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  • 1990-1994  (13)
  • 1992  (13)
  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2810-2816 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: First phase formation has been determined in Cu binary thin film systems with Ti, Zr, Mg, Sb, Pd, and Pt using transmission electron microscopy and Rutherford backscattering spectrometry. CuTi, CuZr, CuMg2, Cu2Sb, Cu3Pd, and Cu3Pt are the first phases to form upon annealing the Cu/metal bilayers. The effective heat of formation model is used to predict first phase formation in 14 Cu/metal systems.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1768-1773 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Solid phase epitaxy of 3500-A(ring)-thick GexSi1−x (0.04≤x≤0.12) films on (100) Si substrates has been investigated. The thickness of regrown layers increased linearly with annealing time in the temperature range of 475–575 °C. The regrowth rates of stressed alloys were less than those of pure Si, while stress-relaxed alloys have larger rates than Si. The difference in regrowth rates was explained by the activation-strain tensor model (Aziz, Sabin, and Lu, to be published in Phys. Rev. B). The first element of the activation-strain tensor obtained in this experiment was in excellent agreement with that deduced by Aziz et al. For low Ge concentrations (x〈0.08), the recrystallized region was of good crystalline quality. However, threading dislocations were observed in a stressed Ge0.1Si0.9 alloy after complete recrystallization. During the regrowth at 550 °C, the Ge-Si alloy first regrew coherently up to 300 A(ring), above which threading dislocations started to nucleate. On the other hand, no dislocations were detected in the regrown layer of a stress-relaxed Ge0.1Si0.9 alloy sample.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2356-2362 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A systematic study has been carried out in order to elucidate the mechanisms for low critical current densities in superconducting oxide films prepared by metalorganic deposition. Bi2Sr2CaCu2O8 films grown on MgO(001) have stoichiometric composition and exhibit limited interfacial reaction with the underlying substrates. The films have a low content of carbon and the grain boundaries are mostly clean. Rocking curve analysis shows a narrow peak, while pole figure measurements indicate a strong mosaic pattern. The films exhibit a low critical current density and the magnetic susceptibility versus temperature has a high field dependence. A substantial increase in critical current densities can be achieved when the orientations of Bi2Sr2CaCu2O8 crystallites in the a-b plane are improved.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2983-2985 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A TiN-encapsulated copper structure was made by annealing a Cu-10 at. %Ti alloy film evaporated on a SiO2/Si(100) substrate at 550 °C in a NH3 ambient. A fast heating rate (70 °C/min) to 550 °C can effectively suppress the formation of Cu3Ti and enhance the TiNx formation near the surface of the copper film. Oxygen incorporation in the TiNx layer was found by Auger depth profiling measurement. This self-encapsulated Cu structure exhibits good adhesion to SiO2 and oxidation resistance.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2243-2245 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Solid phase epitaxial regrowth of Sb implanted strained Si1−xGex alloy layers is reported. A set of Si0.92Ge0.08 alloys, MBE grown on (100)Si substrates, were implanted at room temperature with Sb+ ions at an energy of 200 keV and a dose of 1015 ions/cm2. These alloys were annealed in a RTA system at temperatures of 525, 550, and 575 °C for durations between 30 s and 10 min. Backscattering (channeling) measurements show an increase in the regrowth rate compared to furnace annealed Sb implanted (100)Si. Hall effect measurements show an increase in the carrier concentration as the amorphous/crystalline interface propagates to the surface. The concentration reaches a maximal value which exceeds the maximum solid solubility of Sb in Si at the annealing temperature by a factor of six. There is a reverse annealing tendency for longer annealing times.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2902-2904 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Electrical properties of Sb implanted strained Si1−xGex alloy layers are reported. Two sets of Si1−xGex epilayers with compositions of x=0.08 and 0.18, MBE grown on (100)Si substrates, were implanted at room temperature with Sb+ ions at energies of 200 and 100 keV, respectively, and doses of 1013 and 1015 cm−2. Secondary-ion mass spectrometry and spreading resistance profiling measurements show that Sb implantation, with a dose below the critical value for amorphization (1013 cm−2), formed a p-type region upon annealing at 500 °C. Only higher temperature anneals transformed the implanted layer into the expected n-type doping. Maximal values of electrical activity (45±10%) and mobility were obtained in this case only at temperatures around 800–900 °C. For the high dose implantation (1015 cm−2), it was found that the highest activation efficiency at the implantation profile peak was obtained at 500–600 °C, while at the end-of-range region the activation efficiency was very low.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    Springer
    Bulletin of environmental contamination and toxicology 48 (1992), S. 651-655 
    ISSN: 1432-0800
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Energietechnik , Medizin
    Materialart: Digitale Medien
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  • 8
    ISSN: 1432-0584
    Schlagwort(e): Type-IIa hypercholesteremia ; Lovastatin ; Platelet function ; Fibrinogen ; Clotting inhibitors ; Fibrinolytic activity
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Medizin
    Notizen: Summary In a study of 20 patients with hypercholesterolemia (type IIa) the effects of lovastatin (20–80 mg/ day) on various clotting and thrombosis parameters were monitored for 12 months. On 11 occasions various cholesterol fractions and clotting parameters were determined in each patient. In additon, the clotting inhibitors AT III, protein C, protein S, and C1-esterase inhibitor and the fibrinolysis parameters plasminogen and α2-antiplasmin were examined. Platelet function was monitored on the basis of spontaneous and induced (collagen, ADP, epinephrine, ristocetin) aggregation. Lovastatin in the above dosage brought about a 66 mg/dl (from 320 ± 12.6 to 254 ± 12.0 mg/dl) reduction in the total cholesterol level and a 56 mg/dl (from 244 ± 11.4 to 188 ± 12.1 mg/dl) reduction in LDL cholesterol at the end of the study. Fibrinogen showed a significance decrease during the study period, whereas PT and aPTT remained unaffected. The initial slopes of the ADP-induced platelet aggregation revealed a significant decrease. C-reactive protein and platelet count remained within the normal range, indicating no significant change. Thrombin clotting time, AT III, Cl-esterase inhibitor, plasminogen, and α2-antiplasmin were not modified. Protein C and S behaved in a contradictory way, but remained within the normal range. Long-term treatment with lovastatin was associated with a significant reduction of fibrinogen levels and platelet aggregation induced by ADP in type-IIa hypercholesterolemic patients. These alterations, as well as their role in cardiovascular disease, should be the subject of further investigations.
    Materialart: Digitale Medien
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  • 9
    ISSN: 1432-0630
    Schlagwort(e): 81.40 ; 61.70 ; 61.80
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Extended lattice damage created by implantation of 3.6 MeV Au2+ ions has been investigated using transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). Systematic observations of damage for Au2+ ions implanted with varying doses into silicon are explained in terms of a model. The origin of two distinct bands of extended defects is explained in terms of annealing of the central region of implant-damage, during the course of the implantation. Two distinct bands of Au precipitates are observed in high-dose implanted samples. This observation is explained as being the result, in part, of segregation of gold in front of a recrystallizing front, and in part, of gettering of dopant-atoms to nodes in a dislocation network. The network arises as a result of dynamic annealing of damaged crystalline silicon.
    Materialart: Digitale Medien
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  • 10
    ISSN: 1432-0630
    Schlagwort(e): 61.10 ; 61.70 ; 68.55
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The structure of Si implanted with high doses of yttrium has been investigated by varying implantation doses and energies. As implantation doses increase into the low 1017 cm−2 range, silicide precipitates form. The precipitates are thin and long and lie parallel to {111} planes in the Si matrix. As dopant concentrations increase, the precipitates themselves become more equiaxed, aspect ratios decrease, and precipitates densities increase until the precipitates coalesce to form a continuous buried layer of yttrium silicide within the Si matrix. The layer thickness is relatively uneven. As implant doses increase to ∼ 4×1017 cm−2, the layer thicknesses become more uniform although there are still defects present. As the implant doses increase further, the precipitate bands on either side of the continuous layer decrease due to gettering of yttrium to the layer. As the energy of the implant is increased, the appearance of the sample is similar to that of the lower energy implants except that the layer is buried deeper in the Si matrix. Observations of the silicide are consistent with its having the AlB2 structure with ordered vacancies on the Si sublattice.
    Materialart: Digitale Medien
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