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Low frequency noise in β-FeSi2/n-Si heterojunctions (1998)

Tassis, D. H. ; Dimitriadis, C. A.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 72 (1998), S. 713-715

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Low frequency noise of β-FeSi2/n-Si heterojunctions has been systematically studied with the silicide layer formed by conventional furnace and rapid thermal annealing processes. The noise was found to exhibit 1/f behavior attributed to fluctuations of the generation-recombination current at the interface states. It is shown that noise measurements provide a means of calculating the density and energy distribution of the interface states. The results show that the interface state density is significantly reduced when the silicide is formed by rapid thermal annealing process. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.120854

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