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  • 2005-2009  (88)
  • 1
    Book
    Book
    ¬The¬ traveling salesman problem / (2006)
    Princeton [u.a.] :Princeton Univ. Press,
    Details
    Title: ¬The¬ traveling salesman problem /
    Contributer: Applegate, David L. , Bixby, Robert E. , Chvatal, Vasek , Cook, William J.
    Publisher: Princeton [u.a.] :Princeton Univ. Press,
    Year of publication: 2006
    Pages: IX, 593 S. : , Ill., graph. Darst.
    Series Statement: Princeton series in applied mathematics
    ISBN: 0-691-12993-2 , 978-0-691-12993-8
    Type of Medium: Book
    Language: English
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  • 2
    Electronic Resource
    Electronic Resource
    Optimal Simulation for Large Dynamic Systems (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Advances in science and technology Vol. 56 (Sept. 2008), p. 147-153 
    Details
    ISSN: 1662-0356
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Natural Sciences in General , Technology
    Notes: Like most engineering design problems, simulationdesign for large dynamic systems should seek a trade-o® between performance and cost. Here the perfor-mance is de¯ned by simulation accuracy; and thecost is related to computational resource, measuredby the total wordlength. The simulation accuracydepends on model complexity, model realization andcomputational implementation. The optimal simula-tion problem is to determine all these factors to en-sure desired accuracy with available computationalresource. When computational cost is the primaryconcern, one can minimize the computational re-source with simulation accuracy constraint. We de-¯ne the economical simulation problem (ESP) as de-signing the simulation of a stable linear system anddistributing computational resources (wordlength)among the digital devices such that the computa-tional cost(memory) is minimized without violat-ing the required simulation accuracy. This problemis generally not convex because of the scaling con-straint. By exploring the special structure of thisjoint optimization of the choice of the realizationsand the computational resources to be applied, andunder a scaling assumption, the ESP is converted toa convex problem. Numerical results are given whichcompare this method with existing approaches
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/42/transtech_doi~10.4028%252Fwww.scientific.net%252FAST.56.147.pdf
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    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Prediction of Critical Blank-Holding Force Criterion to Prevent Wrinkles in Axi-Symmetric Cup Drawing (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 505-507 (Jan. 2006), p. 1273-1278 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The repression of wrinkling during sheet metal forming has been a significant issue inrecent years. In order to provide a reliable and efficient tool to predict the critical blank holding force to prevent wrinkles, an axi-symmetric analytical model for flange wrinkling is introduced here. Using a conventional theory of the critical condition, the critical blank-holding force and wave numbers are numerically predicted. Comparison between the numerical and experimental results shows excellentagreement for various blank dimensions and materials
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/12/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.505-507.1273.pdf
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    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Convolute Cut-Edge Design with a New Anisotropic Yield Function for Earless Target Cup in a Circular Cup Drawing (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 505-507 (Jan. 2006), p. 1297-1302 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: A convolute cut-edge design is performed using FEM (Finite Element Method) for a single step cup drawing operation in order to produce an earless cup profile. Mini-die drawing based on a circular blank shape is initially carried out in order to verify the earing prediction of the Yld2004 anisotropic model (Barlat et al. [1]) for a body stock material. Realistic cup geometry is then employed to design a non-circular convolute edge shape. An iterative procedure based on finite element method is initially used to design a convolute shape for an earless target cup height. Aconstant strain method is suggested to obtain a new convolute prediction for the next iteration from the current solution. It is proven that Yld2004 model is accurate to predict the anisotropy of the material
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/12/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.505-507.1297.pdf
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Overlapping Shockley/Frank Faults in 4H-SiC PiN Diodes (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 383-386 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Using light emission imaging (LEI), we have determined that not all planar defects in4H-SiC PiN diodes expand in response to bias. Accordingly, plan-view transmission electronmicroscopy (TEM) observations of these diodes indicate that these static planar defects are differentin structure from the mobile stacking faults (SFs) that have been previously observed in 4H-SiCPiN diodes. Bright and dark field TEM observations reveal that such planar defects are bounded bypartial dislocations, and that the SFs associated with these partials display both Frank and Shockleycharacter. That is, the Burgers vector of such partial dislocations is 1/12〈4-403〉. For sessile Frankpartial dislocations, glide is severely constrained by the need to inject either atoms or vacancies intothe expanding faulted layer. Furthermore, these overlapping SFs are seen to be fundamentallydifferent from other planar defects found in 4H-SiC
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.383.pdf
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    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Examining Dislocations in SiC Epitaxy by Light Emission from Simple Diode Structures (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 387-390 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: With a simple processing sequence using only patterned aluminum (Al), dislocations andstacking faults were examined in thick n- epitaxial layers including a grown p+ layer on top. Thethicknesses of the n- layers were 100 and 150 μm, values that are typical for fabricating 10 kV PiNdiodes. High temperature sintering of the metal film was avoided making this a potentiallynondestructive scheme for evaluating SiC epitaxy. Faulting of basal plane dislocations (BPDs) andthe resulting forward voltage, Vf, increase were examined at current densities up to 20 A/cm2. Asimple guard ring structure defined in the Al pattern was successfully used to confine the currentthrough the epitaxial layers to the area inside of the ring. Kelvin contacts compensated for voltagedrops at the Al/SiC interfaces. As a result, current-voltage characteristics and electroluminescentimaging were obtained across a known area of the PiN layer at currents densities ranging from 20A/cm2 to 7 × 10-3 A/cm2
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.387.pdf
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    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Silicon Carbide Power Diodes as Radiation Detectors (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 1465-1468 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: We have tested the radiation detection performance of Silicon Carbide (SiC) PIN diodesoriginally developed as high power diodes. These devices consist of 100 micron thick SiC grownepitaxially on SiC substrates. The size and thickness of the devices make them appropriate for anumber of radiation detection applications. We tested 0.25 cm2 and 0.5 cm2 devices and obtainedX-ray spectra under illumination with an Am-241 radioactive source. The spectra showed an energyresolution that was consistent with the resolution expected for the large capacitance of the device.Smaller devices with a diameter of 1 mm were also tested and produced spectra with a roomtemperature energy resolution of ~550 eV, which is consistent with the electronics limit for thecapacitance of the small device. We measured the absolute charge generated by X-rays per KeV inSiC by comparing the charge generation with similar silicon devices and determined the energyrequired per electron hole pair in SiC to be 8.4 eV. We also performed radiation damage tests onthese devices and found no significant loss in charge collection up to a photon dose of 100 MRad.Applications for these devices can be found in the fields of particle physics, nuclear physics,nuclear medicine, X-ray fluorescence, X-ray astronomy and X-ray navigation
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1465.pdf
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    Improving Switching Characteristics of 4H-SiC Junction Rectifiers Using Epitaxial and Implanted Anodes with Epitaxial Refill (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 1363-1366 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The on-state and switching performance of high voltage 4H-SiC junction rectifiers arecompared using numerical simulations and experimental characterization. Epitaxial and implantedanode PiN diodes as well as novel, advanced rectifiers have been fabricated in 4H-SiC using 110μmthick drift layers. The relatively low forward voltage drop of these epi-anode diodes (4.2V @100A/cm2) indicates moderate conductivity modulation, while the superior switching performanceof the “MPS-like” rectifiers is demonstrated with reverse recovery characteristics at varioustemperatures and forward current densities
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1363.pdf
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 1409-1412 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: SiC BJTs show instability in the I-V characteristics after as little as 15 minutes ofoperation. The current gain reduces, the on-resistance in saturation increases, and the slope of theoutput characteristics in the active region increases. This degradation in the I-V characteristicscontinues with many hours of operation. It is speculated that this phenomenon is caused by thegrowth of stacking faults from certain basal plane dislocations within the base layer of the SiC BJT.Stacking fault growth within the base layer is observed by light emission imaging. The energy forthis expansion of the stacking fault comes from the electron-hole recombination in the forwardbiased base-emitter junction. This results in reduction of the effective minority carrier lifetime,increasing the electron-hole recombination in the base in the immediate vicinity of the stackingfault, leading to a reduction in the current gain. It should be noted that this explanation is only asuggestion with no conclusive proof at this stage
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1409.pdf
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    On the Formation of a Non-Traditional Pearlite Morphology (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 539-543 (Mar. 2007), p. 4544-4549 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Continuous cooling and isothermal dilatometry was performed for a binary Fe-0.3C alloyand a ternary Fe-0.3C-1.0Mn alloy at slow (〈 0.1 oC/s) cooling rates and isothermally at temperaturesbelow the equilibrium eutectoid reaction temperature but above the bainite start temperature (625 to715 oC). Some of the test conditions produced an unusual morphology in which fine scale‘sub-grains’ are decorated with carbide, with additional discrete carbide particles inside the‘sub-grains’. A detailed investigation into the network carbide formation indicates formation duringaustenite decomposition, as opposed to a post lamellar transformation coarsening or spheroidizationreaction, but only for select temperatures, and apparently only during isothermal conditions
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/15/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.539-543.4544.pdf
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    Paper (German National Licenses)
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