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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1473-1475 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electroabsorption (EA) of CdS0.1Se0.9 nanocrystals was measured under pulse-like modulated fields and recovered both with similar frequency (1f ) and with double frequency (2 f ) of the applied field. The EA properties and the effects of applied field form and recovered frequency on the EA properties were studied. Electric field induced strong change of absorption (10−3) was observed in resonant and nonresonant regions. The EA signal in the resonant region was due to the quantum confined Stark effects and the signal in the nonresonant region was due to the change of local field that resulted in the change of refractive index, the change of absorption. The quadratic dependence of EA signal intensity on the electric fields indicated that the nanocrystals had third nonlinear optical susceptibility. The EA signal intensity measured with 1f mode was about ten times of that measured with 2 f mode. Perhaps the lower response measured with 2 f mode was due to the measured mode and the different response coefficient in different frequency regions. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6845-6847 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The TbCo/Si multilayers prepared by the rf magnetron sputtering system with various Si thickness have been investigated. X-ray diffraction, magnetic measurement and Kerr rotation have been performed. No antiferromagnetic coupling was found for the system. With the thickness of Si layer tSi increasing, the perpendicular anisotropy constant Ku, and the saturation magnetization Ms decreased rapidly. It was assumed that Co2Si and Tb had been formed in the interfacial zone between TbCo and Si layers due to the interlayer diffusion. The decreasing of Ms is attributed to the decreasing of the effective thickness of magnetic layer. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7589-7591 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared emission at 1.54 μm excited optically and electrically from an erbium organic compound tris(acetylacetonato)(1,10-phenanthroline) erbium [Er(acac)3(phen)] is observed. The rare-earth complex is dispersed into a polymer matrix of poly(N-vinylcarbazole) (PVK) to fabricate an electroluminescent (EL) device with an ITO/PVK:Er(acac)3(phen)/Al:Li/Ag structure, where ITO represents indium–tin–oxide-coated glass. The device shows infrared EL emission at 1.54 μm, which suggests a simple and cheap method to obtain a light source for 1.54-μm-wavelength devices in optical communications. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6877-6879 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tunneling giant magnetoresistance (MR) of the Fe–Al2O3 nanogranular films has been observed over a wide range of Fe volume fraction x and it took a maximum of 4.4% at room temperature for the film with x=0.45 at H=10 kOe. Furthermore, the field dependence of MR of the samples is well described by the form proportional to the square of the magnetization. Moreover, an estimate of the magnetic anisotropy energy density Ku increases with the decrease of x, yielding a value 2 orders of magnitude greater than the value for bulk Fe when x=0.23. The Bloch's law, MS(T)=MS0(1−BTb), can also hold for all the samples but with nonbulk parameters dependent on the Fe volume fraction. These results reveal a percolation effect on the magnetic properties, as well as the conductance, in such nanogranular films. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6458-6465 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Particulate composites with negative stiffness inclusions in a viscoelastic matrix are shown to have higher thermal expansion than that of either constituent and exceeding conventional bounds. It is also shown theoretically that other extreme linear coupled field properties including piezoelectricity and pyroelectricity occur in layer- and fiber-type piezoelectric composites, due to negative inclusion stiffness effects. The causal mechanism is a greater deformation in and near the inclusions than the composite as a whole. A block of negative stiffness material is unstable, but negative stiffness inclusions in a composite can be stabilized by the surrounding matrix and can give rise to extreme viscoelastic effects in lumped and distributed composites. In contrast to prior proposed composites with unbounded thermal expansion, neither the assumptions of void spaces nor slip interfaces are required in the present analysis. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 488-492 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron energy-loss spectroscopy (EELS) has been used to determine the valence state of manganese for all the samples at low temperature (93 K). EELS results indicate that the valence state of manganese keeps constant (∼3.5) for all the samples. The effects of the A-site cation size mismatch on the charge ordering (CO) behaviors in the manganites (La1−xYx)0.5(Ca1−ySry)0.5MnO3 are studied by transmission electron microscopy (TEM). TEM images show that the size mismatch and disorder of A-site cations have a suppression effect on the CO transition. The schematic models are proposed for the incommensurate CO modulation in the samples with size mismatch σ2≤0.003. The disappearance of the CO transition in the sample with the largest mismatch (σ2=0.005) is explained by the random arrangements of Mn3+ and Mn4+ ions. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6994-6996 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: On the basis of a micromagnetic model, magnetization reversal in two antiferromagnetically coupled ferromagnetic layers (10 nm t1/0.9 nmM/t2 nm films with t2=2, 3, 4, 5 nm, here t1 and t2 are the top and bottom layers, respectively, and M the spacer) with the same random anisotropy arrangement can be represented by a computer simulation. The calculation indicates that the appearance of a full antiferromagnetic coupling at remanence requires the antiferromagnetic coupling constant j=−3.5 erg/cm2 for the 10 nm t1/0.9 nmM/3 nm t2, films and it needs a large j value if t2 increases for the case of Ku2=Ku1=1×106 erg/cm3 and Ms1=Ms2=400 emu/cm3. Hc follows the equation Hc=−0.755j/Mst1 (j〈0). Why the calculated Hc values deviate from Hcmax=−j/Mst1 is discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3762-3764 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strains in cubic GaN films grown on GaAs (001) were measured by a triple-axis x-ray diffraction method. Residual strains in the as-grown epitaxial films were in compression, contrary to the predicted tensile strains caused by large lattice mismatch between epilayers and GaAs substrates (20%). It was also found that the relief of strains in the GaN films has a complicated dependence on the growth conditions. We interpreted this as the interaction between the lattice mismatch and thermal mismatch stresses. The fully relaxed lattice constants of cubic GaN are determined to be 4.5038±0.0009 Å, which is in excellent agreement with the theoretical prediction of 4.503 Å. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 675-677 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A multiplate pseudospark chamber, whose electrodes were fabricated with different metal materials, was designed and tested as a metal ion source. The ion beam implantation combined with Rutherford backscattering (RBS) measurement was used to understand whether these ion beams come from the anode plasma or the cathode plasma. The RBS measurements have demonstrated the following results: (1) pseudospark produced metal ion beams mainly consist of ions from the cathode materials; (2) the ion beam current increases rapidly with the pseudospark discharge voltage first and then saturates; and (3) the energy of the extracted metal ions is much less than the voltage between the anode and the cathode, therefore the high discharge voltage does not correspond to the high ion energy. A possible mechanism of pseudospark producing metal ion beams is discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 646-650 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Recent development of electron cyclotron resonance (ECR) ion sources in China is reviewed. Emphasis is put on high charge state ECR ion sources which have been mainly developed in China by Institute of Modern Physics (IMP). Presently two ECR ion sources built by IMP for highly charged ion beams are put into operation for cyclotrons and atomic physics research. The development of high charge state ECR ion sources at IMP has progressed with a new magnetic field configuration, better condition for extraction of highly charged ions, high mirror magnetic field, large plasma volume, and special techniques to provide extra cold electrons. These techniques greatly enhance the production of highly charged ions from IMP ECR ion sources. So far more than 185 eμA of Ar11+ and 50 eμA of Xe26+ were produced by the IMP ECR ion sources. The metallic ion beam production was tested and the first beam 40Ca11+ was provided to the cyclotrons at IMP. The beam intensity of 40Ca11+ could reach 130 eμA. The next part of this article will report the latest progress of 2.45 GHz ECR ion sources in China. A 2.45 GHz compact permanent magnet proton ion source was designed and constructed by IMP. A new microwave feeding system is applied on this ion source. The ion source is able to deliver 90 mA of mixed ion beam (H1++H2++H3+) after preliminary commissioning. The article also mentions a small 2.45 GHz ECR ion source which was built by Sichuan University and used for industry applications. The dependence of plasma density and electron temperature on radio frequency power, neutral gas pressure, and different microwave windows was measured by a Langmuir probe on this ion source. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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