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  • 1
    Electronic Resource
    Electronic Resource
    Picosecond infrared pump–probe spectrum of D2O adsorbed at acid OD group of zeolite (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 2460-2466 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Spectroscopic and dynamic features of the vibrationally excited D2O/zeolite system have been investigated by two-color infrared–infrared pump–probe experiment. The frequency- and delay-scanned probe intensities were measured by tuning the pump laser to the OD stretching bands of the D2O molecule hydrogen bonded to the acidic OD group of mordenite zeolite. Two types of pump-induced signals were observed: the ones which have the population lifetime of 43±5 ps and display frequency shift by the pumping frequency, and the others, which have the lifetime of about 15 ps and exhibit no such frequency shift. Possible origins of the signals are discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.476816
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical properties of InAlAs/InGaAs modulation doped structure after SiN passivated annealing (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1311-1314 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of thermal annealing on the InAlAs/InGaAs modulation-doped structure, passivated with a SiN film, was investigated. In contrast to the capless sample, the passivated modulation-doped sample exhibited negligible degradation in the two-dimensional electron gas concentration (NS) after annealing at 280 °C, indicating that SiN is an efficient passivation material to ensure good thermal stability for the InAlAs/InGaAs modulation-doped structure. In addition, partial recovery in NS was found by annealing the SiN-passivated sample that had experienced serious NS degradation. A series of secondary ion mass spectroscopy (SIMS) measurements and Hall effect measurements revealed that the recovery of NS is associated with the discharge of fluorine atoms from the Si-doped n-type InAlAs layer. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363911
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  • 3
    Electronic Resource
    Electronic Resource
    The effect of adsorbed noble gas atoms on vibrational relaxation of hydroxyl group in zeolite (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 279-288 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: By means of tunable infrared pump–probe experiment, vibrational relaxation rates (v=1→0) of OH stretching mode of Brønsted acidic hydroxyl groups in a mordenite zeolite, which were interacting with noble gases (He, Ar, Kr, or Xe), were measured. The population lifetime, T1, decreased with the increase of the interaction with noble gases, e.g., 170 ps and 58 ps for isolated hydroxyl groups and ones interacting with Xe, respectively. Using a simple linear chain model, the mechanism for the enhancement of the relaxation rate was studied. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.471873
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  • 4
    Electronic Resource
    Electronic Resource
    Induction of optical transitions through complexation within Hg–rare gas van der Waals systems (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 5956-5963 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The high repulsive states of HgAr and HgNe van der Waals complexes, correlating with Hg 6s6d atomic states have been investigated by double resonance spectroscopy, through the first excited state A 30+ and B 31 of the complexes. The repulsive potentials have been fitted through numerical Franck–Condon simulations. They have been characterized by perturbative calculation as quasi-pure 6dΣ potentials in Hund's case a. The strong Hg–rare gas electrostatic interaction potential overruns the spin–orbit interaction at distances shorter than 7 A(ring). These observed repulsive states are mostly of Ω=1 character correlating with 3D3 at infinite distances. The contribution from the potential of Ω=0− symmetry correlating with 1D2 is of minor importance. Therefore, the absorption in the repulsive states of the complex arises mostly from proximity induced absorption in an optically forbidden transition 3P1→3D3. A perturbative model accounts well for the bound free absorption intensities experimentally observed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.470475
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  • 5
    Electronic Resource
    Electronic Resource
    Molecular-beam epitaxial growth of InAs/GaAs superlattices on GaAs substrates and its application to a superlattice channel modulation-doped field-effect transistor (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3941-3949 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The molecular-beam epitaxial growth conditions for (InAs)m(GaAs)n short period superlattices (SPSs) on GaAs substrates have been optimized by monitoring reflection high-energy electron diffraction (RHEED) intensity oscillations. The RHEED oscillation measurements enable understanding InAs growth behavior on a 7% lattice-mismatch GaAs substrate. Within one monolayer InAs deposition with lower than 560 °C growth temperature can give high SPS crystalline quality. The SPS periodic structure and the monolayer InAs formation, embedded in GaAs layers, have been confirmed by x-ray diffraction and transmission electron microscopy measurements. The obtained thickness controllability for the SPSs is less than±6% for InAs and ±3% for GaAs. The electron Hall mobilities for modulation-doped structures having an (InAs)1(GaAs)n SPS as an electron channel, whose layer index of n varied from 3 to 6, have been compared with those with a pseudomorphic InGaAs random alloy channel which has the equivalent In composition. The SPS channel samples have shown up to 15% higher electron Hall mobilities than the InGaAs alloy channel samples at 77 K. A 0.2-μm-gate (InAs)1(GaAs)6 superlattice channel modulation-doped field-effect transistor (FET) has exhibited a maximum extrinsic transconductance of as high as 450 mS/mm with a 70-GHz cut-off frequency at room temperature. The best noise figure of 0.58 dB with an associated gain of 11.15 dB has been attained. The obtained device characteristics are comparable or superior to those for the corresponding InGaAs alloy channel FETs. These results demonstrate, for the first time, the (InAs)m(GaAs)n SPS potentialities as an ordered counterpart for InGaAs random alloy for high-speed device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348454
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  • 6
    Electronic Resource
    Electronic Resource
    Fluorine diffusion and accumulation in Si step-doped InAlAs layers (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2459-2461 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quantitative relation between fluorine (F) accumulation and Si donor concentration in n-InAlAs layers on InP substrate was investigated for several kinds of step-doped InAlAs samples using secondary ion mass spectroscopy. From the depth profile of F and Si donors in a periodic i-/n-InAlAs sample, we found that F accumulates only in n-InAlAs layers, passing through i-InAlAs layers. We also found that the amount of F accumulation in an n-InAlAs layer depends on the Si doping concentration. The experimental results can be explained by considering two states of F. In one state, F is bound to a Si donor and immobile, and in the other it is free and can diffuse. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122481
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  • 7
    Electronic Resource
    Electronic Resource
    T-Cell Receptor Diversity Expressed by CD4+ T Cells Activated by Primary Allogeneic HLA-DR Stimulation: Estimation of the Degree of CDR3 Diversity (1996)
    Oxford, U.K. and Cambridge, USA : Blackwell Science Ltd
    Scandinavian journal of immunology 43 (1996), S. 0 
    Details
    ISSN: 1365-3083
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: In order to analyse the diversity of T-cell receptors (TCRs) expressed by the T-cell population activated by allogeneic HLA-DR stimulation, TCRβ cDNA was synthesized from mRNA of human CD4+ T cells that had been stimulated in a primary mixed lymphocyte reaction (MLR). The TCRβ cDNA was amplified by the polymerase chain reaction (PCR), subjected to bacterial cloning, and sequenced from Vβ through Jβ. Twenty-six different Vβ genes and 10 different Jβ segments were detected among 56 randomly selected cDNA clones. Occurrences of Vβ17.1 and Jβ1.5 were higher than those found in the CD4+ T-cell population activated with a CD3-specific antibody. A total of 53 different CDR3 sequences, two of them occurring more than once, were detected among the 56 cDNA clones. In order to estimate the degree of CDR3 diversity, amino acid similarity in the CDR3 region of the cDNA was calculated and compared with those of the anti-CD3-activated T-cell sequences as well as those of various published T-cell clone sequences, each directed to either alloantigens or single antigenic peptides. It was found that the similarity score among CDR3 sequences obtained from the MLR (56.4 ± 10.3) was comparable to those of anti-CD3-activated T cells (55.7 ± 10.7) and those of T-cell clones directed toward alloantigens (range, 48.4 ± 12.4−59.4 ± 13.1), but significantly smaller than those of T-cell clones directed toward single antigenic peptides such as those derived from myelin basic protein (75.6 ± 17.9) and cytochrome c (76.9 ± 20.5). These results provide quantitative proof that TCRs of T cells activated by primary allogeneic HLA-DR stimulation have a larger diversity than those recognizing single antigenic peptides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-3083.1996.d01-67.x
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  • 8
    Electronic Resource
    Electronic Resource
    Measurement of MHD combustion-gas temperatures and potassium number densities in the presence of cold boundary layers
    Amsterdam : Elsevier
    Journal of Quantitative Spectroscopy and Radiative Transfer 26 (1981), S. 147-156 
    Details
    ISSN: 0022-4073
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-4073(81)90074-1
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  • 9
    Electronic Resource
    Electronic Resource
    Reply to the note on the flow behaviour of combustion gas in the boundary layer of an MHD generator
    Amsterdam : Elsevier
    Journal of Quantitative Spectroscopy and Radiative Transfer 29 (1983), S. 277-278 
    Details
    ISSN: 0022-4073
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-4073(83)90045-6
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  • 10
    Electronic Resource
    Electronic Resource
    Spectral emission from MHD combustion gas mixed with pulverized coal
    Amsterdam : Elsevier
    Journal of Quantitative Spectroscopy and Radiative Transfer 33 (1985), S. 281-289 
    Details
    ISSN: 0022-4073
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-4073(85)90158-X
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