Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Protection effects of procaine on oxidative stress and toxicities of renal cortical slices from rats caused by cisplatin in vitro (1992)
    Springer
    Archives of toxicology 66 (1992), S. 354-358 
    Details
    ISSN: 1432-0738
    Keywords: Cisplatin ; Rat renal cortical slices ; Oxidative stress ; Cytotoxicity ; Procaine
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Incubation of rat renal cortical slices with 2 mM cisplatin (CDDP) at 37
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01973631
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    A boundary integral equation approach for the calculation of gradients and higher order derivatives in solid mechanics problems (1992)
    Springer
    Computational mechanics 10 (1992), S. 1-21 
    Details
    ISSN: 1432-0924
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract An asymptotically convergent boundary integral technique is presented for the analytical calculation of the gradients in the solid mechanics problems. Upon introducing the perturbed trial function for the boundary unknowns into the differentiated integral equations, it is proved that the former intractable hyper-singular integral equations turn out to become asymptotically convergent. The current approach is able not only to calculate the gradients at the point close to or just at the boundary, but also to obtain the higher order derivatives conveniently. Compared with other suggested techniques, the current one has the advantages of efficiency and generality. The demonstrative numerical examples show that the results have very good accuracy compared with the close form solution. Besides, the problem of properly selection of the shape functions to represent the deflection along the free or symmetric side in the Kirchhoff plate bending problems is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00370016
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    A new integral equation formulation for the analysis of crack-inclusion interactions (1992)
    Springer
    Computational mechanics 10 (1992), S. 217-229 
    Details
    ISSN: 1432-0924
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A new integral equation method for the analysis of the interactions between cracks and elastic inclusions embedded in a two-dimensional, linearly elastic, isotropic infinite medium subjected to in-plane force is presented. By distributing dislocations along the crack lines and forces along the matrix-inclusion interfaces, a set of coupled integral equations is obtained. The discretization procedure of the integrals involved is discussed and the relations between the stress intensity factors and the values of the dislocation functions at the respective crack tips are derived. Several sample problems are presented in order to determine the versatility and the accuracy of this approach.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00370090
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Learning two-tiered descriptions of flexible concepts: The POSEIDON system (1992)
    Springer
    Machine learning 8 (1992), S. 5-43 
    Details
    ISSN: 0885-6125
    Keywords: Concept learning ; learning imprecise concepts ; inductive learning ; learning flexible concepts ; two-tiered concept representation ; flexible matching
    Source: Springer Online Journal Archives 1860-2000
    Topics: Computer Science
    Notes: Abstract This paper describes a method for learningflexible concepts, by which are meant concepts that lack precise definition and are context-dependent. To describe such concepts, the method employs atwo-tiered representation, in which the first tier captures explicitly basic concept properties, and the second tier characterizes allowable concept's modifications and context dependency. In the proposed method, the first tier, calledBase Concept Representation (BCR), is created in two phases. In phase 1, the AQ-15 rule learning program is applied to induce a complete and consistent concept description from supplied examples. In phase 2, this description is optimized according to a domain-dependent quality criterion. The second tier, called theinferential concept interpretation (ICI), consists of a procedure forflexible matching, and a set of inference rules. The proposed method has been implemented in the POSEIDON system, and experimentally tested on two real-world problems: learning the concept of an acceptable union contract, and learning voting patterns of Republicans and Democrats in the U.S. Congress. For comparison, a few other learning methods were also applied to the same problems. These methods included simple variants of exemplar-based learning, and an ID-3-type decision tree learning, implemented in the ASSISTANT program. In the experiments, POSEIDON generated concept descriptions that were both, more accurate and also substantially simpler than those produced by the other methods.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00994004
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Learning Two-Tiered Descriptions of Flexible Concepts: The POSEIDON System (1992)
    Springer
    Machine learning 8 (1992), S. 5-43 
    Details
    ISSN: 0885-6125
    Keywords: Concept learning ; learning imprecise concepts ; inductive learning ; learning flexible concepts ; two-tiered concept representation ; flexible matching
    Source: Springer Online Journal Archives 1860-2000
    Topics: Computer Science
    Notes: Abstract This paper describes a method for learning flexible concepts, by which are meant concepts that lack precise definition and are context-dependent. To describe such concepts, the method employs a two-tiered representation, in which the first tier captures explicitly basic concept properties, and the second tier characterizes allowable concept's modifications and context dependency. In the proposed method, the first tier, called Base Concept Representation (BCR), is created in two phases. In phase 1, the AQ-15 rule learning program is applied to induce a complete and consistent concept description from supplied examples. In phase 2, this description is optimized according to a domain-dependent quality criterion. The second tier, called the inferential concept interpretation (ICI), consists of a procedure for flexible matching, and a set of inference rules. The proposed method has been implemented in the POSEIDON system, and experimentally tested on two real-world problems: learning the concept of an acceptable union contract, and learning voting patterns of Republicans and Democrats in the U.S. Congress. For comparison, a few other learning methods were also applied to the same problems. These methods included simple variants of exemplar-based learning, and an ID-3-type decision tree learning, implemented in the ASSISTANT program. In the experiments, POSEIDON generated concept descriptions that were both, more accurate and also substantially simpler than those produced by the other methods.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1022682318197
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    A comparative study of the electron trapping and thermal detrapping in SiO2 prepared by plasma and thermal oxidation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1429-1435 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Preparation of silicon dioxide (SiO2) thin films by plasma anodization is a promising low temperature (≤600 °C) silicon oxidation technique. This paper investigates the electron trapping and thermal detrapping properties of the plasma grown oxide and compares them with those of the conventional thermal oxide. The avalanche electron injection measurement shows that the electron trapping in the plasma oxide is more severe. The two electron capture cross sections detected in the plasma oxide are of the order of 10−15 and 10−17 cm2, respectively. The former is absent in the thermal oxide and is a feature of oxides prepared at low temperature. The latter is also found in thermal oxide, but its chemical nature is different. Both of them are located near SiO2/silicon interface, indicating that they are related to the intermediate layer. The electron detrapping process in the plasma oxide is different from that in the thermal oxide and has a linear dependence on the logarithmic time. The detrapping is thermally activated with an activation energy of 0.63–0.75 eV. The above traps in plasma oxide can be removed by a high temperature (e.g., 960 °C) post-oxidation annealing (POA) in an inert ambient. After such a POA, the electron trapping in plasma oxide is similar to that in thermal oxides. Some speculation on the trap formation processes is included.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351703
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Effects of confinement on the glass transition temperature of molecular liquids (1992)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 96 (1992), S. 3478-3480 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100187a056
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Study of dynamics of diffusion and cluster formation of copper deposition on polyimide by optical second-harmonic generation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2655-2662 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that optical second-harmonic generation (SHG) can be successfully used for in situ study of metal/polymer interfaces. With this SHG technique, Cu cluster formation on polyimide by surface diffusion and Cu diffusion into polyimide have been investigated. The diffusion coefficients of Cu clusters into polyimide at various temperatures have been determined from the measured decay of SHG signal with time. The effects of temperature, cluster size, and surface modification on diffusion have also been examined. For T 〈 Tg, the surface diffusion of Cu on polyimide to form clusters dominates over the diffusion into the bulk. The latter process becomes competitive with increasing temperature. When T (approximately-greater-than) Tg, few large-size Cu clusters can be formed on the polyimide surface. Cu diffusion into polyimide bulk can be greatly impeded by either a monolayer of Ti or by Cu clusters implanted in polyimide beforehand. In this case, Cu can wet the modified surface and form an interface between Cu and polyimide with good adhesion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351037
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Electron trap generation in thermally grown SiO2 under Fowler–Nordheim stress (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 725-734 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron trap generation in thermally grown silicon dioxide (SiO2) during Fowler–Nordheim (FN) stress is investigated by using an aluminium-gated capacitor structure. The generated electron traps are characterized by the avalanche electron injection technique. The experimental results support the model that electron trapping in oxide follows the first-order kinetics and may have multiple-capture cross sections. It is found that both donorlike (positive charge related) and acceptorlike (neutral before capturing electron) traps are generated and they behave differently. The donorlike trap is not stable at or above room temperature and its effective density saturates as the stressing time increases, while the opposite is true for the acceptorlike trap. The electron-capture cross section of donorlike trap spreads from 10−18 to over 10−14 cm2, but the capture cross section of the generated acceptorlike trap is limited in the range of (4.5–9)× 10−17 cm2. The acceptorlike trap is generated by the interaction between free holes and SiO2 and hole trapping leads to donorlike traps. The relation between the generated trap and the as-grown trap will be discussed. Comparison of the electron traps generated by FN stress with those by irradiation and hot hole injection indicates that the electron trap generation under these different stressing conditions is controlled by the same mechanism. The necessary condition for electron trap generation is the presence of holes in the oxide, rather than a high electrical field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351334
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    A reflection high-energy electron diffraction study of the Si(111) surface during gas source molecular beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5168-5172 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reflection high-energy electron diffraction was used to monitor Si(111) growth during gas source molecular beam epitaxy using disilane (Si2H6). Depending on the substrate temperature, the growing Si(111) surface was found to exhibit hydrogenated δ(7×7), (1×1), (5×5), and (7×7) reconstructions. Within the substrate temperature range of 490 to 560 °C where growth proceeded two-dimensionally, clear and well-defined intensity oscillations could be observed in the [21¯0] azimuths. Since consecutive atomic layers on the Si(111) surface are nonequivalent, the oscillation periods were found to correspond to bilayer growth. In the two-dimensional (2D) growth regime, the oscillation frequencies, and hence the growth rates deduced, were found to increase with increasing substrate temperature and flow rate of Si2H6. At higher temperatures, there was a change from 2D layer-by-layer growth to step propagation and consequently, the intensity oscillations were weak or absent. At low temperatures (〈400 °C) where no dissociative adsorption of Si2H6 occurred, intensity oscillations were not observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350572
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...