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  • 1
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The improvement of potential confinement was attained in the GAMMA 10 tandem mirror [Phys. Rev. Lett. 55, 939 (1985); Proceedings of the 13th International Conference on Plasma Physics and Controlled Nuclear Fusion Research, Washington, 1990 (International Atomic Energy Agency, Vienna, 1991), Vol. 2, p. 539] by axisymmetrization of heating systems for the plasma production, heating, and potential formation. A significant increase of the density and diamagnetism by the potential confinement was observed. In the previous experiment, it was difficult to increase the central cell density higher than 2.7×1018 m−3. One of the possible mechanisms is the density clamping due to the eigenmode formation of the ion–cyclotron-range of frequency (ICRF) waves in the axial direction. With high harmonic ICRF waves (RF3), the experiments to overcome this problem have been performed. In preliminary experiments with RF3 and NBI the maximum density of 4×1018 m−3 was attained. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 9 (2002), S. 3449-3458 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A formation mechanism of the plug potential in a tandem mirror is proposed. The orbits for ions, which are accelerated by the thermal barrier potential, are calculated numerically in a magnetic mirror field. A non-Maxwellian electron distribution function, which leads to a modified Boltzmann law, is assumed in order to determine the electrostatic potential profile. Monte Carlo simulation is carried out for ion dynamics to include the effects of Coulomb collisions and ion radial losses. It is found that the plug potential is formed under the condition that the ions trapped in the thermal barrier region are few. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7209-7212 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co–P powders were produced by chemical reduction. The powders had a spherical shape with an average diameter of about 1 μm. X-ray diffraction and differential scanning calorimetry studies confirmed that the powders were amorphous. The amorphous powders showed higher saturation magnetization than the crystalline counterparts. Heat treatment of the powders above the crystallization temperature resulted in the formation of fcc Co, hcp Co, and Co2P phases. The saturation magnetization of the annealed powders monotonically decreased as the annealing temperature increased. On the other hand, the coercivity of the annealed powders rapidly increased with increasing annealing temperature. The powders annealed at 600 °C had a saturation magnetization of 100 emu/g with a coercivity of 500 Oe. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2236-2238 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Copper films were epitaxially grown on (100)Si substrates at room temperatures utilizing low kinetic-energy particle bombardment of growing copper film surfaces. The crystallographic structure of the film, such as (100) or (111) orientation, was selected by controlling the energy of incident particles. Low-temperature, damage-free substrate surface cleaning has also been realized by the low kinetic-energy particle process, which has made it possible to form ideal metal-semiconductor contacts without employing any alloying heat cycles.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1300-1302 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Valence bands of Ga/As/Ge (001) monolayer superlattices (MLSLs) are calculated by Harrison's tight-binding method. The MLSLs have two possible types of growth cycles: a (Ga,As,Ge,Ga,As,Ge) cycle for an antiphase type (AP type) and a (Ga,As,Ge,As,Ga,Ge) cycle for a normal phase type (NP type). Cations and anions in the AP type occupy "antisites'' of the zinc blende structure while those in the NP type occupy only "normal sites.'' The two types have distinct features of the valence bands concerning degeneracy of the bands at the zone boundary, splitting of the valence-band maximum due to the tetragonal symmetry, and valence-band discontinuity in a (bulk Ge)/(the MLSL) junction.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2733-2737 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new version for the marlowe code, which enables dynamic simulation of damage processes during ion implantation to be performed, has been developed. This simulation code is based on uses of the Ziegler–Biersack–Littmark potential [in Proceedings of the International Engineering Congress on Ion Sources and Ion-Assisted Technology, edited by T. Takagi (Ionic Co., Tokyo, 1983), p. 1861] for elastic scattering and Firsov's equation [O. B. Firsov, Sov. Phys. JETP 61, 1453 (1971)] for electron stopping. By introducing a damage function f(z)=l−exp[−ΔE(z)/Ecrit], where ΔE(z) is the deposition energy due to nuclear stopping per unit volume at depth z and Ecrit is the critical energy assessed from the experiment, the present code allows us to simulate how the crystalline structure at depth z transforms to the disordered structure, resulting in the marked change in the penetration of implanted ions as ion implantation proceeds. To examine the applicability of the present simulation code for practical ion implantation, we have performed dynamic simulations of the depth profile of implanted ions considering the changes in the crystalline structure due to disordering during ion implantations, and the results are compared with the experimental results of Mayer et al. [Can. J. Phys. 46, 664 (1968)]. The agreement between theoretical and experimental results has been found to be very good. A prediction on the dose dependence of lattice disorder for practical low-dose implantation in GaAs is also presented.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 1715-1717 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Neutron generators, both D–D and D–T, have been used to calibrate the TFTR neutron activation (NA) system for point sources located within the tokamak. The foils used were In for D–D neutrons and Cu, Al, and 238U for D–T neutrons. Delayed neutrons following fission were counted when using 238U foils, 336-keV γ rays from 115In(n,n')115m In reactions, annihilation radiation from 62Cu following the 63Cu(n,2n)62Cu reaction, and 1368- and 2754-keV γ rays from the 27Al(n,α)24Na reaction. Large effects caused by source anisotropy and local machine structure were observed. These effects and the attempts to accommodate them in the data analysis will be described.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2303-2306 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The spectral quantum efficiencies and reflectances of p-i-n-type Si photodiodes and a Schottky-type GaAsP photodiode were measured in the wavelength region between 105 to 300 nm. These results are compared with an optical model using complex refractive indices. The spectral relative external quantum efficiencies are well interpreted within the model by assuming that the production energy of an electron-hole pair, ε, is wavelength independent. It is suggested that surface recombination of minority carriers occurs in some devices. The internal quantum efficiency for the GaAsP photodiode is shown to be constant in the photon energy range below about 5.4 eV. The recombination loss and the ε value are separately estimated.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The primary TFTR neutron source strength measurement system consists of seven fission detectors previously calibrated with D–D and D–T neutron generators and a 252Cf neutron source inside the TFTR vacuum vessel. A recalibration became desirable because of the addition of major components to the tokamak. The new calibration with the D–D neutron generator in situ is consistent with the detection efficiencies measured in the previous calibrations, within the uncertainties. Effects of the anisotropic emission of the neutron generator, due both to the variation of the differential D–D yield with angle (similar to that from beam–target and beam–beam reactions in the beam-driven TFTR plasma) and to scattering and absorption by the generator heads have been observed.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 764-765 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A demountable vacuum window of fused quartz was designed and successfully used for a high-power circular waveguide system combined with 28-GHz gyrotrons for electron cyclotron resonance heating experiments in the GAMMA 10 tandem mirror. The power reflection coefficient is very low (≤0.1%) and it works satisfactorily at the transmitted power level of 120 kW with 60-ms pulse width. No problems are expected up to 200-kW transmission with 0.1-s duration.
    Type of Medium: Electronic Resource
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