resource
    Electronic Resource
    Measurements of intrinsic magnetic properties of materials from surface inspection (abstract) : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5922-5922 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface inspection of magnetic properties with a sensor is a useful and practical technique because it gives a rapid and noninvasive measurement and requires minimum material preparation. However, this technique is handicapped by the practical problems of calculating inherent magnetic properties of the material from such a measurement. A transfer function based on the first approximation was developed previously and it worked well when the dimension of the sample was comparable with the inspection head. However, the nonuniform distribution of the magnetic field is an inherent problem and gets more serious when the vertical and lateral dimensions of the test material become comparable with the pole length of inspection head. Therefore, it invalidates the application of first approximation. A more general and practical transfer function is derived in this paper, including the geometry effects of inspection head and test material. This transfer function is based on the surface magnetic charge model and fits well in the situation when the test material has a large dimension. Test results on specimens by direct measurement and measurement from surface inspection will be presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355513
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  • 10
    Electronic Resource
    Electronic Resource
    Superconductivity and structural transformation in HfV2 and Nb-doped HfV2 : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6405-6407 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the specific heat shows that the strong electron-phonon coupling system HfV2 undergoes a structural transformation at 116 K and becomes superconducting around 9 K. The structural instability can be interpreted in terms of a strong electron-phonon coupling and Fermi surface nesting. The structural transformation shifts to lower temperatures with very dilute Nb substitution in HfV2, and completely disappears with only 5 at. % Nb. The low-temperature specific heat of HfV2 shows a large density of states at the Fermi level. These experimental results are consistent with predictions from band-structure calculations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362013
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