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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 566-568 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A dual-gate-controlled single-electron transistor with coupled dot geometry has been fabricated on a silicon-on-insulator structure. Coupled dots are defined by tunable gates which are designed to separately control the tunneling potential barriers to compensate for disorder due to size fluctuation in quantum dots. The Coulomb-blockade phenomena observed in linear and nonlinear transport regimes were found to be enhanced by the multidot coupling. The Coulomb staircase (nonlinear effect) appears more clearly with the increasing number of coupled dots, indicating definite suppression of the inevitable cotunneling process. In the linear regime, the frequency of Coulomb oscillation was able to be tuned by changing the interdot coupling strength. These results indicate that enhancement of the Coulomb blockade and tunability can be achieved through replacing the traditional single dot by gate-controlled multidots in future single-electron devices. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1432-1238
    Keywords: Key words Spontaneous variability ; Mechanical ventilation ; Arterial oxygenation ; Positive end-expiratory pressure ; Inverse ratio ventilation ; Venous admixture
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Objective: To assess the magnitude of spontaneous variability of arterial oxygenation and oxygen tension-based indices over time in medical intensive care unit (ICU) patients and to study whether high positive end-expiratory pressure (PEEP) or inverse inspiratory-to-expiratory (I:E) ratio ventilation (IRV) results in a greater variability than low PEEP with conventiona l I:E ratio ventilation. Design: Prospective study. Setting: Medical ICU in a tertiary medical center. Participants: 23 patients requiring a pulmonary artery floating catheter for hemodynamic monitoring. Intervention: After being completely sedated, patients were randomized to receive pressure-control ventilation at setting A: high PEEP (15 cmH2O) with conventional I:E ratio (1:2) and setting B: inverse I:E ratio (2:1) with low PEEP (5 cmH2O) alternately, and then at setting C: low PEEP (5 cmH2O) with conventional I:E ratio (1:2). Each ventilation setting lasted 1 h. Measurements and results: The arterial and mixed venous blood samples were measured simultaneously at baseline (time 0), and at 15, 30, 45, and 60 min thereafter. The coefficient of variation (CV) of arterial oxygen tension (PaO2) over time was 5.9 % for setting A, 7.2 % for setting B, and 6.9 % for setting C. ANOVA showed no significant differences in CVs of PaO2 between the three settings. Oxygen tension-based indices, alveolar-arterial oxygen difference (A-aDO2) and PaO2/PAO2 (alveolar oxygen tension), displayed CV s equal to that of PaO2; the CV of A-aDO2/PaO2 was significantly greater than that of PaO2. Conclusions: In critically ill medical ICU patients, despite sedation, the spontaneous variability in PaO2 over time is substantial. A high PEEP or IRV does not contribute to the increased variation in PaO2.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1572-9605
    Keywords: YBCO ; Cooper pair ; thin films ; ultrafast phenomena
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The transient photoimpedance response of epitaxial YBa2Cu3O7−δ thin films has been studied using 100 fs Ti:Sapphire laser pulse excitation. Both temperature and photon energy dependence of the fast optical response signal (whose temperature dependence can be explained by a kinetic inductance model involving Cooper pair breaking) were studied. The pair breaking rate is strongly photon energy-dependent, with a resonance around 1.5 eV with a width of only 100 meV, which is very surprising given the strong electron correlation in this metallic system and may be explained in terms of the stripe phase model.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 18 (1999), S. 571-575 
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 18 (1999), S. 801-803 
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 34 (1999), S. 727-733 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Films of lead lanthanum titanate (PLT) are deposited on n-type (100) Si and Pt/TiO2/Ti/ SiO2/(100)Si substrates by using ultrasonic nebulized spray deposition. In this work, Pb(CH3COO)2 ċ 3H2O, La(NO3)3 ċ 6H2O, Ti(i-C3 H7O)4 are used as reactants. Experimental results reveal that the films are transformed from tetragonal to nearly cubic as the lanthanum content increases. The refractive index and grain size decrease with the increase of La content in the films. From C-V and I-V measurements of the Al/PLT/n-Si (MIS) and Pt/PLT/Pt/TiO2/Ti/ SiO2/n-Si (MIM) structures, the dielectric properties are determined. The permittivities are found to increase with the La content to a maximum value of about 275 and 530 for the MIS and MIM structures, respectively, and then decrease with further increase of La content for the films grown at 550°C. The results of I-V measurements indicate that the leakage currents of the MIS structure are higher than in the MIM structure. The P-E hysteresis loop became slimmer with the increase of La concentration due to lower tetragonality (c/a), and when the La content is higher than 20 mol %, the films behave like a normal dielectric.
    Type of Medium: Electronic Resource
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