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  • 2000-2004  (11)
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  • 1
    Electronic Resource
    Electronic Resource
    Dependence of the leakage current on the film quality in polycrystalline silicon thin-film transistors (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2648-2651 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of the material quality and thickness on the leakage current of polycrystalline silicon thin-film transistors is investigated. Improvement of the polycrystalline silicon layer (i.e., increase of the average grain size or decrease of the intragrain defect density) reduces only the leakage current at low electric fields in the drain region. At high electric fields, the leakage current is independent of the film quality and thickness due to the fundamental nature of the leakage current mechanisms. The experimental data indicate that Poole–Frenkel enhanced emission from traps at low electric fields and band-to-band tunneling at high electric fields are the dominant conduction mechanisms of the leakage current. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1288158
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  • 2
    Electronic Resource
    Electronic Resource
    Microstructure and its effect on the conductivity of magnetron sputtered carbon thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7954-7959 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon thin films were grown by magnetron sputtering at room temperature on silicon substrates, with the substrate bias voltage varying from +10 to −200 V. Transmission electron microscopy analysis has shown that films deposited at Vb=+10 and −40 V are amorphous (α-C), while films deposited at Vb=−200 V are nanocrystalline (nc-C). Temperature dependent conductivity measurements were carried out in the temperature range 300–77 K. With respect to conductivity, the results indicate that the investigated carbon films are classified in three groups: (i) In α-C films deposited at Vb=+10 V (sp2 rich bonds), the variable range hopping (VRH) conduction dominates below 300 K. (ii) In α-C films deposited at negative Vb up to −100 V (sp3 rich bonds), VRH conduction dominates at low temperatures (T〈150 K) and a thermally activated process satisfying the Meyer–Neldel rule at higher temperatures (T〉150 K). (iii) In nc-C film deposited at Vb=−200 V, the conductivity is explained by a heteroquantum-dots model based on a thermal-assisted tunneling process. The earlier differentiation in the conductivity mechanisms may play a significant role in the field electron emission properties of the films. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1376413
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  • 3
    Electronic Resource
    Electronic Resource
    Noise characterization of sputtered amorphous carbon films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5482-5484 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-frequency noise measurements have been carried out at room temperature in amorphous carbon (α-C) thin films with the current I as the parameter. The α-C films, rich in sp2 bonds, were prepared by rf magnetron sputtering at room temperature. Hall measurements performed at room temperature show that the α-C films are p-type semiconductors with a hole concentration of about 2.8×1018 cm−3. In α-C film grown on oxidized silicon wafer, the current shows an ohmic behavior for low applied voltages, while the conduction mechanism is dominated by the Poole–Frenkel effect for high applied voltages. In the linear voltage region, the power spectral density of the current fluctuations exhibits 1/fγ (with γ〈1) behavior and is proportional to I2. Using a noise model based on trapping–detrapping of holes of the valence band and the gap states of exponential energy distribution, the noise data can provide an assessment of the distribution of traps within the band gap of the α-C material. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1317234
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  • 4
    Electronic Resource
    Electronic Resource
    Structural, electrical, and low-frequency-noise properties of amorphous-carbon–silicon heterojunctions (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2832-2838 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural, electrical, and low-frequency-noise properties of heterojunctions of amor- phous-carbon (a-C) films grown on either n- or p-type single-crystal silicon are investigated. The a-C films were deposited by rf magnetron sputtering at room temperature with varying the substrate bias Vb, from +10 to −200 V. The study includes measurements of x-ray reflectivity (XRR), low-frequency noise at room temperature, and dark current–voltage (I–V) and capacitance–voltage (C–V) characteristics over a wide temperature range. Analysis of the XRR data indicates the presence of a thin SiC layer between a-C and Si, with thickness increasing up to about 1.8 nm for Vb=−200 V. The results show that the noise properties of the devices are independent of the SiC interlayer and the a-C film deposition conditions, while the noise of the a-C/n-Si heterojunctions is about four orders of magnitude lower than that of the a-C/p-Si heterojunctions. Analysis of the I–V and C–V data shows that the rectification properties of the a-C/n-Si heterojunctions are governed by conventional heterojunction theory, while multistep tunneling is the current conduction mechanism in a-C/p-Si heterojunctions due to a high density of interface states. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1346654
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  • 5
    Electronic Resource
    Electronic Resource
    Gate bias instability in hydrogenated polycrystalline silicon thin-film transistors (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3624-3628 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The instability of n-channel hydrogenated polycrystalline silicon thin-film transistors has been investigated with respect to gate biasing. The hydrogenation was performed by hydrogen ion implantation through the gate oxide. The conduction mechanism in the gate oxide was studied for positive and negative gate bias, showing that the electron tunneling is much higher for positive gate bias. The oxide conduction follows the Fowler–Nordheim (FN) tunneling mechanism for electron tunneling from the channel and Poole–Frenkel for electron tunneling from the gate polysilicon. After constant FN stressing for short duration (〈10 min), the evolution of the transfer characteristics with stress time indicate passivation of the grain boundary dangling bonds by the H+ positive ions introduced into the gate during hydrogenation with simultaneous electron injection into the gate oxide and interface states generation. For longer FN stress duration, the transfer characteristics are degraded due to enhancement of the donor-like interface states generation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289525
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  • 6
    Electronic Resource
    Electronic Resource
    Erratum: "Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors" [J. Appl. Phys. 86, 4600 (1999)] (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1588-1588 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372060
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  • 7
    Electronic Resource
    Electronic Resource
    Electrical properties of magnetron sputtered amorphous carbon films with sequential sp3-rich/sp2-rich layered structure (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3269-3271 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of thick amorphous carbon (a-C) films with sequential sp3-rich/sp2-rich layered structure, grown by magnetron sputtering on Si substrates at room temperature, were investigated. At low electric fields, the conduction is due to the variable range hopping mechanism. At high electric fields, thermally assisted band-to-band indirect tunneling is the dominant conduction mechanism, while the Arrhenius plots of the current show a deviation from straight lines in the form of continuous bending satisfying the Meyer–Nelder rule. Comparative studies of low-frequency noise in sp2-rich single layer and sp3-rich/sp2-rich layered a-C films indicate that the noise in the a-C layered originates from traps located mainly at the interfaces of the sp3-rich/sp2-rich bilayers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1419044
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  • 8
    Electronic Resource
    Electronic Resource
    Investigation of noise sources in platinum silicide Schottky barrier diodes (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1468-1470 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-frequency noise measurements have been carried out in platinum silicide Schottky diodes on n-type silicon in the forward conduction regime and with the forward current IF as a parameter. The power spectral density of the current fluctuations shows a 1/f behavior and is proportional to IFβ (with 1〈β≤2). The experimental noise data have been successfully explained by an existing model of the random walk of electrons via the interface states, modified by taking into account the Schottky barrier inhomogeneity across the interface. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1454208
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical characterization of nanocrystalline carbon–silicon heterojunctions (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 638-640 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocrystalline carbon (nc-C) films were grown by magnetron sputtering on n-type Si substrates at room temperature and at substrate bias voltage −200 V. The electrical transport properties of nc-C/n-Si heterojunctions are investigated by current–voltage measurements at various temperatures and capacitance–voltage measurements at room temperature. The results indicate that the forward conduction is determined by thermionic emission over a potential barrier of height 0.3 eV at temperatures above 180 K. At lower temperatures and low currents, multistep tunneling current dominates. At low reverse voltages, the reverse conduction is dominated by current generated within the depletion region, while at higher voltages the current is due to Poole–Frenkel emission. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1390488
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  • 10
    Electronic Resource
    Electronic Resource
    Threshold voltage of excimer-laser-annealed polycrystalline silicon thin-film transistors (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2442-2444 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Based on experimental studies of n-channel excimer-laser-annealed polycrystalline silicon thin-film transistors with gate ratio width/length varying from 0.5 to 2.5, we propose a reliable method to determine the threshold voltage Vt from linear extrapolation of the transconductance to zero. The results reveal that the determined values of Vt are independent of the device geometry and the applied drain voltage in the linear region, in contrast with the drain current linear extrapolation method. The values of Vt are correlated with the density of the total trap states derived from the subthreshold gate swing voltage. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126370
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