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  • 1985-1989  (2)
  • 1987  (2)
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  • 1985-1989  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3331-3333 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GdTbCo films were rf diode sputtered from a composite target varying the argon pressure PAr and the substrate bias voltage Vb. Both the uniaxial magnetic anisotropy constant Ku and the aging behavior of the films depend strongly on the preparation parameters. The absolute maximum of Ku was obtained at Vb=−150 V. However, at this bias voltage nearly the highest oxidation rate of unprotected 100-nm-thick films was observed. Films of highest stability are obtained without any bias voltage. The oxidation rate is correlated with the Ar concentration in the films. It was argued recently that the anisotropy of sputtered films could depend on argon incorporation. Our results seem to rule out this mechanism since GdTbCo films prepared at zero bias show a relative Ku maximum in dependence on PAr where the argon concentration is near its absolute minimum. The magneto-optic Kerr rotation θK of the films can only be correlated with the Co concentration for zero bias films. Some additional variation depending on the bias voltage has been observed.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3343-3345 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous GdTbFe thin films were produced by dc magnetron sputtering in argon atmosphere at varying partial pressures of nitrogen, oxygen, and water. The compensation temperature Tcomp, the Curie temperature TC, and the uniaxial magnetic anisotropy constant Ku decrease strongly with increasing impurity concentration in the films. The influence of nitrogen on Tcomp and Ku is about a factor of 3 less than that of oxygen and water. The strong decrease of Tcomp and Ku is due to the preferred reaction of the impurities with the rare-earth (RE) atoms. This leads to a preferred deactivation of the latter resulting in a decrease of the rare-earth (RE) sublattice magnetization. Moreover, the uniaxial magnetic anisotropy is primarily based on the single ion anisotropy of the Tb atoms. If these are deactivated Ku decreases. At increasing impurity concentrations the selectivity of deactivation decreases and increasing amounts of Fe are affected. Thus, the steepest decrease of Tcomp and Ku is observed at low concentrations. For Tcomp the mean values of the slopes at concentrations below 1 at. % are 35 K per at. % for nitrogen, 85 K per at. % oxygen (Ar/oxygen atmosphere), or 125 K per at. % oxygen (Ar/water atmosphere). Ku is reduced to half its original value at concentrations of 4 at. % nitrogen, 1.2 at. % oxygen (Ar/O2), and 0.9 at. % oxygen (Ar/H2O) in the films. The Curie temperature TC decreases at a rate of about 10 K per at. % impurity. This is due to the diminishing magnetic interactions at increasing impurity incorporation.
    Type of Medium: Electronic Resource
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