Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Electronic Resource  (19)
Source
Material
  • Electronic Resource  (19)
Years
  • 1
    Electronic Resource
    Electronic Resource
    Optical waveguides formed by deuterium passivation of acceptors in Si doped p-type GaAs epilayers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4151-4155 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the use of plasma hydrogenation of Si doped, p-type GaAs crystalline samples to form infrared waveguides through acceptor passivation. Epilayers grown by liquid phase epitaxy were exposed to a deuterium plasma for ninety minutes at three different temperatures. Secondary-ion mass spectrometry (SIMS) analysis indicated that the deuterium concentrations in the crystals after plasma exposure were nearly equal to the acceptor level and extended to depths between 2.0 and 4.0 μm. Reflectivity measurements showed that the epilayers had passivated regions whose thicknesses corresponded to those determined by SIMS analysis. Laser coupling experiments at 1.15 μm showed optical waveguiding in each sample and lowest propagation losses were on the order of 35 dB/cm. At a wavelength of 1.523 μm, only the sample processed at the highest temperature exhibited laser guiding and losses were considerably higher.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350849
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Hydrogenation of InAs on GaAs heterostructures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1461-1466 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic hydrogen has been introduced from a plasma source into InAs layers grown by molecular beam epitaxy on GaAs substrates. It is shown that hydrogen diffuses very fast into this material. The presence of hydrogen modifies the electronic transport properties, the near-band-edge luminescence spectra, and the far-infrared reflectivity spectra. The most striking effect is that, unlike other III-V compounds, the free-carrier density increases by one order of magnitude after hydrogenation. These phenomena are reversible and thermal annealing restores the original properties of the samples. Finally, models are proposed to explain the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349558
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Characterization of hydrogenated GaAs/AlGaAs multiple quantum well structures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8489-8494 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the photoluminescence properties and the hydrogen depth distributions of plasma treated GaAs/AlGaAs multiple quantum well (MQW) structures. Specimens grown by molecular beam epitaxy were exposed to a deuterium plasma under different temperature-time conditions. Photoluminescence measurements were made at 4.2 K, using low and high excitation powers, on the hydrogenated samples and on untreated partners. A decrease in the linewidth of the free exciton and an increase in the peak intensity were observed in specimens following plasma treatment. In general, each of the hydrogenated MQW specimens displayed an increase in luminescence efficiency and a diminution of impurity-related peaks after hydrogenation. Secondary ion mass spectrometry measurements yielded depth distributions for 2H and Al atoms. In samples having the best luminescence, the 2H was nearly constant throughout the MQW region, at about 1018 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353401
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Improved performance of InSe-based photoelectrochemical cells by means of a selective (photo)electrochemical etching (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 141-145 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that the performance of photoelectrochemical cells based on the lamellar material InSe can be considerably improved by means of a selective (photo)electrochemical etching. Whereas the cleavage Van de Waals plane (⊥ to c axis) shows little improvement, the photcurrent in the (parallel) face (parallel to the c axis) is doubled (30 mA cm−2 under AM1 illumination). For n-type InSe a reverse bias (+1.5 V versus standard calomel electrode SCE) was employed during the photoetching, p-InSe electrodes were electrochemically etched by applying a forward bias (+1.5 V). In both cases, surface holes carry out the selective corrosion of the semiconductor surface which is another manifestation for the asymmetry played by holes and electrons on semiconductor surfaces. It is hoped that this finding will pave the way for the construction of high-efficiency solar cells based on a thin film made of lamellar materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335377
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Behavior of hydrogen intentionally introduced by plasma into metalorganic vapor phase epitaxy grown CdTe:As layers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 550-554 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Arsenic doped CdTe layers have been successfully exposed to a hydrogen or deuterium plasma to study the diffusion of these species and their interactions with arsenic. It is shown that hydrogen behaves similarly when unintentionally (during growth) or intentionally (plasma exposure) introduced. Infrared absorption measurements show that in both cases, identical As–H complexes are formed. The IR absorption line of deuterium–arsenic complexes has also been detected. The concentration of active arsenic acceptors decreases after intentional hydrogen or deuterium diffusion, as a consequence of the formation of these As–H or As–D complexes. But, the diffusion profiles of deuterium show that deuterium in the semiconductor binds also to other As-related centers which have not been identified unambiguously. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373694
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Interactions of intentionally diffused hydrogen with nitrogen acceptors and nitrogen related donor centers in molecular beam epitaxy grown ZnSe (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1393-1397 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen doped ZnSe layers grown by molecular beam epitaxy have been exposed to a hydrogen or deuterium plasma. Deuterium diffusion profiles have been measured by secondary ion mass spectroscopy. The main feature of these profiles is the presence of a plateau on which the H concentration closely matches the total N content of the layers. Electrical and photoluminescence studies of the layers, before and after hydrogen plasma exposure, show that both acceptor and donor N-related centers are passivated by hydrogen. These results demonstrate that in ZnSe:N hydrogen passivates the nitrogen acceptors and the related nitrogen donors. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370900
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Transport properties of hydrogenated p-GaInAs doped with carbon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2300-2304 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly carbon-doped Ga0.47In0.53As layers grown by chemical beam epitaxy have been exposed to a deuterium plasma. Deuterium diffusion profiles reflect very strong C–D interactions. Concerning electronic transport properties, from p-type when as-grown, these GaInAs samples turn to n-type after plasma exposure. Annealings of deuterated layers have also been performed. They show that temperatures as high as 450 °C must be reached before p-type conductivity is fully restored in the material. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363060
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Interactions between hydrogen and group VI donors in GaAs and GaAlAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3186-3193 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs and GaAlAs layers doped with different group VI donors (S, Se, Te) have been exposed to hydrogen plasma. By secondary ion mass spectroscopy, it is shown that, as in Si-doped materials, the hydrogen diffusion strongly depends on the AlAs content. Electronic transport measurements indicate that after hydrogen diffusion the electron concentration systematically decreases and their mobility increases, demonstrating clearly the passivation of the group VI donors by hydrogen. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359566
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Hydrogen neutralization of acceptors in highly doped GaInAs:Zn (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2791-2793 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the behavior of atomic hydrogen (or deuterium) introduced by plasma in highly doped GaInAs:Zn epitaxial layers. Different experimental techniques have been used: secondary-ion mass spectrometry (SIMS) profiling, electronic transport measurements, and infrared absorption spectroscopy. After hydrogenation the concentration of free holes is drastically reduced. SIMS profiles follow erfc functions. This corresponds to weak hydrogen-dopant interactions. This weakness is confirmed by the annealing experiments from which a low dissociation energy can be estimated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103789
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Spectroscopic evidence of the formation of N–H and N–D complexes in plasma hydrogenated and deuterated ZnTe:N layers (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 28-30 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxially grown nitrogen-doped ZnTe layers have been exposed to a hydrogen (deuterium) plasma. After hydrogen (deuterium) diffusion, an infrared absorption band appears at 3346 cm−1 (2489 cm−1). It is assigned to the vibrational stretching mode of the N–H (N–D) bond. It is also shown that the absence of such detectable bands in heteroepitaxially grown ZnTe/CdZnTe layers can be explained by thermal strains originating from the difference between the ZnTe and the CdZnTe thermal expansion coefficients. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121712
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...