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  • 1
    Electronic Resource
    Electronic Resource
    On the threshold voltage and channel conductance of polycrystalline silicon thin-film transistors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4431-4437 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for the grain-boundary barrier height of undoped polycrystalline silicon thin-film transistors is developed based on a rodlike structure of the grains with a square cross section and a Gaussian energy distribution of the trapping states at the grain boundaries. An analytical expression for the threshold voltage is derived in terms of the distribution parameters of the grain-boundary trapping states, the grain size, and the gate oxide thickness. Comparison between the developed model and the experimental drain current versus gate voltage data has been made and excellent agreement was obtained. The key parameters affecting the threshold voltage and the channel conductance of the transistor were investigated by computer stimulation. The threshold voltage is mainly affected by the grain size and the gate oxide thickness. For the improvement of the channel conductance, besides the passivation of the grain-boundary trapping states, the increase of the grain size and mainly the scaling down of the gate oxide thickness are the key factors. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361752
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  • 2
    Electronic Resource
    Electronic Resource
    Low frequency noise in β-FeSi2/n-Si heterojunctions (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 713-715 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low frequency noise of β-FeSi2/n-Si heterojunctions has been systematically studied with the silicide layer formed by conventional furnace and rapid thermal annealing processes. The noise was found to exhibit 1/f behavior attributed to fluctuations of the generation-recombination current at the interface states. It is shown that noise measurements provide a means of calculating the density and energy distribution of the interface states. The results show that the interface state density is significantly reduced when the silicide is formed by rapid thermal annealing process. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120854
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  • 3
    Electronic Resource
    Electronic Resource
    Determination of bulk states and interface states distributions in polycrystalline silicon thin-film transistors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2919-2924 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The field-effect conductance activation energy Ea as a function of the gate voltage Vg is investigated for polycrystalline silicon thin-film transistors. An analytical expression for Ea is obtained for various models of the bulk and interface states. Using a computer minimization program to fit the experimental Ea vs Vg data with the theory, the energy distribution of the bulk states and the interface states are separated for nonhydrogenated and hydrogenated polycrystalline silicon thin-film transistors. In both cases, the bulk states have exponential band tails and a wide peak near the midgap and the interface states have an exponential distribution from the band edge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354648
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  • 4
    Electronic Resource
    Electronic Resource
    Output characteristics of short-channel polycrystalline silicon thin-film transistors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2177-2183 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytical model for the turn-on current-voltage characteristics of polycrystalline silicon thin-film transistors is presented. The model is based on the drift diffusion-thermionic emission conduction mechanisms and on a continuous distribution in the energy gap of the traps localized at the grain boundaries. The trap distribution and the device parameters involved in the model are determined by fitting the calculated on-state current versus gate voltage curve to the measured one in the linear region. At large drain voltage, the barrier height at the grain boundary becomes asymmetric and the injection of carriers from the lowered barrier side of the boundary is increased resulting in an exponential increase of the drain current with the drain voltage. Using the parameters obtained from the data in the linear region, the output characteristics are calculated. The good agreement between calculated results and experimental data at room temperature and at higher temperatures demonstrates the validity of the proposed current-voltage model. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358796
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  • 5
    Electronic Resource
    Electronic Resource
    Noise characterization of sputtered amorphous carbon films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5482-5484 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-frequency noise measurements have been carried out at room temperature in amorphous carbon (α-C) thin films with the current I as the parameter. The α-C films, rich in sp2 bonds, were prepared by rf magnetron sputtering at room temperature. Hall measurements performed at room temperature show that the α-C films are p-type semiconductors with a hole concentration of about 2.8×1018 cm−3. In α-C film grown on oxidized silicon wafer, the current shows an ohmic behavior for low applied voltages, while the conduction mechanism is dominated by the Poole–Frenkel effect for high applied voltages. In the linear voltage region, the power spectral density of the current fluctuations exhibits 1/fγ (with γ〈1) behavior and is proportional to I2. Using a noise model based on trapping–detrapping of holes of the valence band and the gap states of exponential energy distribution, the noise data can provide an assessment of the distribution of traps within the band gap of the α-C material. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1317234
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  • 6
    Electronic Resource
    Electronic Resource
    Structural, electrical, and low-frequency-noise properties of amorphous-carbon–silicon heterojunctions (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2832-2838 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural, electrical, and low-frequency-noise properties of heterojunctions of amor- phous-carbon (a-C) films grown on either n- or p-type single-crystal silicon are investigated. The a-C films were deposited by rf magnetron sputtering at room temperature with varying the substrate bias Vb, from +10 to −200 V. The study includes measurements of x-ray reflectivity (XRR), low-frequency noise at room temperature, and dark current–voltage (I–V) and capacitance–voltage (C–V) characteristics over a wide temperature range. Analysis of the XRR data indicates the presence of a thin SiC layer between a-C and Si, with thickness increasing up to about 1.8 nm for Vb=−200 V. The results show that the noise properties of the devices are independent of the SiC interlayer and the a-C film deposition conditions, while the noise of the a-C/n-Si heterojunctions is about four orders of magnitude lower than that of the a-C/p-Si heterojunctions. Analysis of the I–V and C–V data shows that the rectification properties of the a-C/n-Si heterojunctions are governed by conventional heterojunction theory, while multistep tunneling is the current conduction mechanism in a-C/p-Si heterojunctions due to a high density of interface states. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1346654
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  • 7
    Electronic Resource
    Electronic Resource
    Low-frequency noise in polycrystalline semiconducting FeSi2 thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4091-4095 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-frequency noise measurements have been carried out at room temperature in polycrystalline semiconducting iron disilicide (β-FeSi2) thin film with the current I as a parameter. The power spectral density of the current fluctuations exhibits a 1/f behavior at low frequencies (f〈100 Hz) and is proportional to Iβ (β〈2). The temperature dependence of the conductivity shows that, at room temperature, the measured noise is related to a thermally activated transport mechanism, which satisfies the Meyer–Neldel rule. A noise theory has been developed on the basis of trapping-detrapping of holes of the valence band and the gap states taking into account mobility inhomogeneity across the thickness of the film. Using the experimental data of Hall, conductivity, and noise measurements, the noise model provides an assessment of the distribution of traps within the energy gap of the β-FeSi2 material. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370316
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  • 8
    Electronic Resource
    Electronic Resource
    Electrical properties of magnetron sputtered amorphous carbon films with sequential sp3-rich/sp2-rich layered structure (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3269-3271 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of thick amorphous carbon (a-C) films with sequential sp3-rich/sp2-rich layered structure, grown by magnetron sputtering on Si substrates at room temperature, were investigated. At low electric fields, the conduction is due to the variable range hopping mechanism. At high electric fields, thermally assisted band-to-band indirect tunneling is the dominant conduction mechanism, while the Arrhenius plots of the current show a deviation from straight lines in the form of continuous bending satisfying the Meyer–Nelder rule. Comparative studies of low-frequency noise in sp2-rich single layer and sp3-rich/sp2-rich layered a-C films indicate that the noise in the a-C layered originates from traps located mainly at the interfaces of the sp3-rich/sp2-rich bilayers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1419044
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical characterization of nanocrystalline carbon–silicon heterojunctions (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 638-640 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocrystalline carbon (nc-C) films were grown by magnetron sputtering on n-type Si substrates at room temperature and at substrate bias voltage −200 V. The electrical transport properties of nc-C/n-Si heterojunctions are investigated by current–voltage measurements at various temperatures and capacitance–voltage measurements at room temperature. The results indicate that the forward conduction is determined by thermionic emission over a potential barrier of height 0.3 eV at temperatures above 180 K. At lower temperatures and low currents, multistep tunneling current dominates. At low reverse voltages, the reverse conduction is dominated by current generated within the depletion region, while at higher voltages the current is due to Poole–Frenkel emission. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1390488
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  • 10
    Electronic Resource
    Electronic Resource
    The Meyer–Neldel rule in the conductivity of polycrystalline semiconducting FeSi2 films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2960-2962 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical transport properties of polycrystalline semiconducting β-FeSi2 films have been evaluated by conductivity (σ) measurements over the temperature range 50–300 K. At low temperatures (T〈200 K), a variable range hopping conduction was observed, from which the number of states near the Fermi level and the degree of disorder in the material were obtained. At moderate temperatures (200–300 K), the ln σ vs 103/T curves show anomalous features such as kinks or continuous bending. In this temperature range, the conductivity data satisfy the Meyer–Neldel rule, (MNR), which is of fundamental importance for the transport properties of the β-FeSi2. The results show that the MNR parameters are related with the degree of disorder in the material. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368402
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