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  • 2000-2004  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    Ions in holes: An experimental study of ion distributions inside surface features on radio-frequency-biased wafers in plasma etching discharges (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 716-723 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an experimental study of ion fluxes, energy distributions, and angular distributions inside surface features on radio frequency-biased wafers in high-density, inductively driven discharges in argon. Specifically, we present data on ion distributions at the bottom of 100-μm-square, 400-μm-deep "holes" in the wafer. Transmission of ions to the bottom of the holes increases with increasing ion energy and decreases as the sheath size becomes comparable to the hole size. Ion energy distributions at the bottom of the holes are narrower than distributions on the flat wafer surface. The flux of ions remains normal to the wafer surface over most of the hole area but the flux of ions within 6 μm of the wall is angled towards the wall. The observed trends are consistent with effects expected due to bowing of the plasma sheath around the surface features on the wafer. Scattering of ions off sidewalls contributes at most, only a small part of the ion flux reaching the bottom of the hole. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1486054
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries. Part I: GaAs, GaSb, and AlGaAs (2000)
    Springer
    Plasma chemistry and plasma processing 20 (2000), S. 405-415 
    Details
    ISSN: 1572-8986
    Keywords: ICP ; compound semiconductors ; interhalogens
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract High-density plasma etching of GaAs, GaSb, and AlGaAs was performed inICl/Ar and IBr/Ar chemistries using an Inductively Coupled Plasma (ICP)source. GaSb and AlGaAs showed maxima in their etch rates for both plamachemistries as a function of interhalogen percentage, while GaAs showedincreased etch rates with plasma composition in both chemistries. Etchrates of all materials increased substantially with increasing rf chuckpower, but rapidly decreased with chamber pressure. Selectivities 〉10 forGaAs and GaSb over AlGaAs were obtained in both chemistries. The etchedsurfaces of GaAs showed smooth morphology, which were somewhat better withICl/Ar than with IBr/Ar discharge. Auger Electron Spectroscopy analysisrevealed equirate of removal of group III and V components or thecorresponding etch products, maintaining the stoichiometry of the etchedsurface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1007000613045
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries. Part II: InP, InSb, InGaP, and InGaAs (2000)
    Springer
    Plasma chemistry and plasma processing 20 (2000), S. 417-427 
    Details
    ISSN: 1572-8986
    Keywords: ICP ; compound semiconductors ; interhalogens
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A parametric study of Inductively Coupled Plasma (ICP) etching of InP, InSb, InGaP, and InGaAs has been carried out in ICl/Ar and IBr/Ar chemistries. Etch rates in excess of 3.1 for InP, 3.6 for InSb, 2.3 for InGaP, and 2.2 μm/min for InGaAs were obtained in IBr/Ar plasmas. The ICP etching of In-based materials showed a general tendency: The etch rates increased substantially with increasing ICP source power and rf chuck power in both chemistries, while they decreased with increasing chamber pressure. The IBr/Ar chemistry typically showed higher etch rates than ICl/Ar, but the etched surface morphologies were fairly poor for both chemistries.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1007052629883
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    Paper (German National Licenses)
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