Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
79 (1996), S. 4431-4437
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A model for the grain-boundary barrier height of undoped polycrystalline silicon thin-film transistors is developed based on a rodlike structure of the grains with a square cross section and a Gaussian energy distribution of the trapping states at the grain boundaries. An analytical expression for the threshold voltage is derived in terms of the distribution parameters of the grain-boundary trapping states, the grain size, and the gate oxide thickness. Comparison between the developed model and the experimental drain current versus gate voltage data has been made and excellent agreement was obtained. The key parameters affecting the threshold voltage and the channel conductance of the transistor were investigated by computer stimulation. The threshold voltage is mainly affected by the grain size and the gate oxide thickness. For the improvement of the channel conductance, besides the passivation of the grain-boundary trapping states, the increase of the grain size and mainly the scaling down of the gate oxide thickness are the key factors. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.361752
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