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  • 1
    Electronic Resource
    Electronic Resource
    The role of an electric field applied during pulsed laser deposition of LiNbO3 and LiTaO3 on the film orientation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 7089-7093 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low electric field applied during film deposition has a significant influence on the orientation of ferroelectric thin films prepared by pulsed laser deposition. C-axis oriented growth of LiNbO3 films was demonstrated on fused silica with the aid of a low bias voltage Vb=0–120 V, and complete c-axis orientation was achieved at Vb=110 V. In contrast, the electric field cannot induce c-axis orientation of LiTaO3 films. Theoretical analysis suggests that the electrostatic energy provides an extra driving force for the c-axis oriented growth of the ferroelectric films if the permittivity components satisfy ε33/ε11≤2, as in LiNbO3 film, but not if ε33/ε11〉2 at the deposition temperature, as in LiTaO3 film. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363720
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  • 2
    Electronic Resource
    Electronic Resource
    Phonon mode study of Si nanocrystals using micro-Raman spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6705-6708 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: First-order Raman spectra of hydrogenated nanocrystalline silicon (nc:Si:H) films show unexpected features in their optical vibrational modes for crystallites with sizes ranging from 2 to 6 nm. Two size-dependent spectral regions, one with the stronger intensity peaking at 505–509 cm−1 and another a shoulder-like band between 512 and 517 cm−1, are clearly identified using a detailed line-shape analysis and the strong phonon confinement model. The strong size dependence of the relative integrated intensities of the two bands suggests that the modification of the vibrational spectra can be attributed to an effect induced by the atomic vibrations from the near-surface region of the nanocrystals. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360494
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  • 3
    Electronic Resource
    Electronic Resource
    Optical characterization of GaN films by photoreflectance and photocurrent measurement (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7424-7426 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the room temperature optical characterization of single crystal hexagonal GaN films on (0001) sapphire grown by metalorganic chemical vapor deposition. The energy gap of GaN was determined to be 3.400 eV by photoreflectance and the possible origin of the photoreflectance signal is discussed. Photocurrent measurement exhibited a peak at 3.351 eV and a continued photoresponse through the ultraviolet region. We found that the intensity of photocurrent was dependent upon the chopper frequency in the measurement. Absorption coefficient and film thickness were obtained from the optical transmission spectra. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360400
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetic anisotropy and interlayer exchange coupling in the sputtered Co/Ag multilayers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5549-5553 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The in-plane uniaxial anisotropy and perpendicular anisotropy of sputtered Co/Ag(111) multilayers have been investigated by magnetic measurements and the in-plane ferromagnetic resonance (FMR) technique. The data-fitting analysis for the FMR experimental results about the angular dependence of the resonance field shows that the in-plane anisotropy cannot be fully described by only using the first-order term, and the second-order term must be included. Furthermore, the interface-induced anisotropy has been obtained by FMR. Both ferromagnetic and antiferromagnetic couplings have been revealed by hysteresis loop measurement. Specifically, a spin-flip phase transition has been observed in the sputtered Co/Ag(111) multilayers, which is attributed to the effects of the AF-coupling and in-plane uniaxial anisotropy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359675
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  • 5
    Electronic Resource
    Electronic Resource
    Concurrent variation of giant magnetoresistance and saturation Kerr rotation in NiCo/Cu multilayers (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3371-3373 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependences of magneto-optical effect, effective optical constants, and giant magnetoresistance (GMR) on the thickness of Cu layers were investigated in NiCo/Cu multilayers prepared by rf magnetron sputtering. A peak of saturation polar Kerr rotation θK, occurred simultaneously with that of GMR ratio when the Cu thickness is around 1.0 nm, where a clear drop of the effective optical constants n and k appeared. The peak of θK is mainly caused by the reduction of the effective optical constants, which dominate over the small drop of the effective off-diagonal elements of the dielectric tensor. The concurrent variation of GMR and θK is related to antiferromagnetic interlayer coupling, which may change the electron band structure and thus the optical and magneto-optical transitions of electrons. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121607
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  • 6
    Electronic Resource
    Electronic Resource
    X-ray diffraction study of alternating nanocrystalline silicon/amorphous silicon multilayers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 838-840 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural properties of alternating nanocrystalline silicon/amorphous silicon multilayers with visible light emission at room temperature were examined by means of x-ray diffraction. According to the linewidths and intensities of the diffraction peaks in the low- and high-angle ranges, we have determined the effective interface thickness, the mean crystallite sizes, and the internal strains, which are closely related to the photoluminescence in this material. In addition, the existence of the voids or holes was also observed, indicating that the improved electrical properties of this kind of hydrogenated nanocrystalline materials are due to the inhomogeneous structure of the material. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118219
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  • 7
    Electronic Resource
    Electronic Resource
    Phonon properties and microstructure of annealed LiTaO3:Nd (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2401-2403 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phonon properties and microstructure of annealed Nd-doped LiTaO3 (LT:Nd) were examined by means of Raman scattering and infrared spectra. Raman spectra show the splitting of A1(TO) mode at 204 cm−1 and the appearance of an additional shoulder peak at ∼208 cm−1, indicating that the homogeneous distribution of Nd ions leads to the structural recovery of partial oxygen octahedra centered with Li and Ta ions, but the microstructural deviation from original LT trigonal system still exists. The enhancement of E(TO) mode intensities and the reduction of A1(TO) mode intensities in the A1+E symmetry spectrum are mainly attributed to the microstructural deviation of LT:Nd and the changed photorefractive effect due to annealing. Infrared spectra in the OH stretching region suggest that the changed photorefractive effect arises from the displacements of positive ions along the optical z axis. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118884
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  • 8
    Electronic Resource
    Electronic Resource
    Identification of oxygen vacancies in YBaCuO superconductors by high-resolution electron microscopy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 368-370 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution electron microscopy studies as well as computer simulation studies on oxygen vacancies in Y-Ba-Cu-O superconductors show that the existence of oxygen vacancies at {0, 1/2, 0} sites leads to the distortions of structural images. For certain imaging conditions, the spots corresponding to the column of oxygen vacancies can be distorted heavily, so that the indirect image of oxygen vacancies in Y-Ba-Cu-O superconductors may be acquired. The results reveal that even in local area the oxygen vacancies may be distributed regularly.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101452
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  • 9
    Electronic Resource
    Electronic Resource
    Annealing temperature dependence of Raman scattering in Ge+-implanted SiO2 films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2704-2706 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have examined the Raman spectra of violet and infrared emitting Ge+-implanted SiO2 films with special emphasis upon annealing temperature (AT) dependence of Raman scattering. We found that the complete spectrum mainly consists of three bands at 220–280, 300, and 430 cm−1, corresponding to scattering of Ge-related components, Ge nanocrystallites, and localized Si–Si optical phonons in the Ge neighborhoods, respectively. The Ge crystalline band shows an obvious AT dependence. The theoretical result from the phonon confinement model can predict its linewidth change with AT, but cannot explain its constant peak frequency. Based on the experimental result from x-ray diffraction, we attributed the discrepancy mainly to the compressive stress exerted on Ge nanocrystallites, which leads to the upshift of Ge crystallite peak thereby basically compensating the downshift caused by the confinement on phonon frequency. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366089
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  • 10
    Electronic Resource
    Electronic Resource
    Contrast reversal of antiparallel domains in Cu-doped (Ba0.25Sr0.75)0.9(K0.5Na0.5)0.2Nb2O6 single crystal with synchrotron topography (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2649-2651 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Synchrotron-radiation topographic observations have shown that the Cu-doped (Ba0.25Sr0.75)0.9(K0.5Na0.5)0.2Nb2O6 crystal has a strong ferroelectric x-ray anomalous-scattering effect at the wavelength near the absorption edge of Ba atoms. The reversal of anomalous contrast of antiparallel domains in the crystal was directly revealed in the topographs of hkl and hkl¯ reflections. It was found that the domain walls are all polar and are formed to compensate the charges resulting from the inhomogeneous distributions of the metal atoms in the bulk crystal. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113113
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