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  • 1
    Electronic Resource
    Electronic Resource
    Effects of high-temperature annealing on the dielectric function of Ta2O5 films observed by spectroscopic ellipsometry (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3012-3014 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Postdeposition annealing of high-k dielectric Ta2O5 films to eliminate contaminations can adversely cause the films to crystallize, which can be detrimental to their complementary metal–oxide–semiconductor device performances. In this letter, we will show that spectroscopic ellipsometry can be used to quickly and nondestructively detect such crystallization by identifying the two relatively sharp absorption peaks at 4.7 and 5.2 eV in the complex dielectric function of the films. Such peaks are absent in amorphous Ta2O5 films. In general, these sharp structures in the dielectric function are expected from the presence of long-range order in materials, which produces singularities in their interband density of states. Using this approach, we will show that Ta2O5 films become crystalline when annealed at or above 750 °C and remain amorphous below 700 °C. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1324730
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  • 2
    Electronic Resource
    Electronic Resource
    Spectroscopic ellipsometry characterization of high-k dielectric HfO2 thin films and the high-temperature annealing effects on their optical properties (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1249-1251 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of a set of high-k dielectric HfO2 films annealed at various high temperatures were determined by spectroscopic ellipsometry. The results show that the characteristics of the dielectric functions of these films are strongly affected by high temperature annealing. For a sample annealed at 600 °C, the film becomes polycrystalline, and its dielectric function displays a distinctive peak at 5.9 eV. On the other hand, the film remains amorphous without the 5.9 eV feature after 500 °C annealing. To model the dielectric functions, the Tauc–Lorentz dispersion was successfully adopted for these amorphous and polycrystalline films. The absorption edge was observed to shift to a higher energy at a high temperature annealing. Defects in the films were shown to relate to the appearance of a band tail above the absorption edge, and they appear to diminish with high temperature annealing. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1448384
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  • 3
    Electronic Resource
    Electronic Resource
    Reactivity and magnetism of Fe/InAs(100) interfaces (2002)
    Springer
    The European physical journal 28 (2002), S. 305-313 
    Details
    ISSN: 1434-6036
    Keywords: PACS. 61.10.Ht X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc. – 68.35.Fx Diffusion; interface formation – 75.70.Ak Magnetic properties of monolayers and thin films – 82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: Interface reaction and magnetism of epitaxially-grown Fe on InAs(100) are studied by core-level photoemission (As 3d and In 4d) and Fe 2p X-ray magnetic circular dichroism using synchrotron radiation. The reactivity of Fe/InAs(100) is relatively low compared to that of other interfaces involving deposition of 3d metals on III-V semiconductors. As a consequence, we observe a magnetic signal at Fe L2, 3 edges for the lowest thicknesses studied (1 ML). The atomic magnetic moment reaches a value close to that of the bulk α-Fe (2.2 μ B) for Fe coverages exceeding 5 ML. A ferromagnetic compound with approximate stoichiometry of FeAs is formed at the interface. The orbital magnetism represents between 12 and 20% of the total momentum, due to 3d density of states depletion and to crystal-field modification of the electronic levels. These properties make the Fe/InAs(100) interface very promising for spin-tunneling devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1140/epjb/e2002-00234-6
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