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  • 2000-2004  (9)
  • 1990-1994
  • 2001  (3)
  • 2000  (6)
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  • 2000-2004  (9)
  • 1990-1994
Year
  • 1
    Electronic Resource
    Electronic Resource
    Nature of the Schottky-type barrier of highly dense SnO2 systems displaying nonohmic behavior (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6545-6548 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical characteristics of highly dense SnO2 ceramic varistors are believed to be caused by the existence of potential barriers at the grain boundary. A complex plane analysis technique (to eliminate the influence of trapping activity associated with the conductance term observed via depression angle of a semicircular relaxation in the complex capacitance plane), allied with an approached Mott–Schottky model, are used to demonstrate that the potential barriers at the grain boundary are Schottky-type barriers in SnO2 varistors such as those observed in the traditional ZnO varistor. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1320012
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  • 2
    Electronic Resource
    Electronic Resource
    Ferroelectric and microstructural characteristics of SrBi2Ta2O9 thin films crystallized by the rapid thermal annealing process (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3416-3419 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric SrBi2Ta2O9 thin films on Pt/Ti/SiO2/Si were successfully synthesized by the modified polymeric precursor method. The films were deposited by spin coating and crystallized by rapid thermal annealing in a halogen lamp furnace, followed by postannealing at temperatures ranging from 700 °C to 800 °C in an oxygen atmosphere. Microstructural and phase evaluations were followed by x-ray diffraction and atomic force microscopy. The films displayed spherical grain structures with a superficial roughness of approximately 3–6 nm. The dielectric constant values were 121 and 248 for films treated at 700 °C and 800 °C, respectively. The P–E curve showed a voltage shift toward the positive side, which was attributed to crystallization under the halogen illumination. The remanent polarization (2Pr) and coercive field (Ec) were 7.1 μC/cm2 and 113 kV/cm, and 18.8 μC/cm2 and 93 kV/cm for the films treated at 700 °C and 800 °C, respectively. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1345850
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of the postannealing atmosphere on the dielectric properties of (Ba, Sr)TiO3 capacitors: Evidence of an interfacial space charge layer (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2433-2435 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric properties of (Ba, Sr)TiO3 films were found to be remarkably sensitive to the postannealing treatment atmosphere. This study demonstrates that postannealing in an oxygen atmosphere increases the dielectric relaxation phenomenon and that postannealing in a nitrogen atmosphere produces a slight dielectric relaxation. Such dependence of the dielectric relaxation was related both to oxygen vacancies and to the presence of negatively charged oxygen, trapped at the grain boundary and/or at the electrode/dielectric film interface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126367
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  • 4
    Electronic Resource
    Electronic Resource
    Role of oxygen at the grain boundary of metal oxide varistors: A potential barrier formation mechanism (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 48-50 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model is proposed here to explain how the chemical features of metal oxide varistors can alter their nonohmic physical behavior, based on nonohmic similarities in the electrical properties of ZnO- and SnO2-based varistors. The proposed model explains the electrical properties of ZnO- and SnO2-based varistors before and after thermal treatments in oxygen- and nitrogen-rich atmospheres, which cause similar changes in the nonohmic feature of these polycrystalline ceramics with greatly differing chemical compositions and microstructures. The model is based on the key role that oxygen plays in varistor grain boundaries, independently of the type of ceramic system (ZnO-, SnO2- or even SrTiO3-based varistors) involved. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1378051
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  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence of nanostructured PbTiO3 processed by high-energy mechanical milling (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2148-2150 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports on a process to prepare nanostructured PbTiO3 (PT) at room temperature with photoluminescence (PL) emission in the visible range. This process is based on the high-energy mechanical milling of ultrafine PbTiO3 powder. The results suggest that high-energy mechanical milling modifies the particle's structure, resulting in localized states in an interfacial region between the crystalline PT and the amorphous PT. These localized states are believed to be responsible for the PL obtained with short milling times. When long milling times are employed, the amorphous phase that is formed causes PL behavior. An alternative method to process nanostructured wide-band-gap semiconductors with active optical properties such as PL is described in this letter. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1362200
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  • 6
    Electronic Resource
    Electronic Resource
    Direct Amorphous-to-Cubic Perovskite Phase Transformation for Lead Titanate (2000)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 83 (2000), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The phase evolution of lead titanate processed by the polymeric precursor method was investigated by thermal analysis, X-ray diffraction, and high-resolution transmission electron microscopy. The results showed that the cubic perovskite PbTiO3 (PT) phase is formed from an inorganic amorphous precursor at a temperature of 444°C. A gradual transition from cubic to tetragonal perovskite PT was observed with the increase of calcination time at this temperature. HRTEM results showed that the cubic PT particles have a size of around 5 nm. The identification of cubic PT as an intermediate phase supports the hypothesis that the chemical homogeneity was kept at the molecular level during the synthesis process, with no cation segregation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2000.tb01427.x
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  • 7
    Electronic Resource
    Electronic Resource
    Preparation and properties of ferroelectric BaTiO3 thin films produced by the polymeric precursor method (2000)
    Springer
    Journal of materials science 19 (2000), S. 1457-1459 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1011027624446
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of Ta2O5 doping on the electrical properties of 0.99SnO2·0.01CoO ceramic (2000)
    Springer
    Journal of materials science 35 (2000), S. 1453-1458 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The effect of Ta2O5 doping in 0.99SnO2·0.01CoO on the microstructure and electrical properties of this ceramic were analyzed in this study. The grain size was found to decrease from 6.87 μm to 5.68 μm when the Ta2O5 concentration increased from 0.050 to 0.075 mol%. DC electrical characterization showed a dramatic increase in the current loss and decrease in the non-linear coefficient with the increase of the Ta2O5 concentration. The conduction mechanism is by thermionic emission and the potential barriers are of Schottky type, separated by a thin film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004748006457
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  • 9
    Electronic Resource
    Electronic Resource
    High dielectric constant of SrTiO3 thin films prepared by chemical process (2000)
    Springer
    Journal of materials science 35 (2000), S. 4783-4787 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract SrTiO3 thin films were prepared by the polymeric precursor method and deposited by spin-coating onto Pt/Ti/SiO2/Si(100) substrates. The spin-coated films heat treated at 700°C were crack-free, dense, and homogeneous. Microstructural and morphological evaluations were followed by grazing incident X-ray, scanning electron microscopy and atomic force microscopy. Dielectric studies indicated a dielectric constant of about 475, which is higher than that of ceramic SrTiO3, and a factor dissipation of about 0.050 at 100 kHz. SrTiO3 thin films were found to have paraelectric properties with C-V characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004816611050
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