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  • 1
    Electronic Resource
    Electronic Resource
    Domain wall trapping in controlled submicron ferromagnetic elements (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4727-4729 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The domain configuration in permalloy wires (30 nm thick, 10 μm wide, and 205 μm long) with a wide size range of a narrow central bridge (5 μm long and w μm wide; 0.5≤w≤10 μm) were investigated in both their demagnetized and remanent states using magnetic force microscopy and the results were confirmed by micromagnetic calculations. At the bridge region, domain walls were found to be shifted by a small external field. Scanning magneto-optical Kerr effect revealed that the coercivity in these structures are the same as that in a straight wire, suggesting that domain wall movement is the dominant process in the magnetization reversal of these structures. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373140
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  • 2
    Electronic Resource
    Electronic Resource
    Micromagnetism in mesoscopic epitaxial Fe dot arrays (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7019-7021 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The domain structures of epitaxial Fe (20 nm)/GaAs(100) circular dot arrays (diameters from 50 to 1 μm) were studied with magnetic force microscopy. A transition from a single domain to a multidomain remanent state was observed upon reducing the dot diameter beneath 10 μm in dot arrays with the separation twice the dot diameter. When the separation is reduced to half the dot diameter, the single domain states were found to "collapse" into stripe-like multidomain states due to local dipole coupling between dots. Micromagnetic simulations further suggest that for ultrathin Fe dots of less than about 2 nm thickness the diameter does not have a significant influence on the domain structures due to a dramatic reduction of the dipole energy. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372917
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  • 3
    Electronic Resource
    Electronic Resource
    Domain nucleation processes in mesoscopic Ni80Fe20 wire junctions (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3032-3036 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetization reversal process in permalloy (Ni80Fe20) wire junction structures has been investigated using magnetoresistance (MR) measurements and scanning Kerr microscopy. A combination of electron beam lithography and a lift-off process has been utilized to fabricate wires consisting of two 200 μm length regions with distinct widths w1 and w2 in the range 1–5 μm. Longitudinal MR measurements and magneto-optic Kerr effect hysteresis loops demonstrate that the magnetization reversal of the complete structure is predominantly determined by the wider region for fields applied parallel to the wire axis. Magnetic force microscopy and micromagnetic calculations show that several domain walls nucleate in the wider part and are trapped in the junction area. This implies that domain nucleation at the junction of the wire initiates magnetization reversal in the narrow half. As a consequence, the switching fields are found to be identical in both halves in this case. These results suggest the possibility of designing structures which can be used to "launch" reverse domains in narrow wires within a controlled field range. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372295
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  • 4
    Electronic Resource
    Electronic Resource
    Mapping quantitative and qualitative disease resistance genes in a doubled haploid population of barley (Hordeum vulgare) (2000)
    Springer
    Theoretical and applied genetics 101 (2000), S. 580-589 
    Details
    ISSN: 1432-2242
    Keywords: Key words Barley ; Genome mapping ; Stripe rust ; Leaf rust ; BYDV ; Resistance Gene Analog Polymorphism ; QTL
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  Stripe rust, leaf rust, and Barley Yellow Dwarf Virus (BYDV) are important diseases of barley (Hordeum vulgare L). Using 94 doubled-haploid lines (DH) from the cross of Shyri x Galena, multiple disease phenotype datasets, and a 99-marker linkage map, we determined the number, genome location, and effects of genes conferring resistance to these diseases. We also mapped Resistance Gene Analog Polymorphism (RGAP) loci, based on degenerate motifs of cloned disease resistance genes, in the same population. Leaf rust resistance was determined by a single gene on chromosome 1 (7H). QTLs on chromosomes 2 (2H), 3 (3H), 5 (1H), and 6 (6H) were the principal determinants of resistance to stripe rust. Two- locus QTL interactions were significant determinants of resistance to this disease. Resistance to the MAV and PAV serotypes of BYDV was determined by coincident QTLs on chromosomes 1 (7H), 4 (4H), and 5 (1H). QTL interactions were not significant for BYDV resistance. The associations of molecular markers with qualitative and quantitative disease resistance loci will be a useful information for marker-assisted selection.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s001220051519
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