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  • 1
    Electronic Resource
    Electronic Resource
    Postgrowth annealing effects of TiO2 thin films grown on InP substrate at low-temperature by metal-organic chemical-vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4459-4461 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and electrical properties of titanium dioxide (TiO2) thin films grown on n-type InP(100) substrate by low-pressure metal-organic chemical-vapor deposition have been studied with postannealing. The thin films of TiO2 were deposited at a low temperature of 350 °C using titanium isopropoxide and oxygen. After a postgrowth annealing by the rapid thermal annealing method at a temperature of 850 °C for 15 s, the TiO2/InP structure of only the anatase phase with (101) and (200) peaks was observed by x-ray diffraction analysis. No interface reaction between TiO2 and InP was detected by Auger electron spectroscopy depth profiling. From capacitance–voltage measurement of the Al/TiO2/n-InP structure, the interface density of states at midgap energy and the dielectric constant were approximately low 1012 eV−1 cm−2 at midgap energy and about 50, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361757
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetic properties of epitaxial and polycrystalline Fe/Si multilayers : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4772-4774 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe/Si multilayers with antiferromagnetic interlayer coupling have been grown via ion-beam sputtering on both glass and single-crystal substrates. High-angle x-ray diffraction measurements show that both sets of films have narrow Fe peaks, implying a large crystallite size and crystalline iron silicide spacer layers. Low-angle x-ray diffraction measurements show that films grown on glass have rougher interfaces than those grown on single-crystal substrates. The multilayers grown on glass have a larger remanent magnetization than the multilayers grown on single-crystal substrates. The observation of magnetocrystalline anisotropy in hysteresis loops and (hkl) peaks in x-ray diffraction demonstrates that the films grown on MgO and Ge are epitaxial. The smaller remanent magnetization in Fe/Si multilayers with better layering suggests that the remanence is not an intrinsic property. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361926
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  • 3
    Electronic Resource
    Electronic Resource
    Thermal evolution of carbon in annealed Co/C soft x-ray multilayers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1428-1436 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structures of the carbon sublayers in the annealed Co/C soft x-ray multilayers fabricated using a dual-facing-target sputtering system have been characterized by x-ray diffraction (XRD), transmission electron microscopy (TEM), and Raman spectroscopy (RS). The results suggest that the structural variations in the carbon layers can be roughly divided into three stages, i.e. ordering, crystalline and grain growth stages. In the ordering stage with annealing temperatures below 400 °C, the upward shift of D and G lines in Raman spectra indicates that the amorphous carbon layers are changing from ones with bond-angle disorder and fourfold-bonding only to ones containing threefold-bonding. In the crystalline stage, the amorphous carbon layers in the as-deposited multilayers crystallize to graphite crystallites in the annealing temperature range of 500–600 °C. The rapid increase in the intensity ratio of D line to G line and dramatic decrease in linewidth further confirm this substantial structural change. In the grain growth stage, the specimens are annealed at temperatures higher than 700 °C. The decrease in the intensity ratio implies a growth in the graphite crystallite dimensions, which is consistent with the XRD and TEM results. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363010
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  • 4
    Electronic Resource
    Electronic Resource
    Hyperpolarizabilities of the m-substituent phenyl amine based chromophores determined from the hyper-Rayleigh scattering and two photon absorption induced fluorescence (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5996-6001 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The technique of hyper-Rayleigh scattering is used to determine and compare the first hyperpolarizabilities (β) of five structurally similar m-substituent phenyl-amine based chromophores using both internal and external standards. Contribution from the two photon absorption induced fluorescence to the observed signal is carefully removed. The chromophores with the m-substituted phenyl ring, that stabilizes the maximal charge-transfer state through resonance effect, are found to have larger static β values and redshifted electronic absorption peaks (λmax) compared with the para-nitroaniline (pNA) chromophore. The electron-withdrawing m-substituent of the chromophore is found to have the effect of reducing both the β and λmax values. Its effect on β is less pronounced when the π-electron reservoir is large. The enhancement of β value and the redshift λmax are observed to be consistent with the extent of the π electron delocalization. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363597
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  • 5
    Electronic Resource
    Electronic Resource
    Dispersion and dipolar orientational effects on the linear electroabsorption and electro-optic responses in a model guest/host nonlinear optical system (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6602-6609 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Linear electroabsorption (LEA) and linear electro-optic (LEO) measurements are demonstrated using a model guest/host system consisting of disperse red 1 (DR1) doped in poly(methyl)methacrylate (PMMA). The LEA response is measured over a wavelength range of 300–700 nm. Electro-optic measurements of the real and imaginary parts of the electric field-induced Pockels coefficient are carried out at wavelengths near and far from the resonant absorption. A shift in the absorption maximum and change in the band shape of the LEA spectrum are related to the linear Stark effect and dipolar orientation. Expressions for the real and imaginary parts of the Pockels coefficient derived from the two experiments are provided. Induced dipolar order as a result of the contact poling process is investigated by the LEA measurement. Information concerning the relaxation of the induced dipolar order, investigated by the LEA measurement, is compared to the relaxation results obtained by using the second-harmonic generation technique. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363783
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  • 6
    Electronic Resource
    Electronic Resource
    Quadratic electro-absorption and electro-optic effects in a guest/host nonlinear optical polymeric system (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1267-1274 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quadratic electro-absorption (QEA) and quadratic electro-optic measurements were performed with a guest/host system consisting of 4(4'-N,N-Dimethylaminophenyl)-1,1-bis(trifluoromethyl sulfonyl)-1,3-butadiene doped in poly(ethyl)methacrylate host polymer. The imaginary part of the QEA response was measured over a wavelength range of 450–600 nm. The real and imaginary parts of the electric field induced optical Kerr coefficient were measured at wavelengths near and far from resonance. Under different polarizations of the optical field in the QEA measurement, the two contributing coefficients of the third order susceptibility (χ(3)) were deduced. A distinctive temperature variation of the third order response was observed. Temperature dependence measurements from ambient to well above the glass transition of the guest-host system were carried out. The same chromophore in a different polymer host, poly(vinyl)chloride, was also investigated. Correct expressions for the real and imaginary parts of the Kerr coefficient are provided. The present results confirm the importance of the electronic contribution to χ(3) at room temperature where molecular reorientation is insignificant. At high temperatures (above the glass transition temperature of the polymer) the ratio of χ(3)3333/χ(3)1133 deviates from −2, which is predicted by the elastic model assuming molecular reorientation to be the dominant mechanism. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361021
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  • 7
    Electronic Resource
    Electronic Resource
    Evolution of silicon surface morphology during H2 annealing in a rapid thermal chemical vapor deposition system (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 108-110 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface morphology of Cz Si(100) after H2 bake has been investigated. It is found that at temperatures as low as 950 °C, and bake times as short as 25 s, steps and terraces are formed by the H2 annealing. The evolution of the step and terrace structure can be clearly seen by virtue of temperature differences across the wafer. The steps are two-atomic layer steps at straight edges, whereas one-atomic layer steps occur when the edge line is irregular. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116771
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  • 8
    Electronic Resource
    Electronic Resource
    Scanned-probe lateral-force determination of fluid-dynamic effects near a solid surface in air (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 130-132 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A calibrated method for the experimental determination of dynamic lateral force using a scanned probe in air has been applied to the measurement of force vs distance as the probe tip approaches a solid surface. The probe is a fused silica fiber vibrated with its axis perpendicular to the surface in a configuration commonly used for distance regulation in near-field scanned optical microscopes. Quantitative agreement of a fluid-dynamic model with the approach data demonstrates that the effects of fluids between the probe and the surface dominate the force on the probe in the optical far field. A two-layer fluid model indicates that fluid-dynamic effects must also be considered in lateral-force determination in the optical near field. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118098
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  • 9
    Electronic Resource
    Electronic Resource
    n-AlGaSb and GaSb/AlGaSb double-heterostructure lasers grown by organometallic vapor phase epitaxy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 400-402 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: n-type doping of AlxGa1−xSb epilayers (0≤x≤1) grown by organometallic vapor phase epitaxy has been achieved by using tritertiarybutylaluminum, triethylgallium, and trimethylantimony as the organometallic precursors and diethyltellurium as the doping source. Electron concentrations exceed 1017 cm−3 for layers with x〈0.3, and decrease to ∼1016 cm−3 for x=1 as a result of higher residual acceptor concentration. Lattice-mismatched double-heterostructure diode lasers with AlGaSb cladding layers and GaSb active layer are demonstrated, and indicate the potential of OMVPE for growth of GaSb-based materials for electronic and optoelectronic devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116698
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  • 10
    Electronic Resource
    Electronic Resource
    Poling dynamics and investigation into the behavior of trapped charge in poled polymer films for nonlinear optical applications (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 6834-6842 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The behavior of surface and trapped charge that originate during contact electric-field poling of a model guest–host nonlinearly active polymer has been investigated. Charge effects in thin films of para-nitroaniline doped polymethylmethacrylate were studied during and after the poling process by simultaneous measurement of the current through the poling circuit and the second harmonic generation (SHG) signal from the polymer system. The poling current present in a fresh sample was found to differ in both magnitude and temporal dependence to that observed in the sample during subsequent polings. The magnitude of the steady-state current eventually reached during the poling process was found to depend on temperature and is related to the mobility of charge. A sharp drop-off in SHG signal intensity that occurred when the poling electrodes were grounded is shown to result from the removal of surface charge that orients chromophore dipoles near the surface of the film; the decay in the macroscopic polarization that then occurs is prolonged by charges trapped in the polymer matrix. The build-up of trapped charge explains a memory effect in which the SHG signal relaxation time gradually increased as the film was subjected to multiple polings until a steady-state value was reached. Finally, it is demonstrated that the charges trapped in the polymer matrix are released only after the polymer is heated to high above its temperature of glass transition and the SHG signal has completely decayed away. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.471350
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