ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Sloped sidewalls in 4H-SiC mesa structures on the (000-1) C face were formed by aCl2-O2 thermal etching method. The etching rate of 4H-SiC (000-1) C face was 10 times faster thanthat of (0001) Si face, and the etching rate at 910oC was about 18μm/h. The etched surface wasrather smooth, and the sidewall of the mesa was inclined to the off-axis substrate. Taking intoaccount the off angle of about 8o toward [11-20] off direction, the angles of the sidewalls were52-56o for the 〈1-100〉 and 55-57o for the 〈11-20〉 directions from the crystallographically accurate(000-1) C face. Epitaxial pn junction diodes with the sloped sidewalls structure were fabricated,which had good electrical properties
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.733.pdf
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