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  • 1
    Electronic Resource
    Electronic Resource
    High thermal stability of photoluminescence in a disordered quantum wire superlattice (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6363-6366 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A randomly disordered quantum wire superlattice (d-QWR-SL) structure was fabricated by means of metalorganic vapor phase epitaxy. Photoluminescence (PL) and the carrier lifetime properties were investigated systematically. The PL intensity was found to be independent of temperatures below 170 K. This thermally stable feature was due to dramatic suppression of the nonradiative recombination in the wire region. The carrier lifetime measurement confirmed the high thermal PL stability in the d-QWR-SL structure. This high thermal PL stability may be due to the state localization in the d-QWR-SL structures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1416853
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  • 2
    Electronic Resource
    Electronic Resource
    Evidence of blocking effect on carrier trapping process by necking region in very narrow AlGaAs/GaAs V-grooved quantum wire structure (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5438-5440 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient band-gap renormalization (BGR) effects are investigated in AlGaAs/GaAs V-grooved quantum structures. The temperature-dependent transient BGR effects in the sidewall quantum well (SQWL) provide direct evidence of the existence of the blocking effect by the necking region barrier on the carrier trapping process. These effects provide a useful method to show the existence of the necking region, particularly for very thin SQWL structures. The temperature-dependent lifetimes of the SQWL and quantum wire (QWR) provide further proof of the carrier trapping process from the SQWL to the QWR. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1410317
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  • 3
    Electronic Resource
    Electronic Resource
    Temperature-dependent carrier trapping processes in short period quantum wire superlattices grown by flow rate modulation epitaxy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1481-1483 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first systematic investigation of the temperature-dependent carrier transferring processes of very short period V-grooved GaAs/AlGaAs quantum wire superlattice structures grown by flow rate-modulated metal-organic vapor phase epitaxy. The one monolayer (1 ML) fluctuation causes carrier confinement in sidewall (111) facet superlattice structures, and is shown to play an important role in the carrier transferring process. At low temperatures, the carrier transfer is blocked by the barriers of 1 ML fluctuation, while at high temperatures the carrier transfer from (111) superlattice to the wire region is shown to be very efficient after thermally overcoming the barriers. The temperature-dependent decay times of the different parts give direct evidence of the carrier transferring process, which demonstrates that the carriers can trap into the wire region within 50 ps at temperatures higher than 100 K. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290693
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  • 4
    Electronic Resource
    Electronic Resource
    Microstructures and Microwave Dielectric Characteristics of Ca(Zn1/3Nb2/3)O3 Complex Perovskite Ceramics (2004)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of the American Ceramic Society 87 (2004), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Ca(Zn1/3Nb2/3)O3 microwave dielectric ceramics were prepared using a solid-state reaction process, and their microwave dielectric properties were evaluated as functions of sintering and postdensification annealing conditions. The relationship between microwave dielectric properties and processing was interpreted through the variation of microstructures. The dielectric constant showed slight variation with sintering and annealing conditions, but the Q×f value increased at first and then decreased with increased sintering temperature, and annealing in oxygen indicated significant improvement in Q×f, especially for the specimens sintered at higher temperatures. The good microwave dielectric properties were obtained in the ceramics sintered at 1225°C in air for 3 h and annealed at 1100°C in oxygen for 8 h: ɛ= 34.1, Q×f= 15 890 GHz, τf=−48 ppm/°C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2004.tb07492.x
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  • 5
    Electronic Resource
    Electronic Resource
    Almost Sure Convergence of the Numerical Discretization of Stochastic Jump Diffusions (2000)
    Springer
    Acta applicandae mathematicae 62 (2000), S. 225-244 
    Details
    ISSN: 1572-9036
    Keywords: jump diffusion ; Stratonovich–Taylor expansion ; exponential Lie series ; Philip Hall basis ; shuffle product ; almost sure convergence
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics
    Notes: Abstract Based on the shuffle product expansion of exponential Lie series in terms of a Philip Hall basis for the stochastic differential equations of jump-diffusion type, we can establish Stratonovich–Taylor–Hall (STH) schemes. However, the STHr scheme converges only at order r in the mean-square sense. In order to have the almost sure Stratonovich–Taylor–Hall (ASTH) schemes, we have to include all the terms related to multiple Poissonian integrals as the moments of multiple Poissonian integrals always have lower orders of magnitudes as compared with those of multiple Brownian integrals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1006495115904
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