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  • 2000-2004  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    Defects, structure, and chemistry of InP–GaAs interfaces obtained by wafer bonding (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4135-4146 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have examined the crystallographic structure of GaAs/InP interfaces obtained by wafer fusion following different procedures. Plan-view and cross-sectional transmission electron microscopy reveal that the interface is not only composed of a regular array of two sets of edge dislocations and is more complex than generally supposed. If a twist is created due to misalignment of the two substrates, the dislocations are not edge dislocations but also have a screw component. Dislocations for which the Burgers vectors have a component normal to the interface are also present. Those dislocations probably result from steps and some of them accommodate the tilt between the two substrates. Inclusions and voids as well as a low number of volume dislocations are present in all the samples. The observed volume dislocation density near the interface lies in the 105–107 cm−2 range and these volume dislocations may be associated with thermal mismatch. The origin of all these defects is discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373042
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of strain and quantum confinement on the optical properties of InGaAs/GaAs V-groove quantum wires (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 141-147 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the impact of quantum confinement and strain effects on the optical properties of state-of-the-art, densely stacked, In0.15Ga0.85As/GaAs V-groove quantum wires. High uniformity and efficient carrier capture lead to narrow (6 meV) and intense emission from the wires. Large optical polarization anisotropy is obtained thanks to the combined effects of lateral quantum confinement and triaxial strain. Band filling in the fundamental subband occurs at a modest carrier density (∼9×105 cm−1), and is accompanied by a small spectral blueshift of the emission. Several sharp excitonic resonances associated with two dimensionally confined subbands of dominant heavy-hole character are observed in photoluminescence excitation spectroscopy, together with a remarkably small Stokes shift (3 meV). The subband separations (∼24 meV) are nearly independent of the wire thickness, as the nonuniform Indium composition across the structure is found to dominate the lateral confinement for thick wires. Such strained quantum wires are promising for the realization of advanced nanostructure devices. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373634
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  • 3
    Electronic Resource
    Electronic Resource
    Wide-range tuning of the two-dimensional confinement in V-groove quantum wires (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 274-276 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate how and to what extent the one-dimensional (1D) subband separation of V-groove GaAs/AlGaAs quantum wires (QWRs) can be tuned in a controlled way without compromising the wire uniformity and interface quality. Our results demonstrate that high quality V-groove QWRs with subbands separation up to ∼3kBTroom (ΔE=80 meV) can be obtained. The ratio between the subband separation and the inhomogeneous broadening of the QWRs emission line, extracted from low-temperature photoluminescence and photoluminescence excitation spectra, is as large as 7.1. Finally, we show that the 1D features in the optical spectra are maintained up to 300 K, making these QWRs suitable for room temperature device application. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1492847
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  • 4
    Electronic Resource
    Electronic Resource
    Efficient, narrow linewidth excitonic emission at room temperature from GaAs/AlGaAs V-groove quantum wire light-emitting diodes (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4-6 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on efficient, narrow linewidth exciton recombination in GaAs/AlGaAs V-groove quantum wire light-emitting diodes at room temperature. The high efficiency is due to a selective carrier injection mechanism resulting in an estimated internal quantum efficiency of ∼20% with an electroluminescence (EL) linewidth as narrow as 15 meV. The thermal broadening contribution to the linewidth is 6 meV due to exciton scattering with optical phonons. An analysis of the EL peak shift in a magnetic field points out the typical superlinear behavior of the excitonic binding energy for a quantum wire. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1380405
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  • 5
    Electronic Resource
    Electronic Resource
    Erratum: "Efficient, narrow linewidth excitonic emission at room temperature from GaAs/AlGaAs V-groove quantum wire light-emitting diodes" [Appl. Phys. Lett. 79, 4 (2001)] (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1402-1402 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1399035
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