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  • 1
    Electronic Resource
    Electronic Resource
    Incorporation, Diffusion and Agglomeration of Carbon in Silicon (2001)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 82-84 (Nov. 2001), p. 189-194 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.82-84.189.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Interaction of Copper and Sulfur with Dislocations in GaAs (2001)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 78-79 (Apr. 2001), p. 331-340 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.78-79.331.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Study of multilayer structures with InAs nanoobjects in a silicon matrix (2000)
    Springer
    Semiconductors 34 (2000), S. 810-814 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract MBE-grown multilayer structures with InAs quantum dots embedded in a crystalline silicon matrix were studied by high resolution transmission electron microscopy. The properties of the grown structures depend critically on the substrate temperature, growth cycle sequence, and layer thicknesses. It is shown that the silicon matrix can “accommodate” only a limited volume of InAs in the form of coherent clusters about 3 nm in size. With an increasing amount of deposited InAs, large dislocated InAs clusters are formed during Si overgrowth, accumulating excess InAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1188079
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  • 4
    Electronic Resource
    Electronic Resource
    Determination of arsenic diffusion parameters by sulfur indiffusion in gallium arsenide (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7045-7050 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indiffusion profiles of sulfur in gallium arsenide were determined by secondary ion mass spectroscopy. In order to evaluate the shape of the profiles, a set of coupled reaction–diffusion equations was solved numerically. From the simulated nonequilibrium indiffusion profiles of sulfur, which diffuses into gallium arsenide via the kick-out mechanism, both the diffusion coefficient and the equilibrium concentration of arsenic self-interstitials were simultaneously determined. Transmission electron microscopy revealed that, due to an arsenic supersaturation, extrinsic dislocation loops have formed. The Fermi-level effect is more pronounced at lower diffusion temperatures and provides an additional driving force for the loop formation, agreeing well with the occurrence of larger faulted loops at a diffusion temperature of 950 °C rather than at 1100 °C. The complex behavior of the sulfur indiffusion can be quantitatively described by taking into account extended defects. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1325383
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  • 5
    Electronic Resource
    Electronic Resource
    Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2677-2679 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Si/InAs/Si heterostructure grown on (001) Si substrate by molecular beam epitaxy and annealed at 800 °C was investigated by high resolution transmission electron microscopy. Extensive interdiffusion leads to the formation of an InAs solid solution in the Si cap layer. Additionally, InAs-enriched regions with extensions of ∼6 nm, which exhibit two kinds of ordering are observed. The ordering of InAs molecules has occurred, respectively, in (101) and (101¯) planes inclined and (110) and (11¯0) planes parallel to the [001] growth direction. It is attributed to the energy gain from the reduced number of mixed Si–As and Si–In bonds. The sample show photoluminescence in the 1.3 μm region, which is tentatively attributed to the recombination of excitons localized in the ordered regions. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126441
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  • 6
    Electronic Resource
    Electronic Resource
    White cell count and intensive care unit outcome: rethinking the vocabulary (2004)
    Oxford, UK : Blackwell Science Ltd
    Anaesthesia 59 (2004), S. 0 
    Details
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2044.2004.03591.x
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  • 7
    Electronic Resource
    Electronic Resource
    Structures and phase transitions of B-Ta2O5 and Z-Ta2O5: two high-pressure forms of Ta2O5 (2000)
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 56 (2000), S. 659-665 
    Details
    ISSN: 1600-5740
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: A sample of Ta2O5, ditantalum pentaoxide, heat-treated in a `toroid'-type high-pressure chamber at P = 8 GPa and T = 1470 K, was studied by X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM). Two high-pressure modifications of Ta2O5, isostructural with B-Nb2O5 and Z-Nb2O5, were identified from the X-ray powder pattern. Both structures were refined by the Rietveld method from the X-ray diffraction data: B-Ta2O5, a = 12.7853 (4), b = 4.8537 (1), c = 5.5276 (2) Å, β = 104.264 (2)°, V = 332.45 Å3, Z = 4, space group C2/c; Z-Ta2O5, a = 5.2252 (1), b = 4.6991 (1), c = 5.8534 (1) Å, β = 108.200 (2)°, V = 136.53 Å3, Z = 2, space group C2. The Z-Ta2O5 modification is new. The Ta atoms are six-coordinated in B-Ta2O5 and seven-coordinated in Z-Ta2O5. The two structures are closely related, which makes an intergrowth and a transformation between them possible. An idealized model of the intergrowth structure has been given. The HRTEM study showed defect-rich B-Ta2O5 crystals, which could be interpreted as an intergrowth between the B-Ta2O5 and Z-Ta2O5 phases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108768100005462
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  • 8
    Electronic Resource
    Electronic Resource
    Phenylacetylene as a new surrogate standard for the determination of BTEX by GC/FID (2000)
    Springer
    Fresenius' journal of analytical chemistry 368 (2000), S. 424-425 
    Details
    ISSN: 1432-1130
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Benzene, toluene, ethylbenzene, xylene (short form: BTEX) and other monoaromatic compounds are environmental contaminants which are often analyzed by GC/FID. For the calculation of BTEX concentrations in water samples normally external quantification with defined BTEX solutions is sufficient. However, for accurate quantification of BTEX in complex matrices it is necessary to use internal standards, e.g. ¶1-chlorohexane. Isotopes of BTEX are usually the best alternative but they are only applicable to GC/MS, because their retention times are similar to the original BTEX. 1-Chlorohexane and phenylacetylene were compared with respect to their quality as internal standards. Good results were obtained with ¶the monoaromatic phenylacetylene as a surrogate standard. The physical properties of phenylacetylene are very similar to BTEX species and it normally does not occur in environmental samples. 1-Chlorohexane was more strongly adsorbed on the used soil than BTEX during sample preparation. This fact suggests that the single aromatic rings of BTEX and phenylacetylene are mainly responsible for the adsorption behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002160000479
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  • 9
    Electronic Resource
    Electronic Resource
    High-Spatial-Resolution Low-Energy Electron Beam X-Ray Microanalysis (2000)
    Springer
    Microchimica acta 132 (2000), S. 113-128 
    Details
    ISSN: 1436-5073
    Keywords: Key words: SEM; low voltage; spatial resolution; X-ray microanalysis.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract.  Performing X-ray microanalysis at beam energies lower than those conventionally used (〈 10 keV) is known to significantly improve the spatial resolution for compositional analysis. However, the reduction in the beam energy which reduces the X-ray interaction diameter also introduces analytical difficulties and constraints which can diminish the overall analytical performance. This paper critically assesses the capabilities and limitations of performing low beam energy, high spatial resolution X-ray microanalysis. The actual improvement in the spatial resolution and the reduction in the X-ray yield are explored as the beam energy is reduced. The consequences for spectral interpretation, quantitative analysis and imaging due to the lower X-ray yield and the increased occurrence of X-ray line overlaps are discussed in the context of currently available instrumentation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s006040050052
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  • 10
    Electronic Resource
    Electronic Resource
    Heat Shock Response is Associated with Protection Against Acute Interstitial Pancreatitis in Rats (2000)
    Springer
    Digestive diseases and sciences 45 (2000), S. 2252-2264 
    Details
    ISSN: 1573-2568
    Keywords: cerulein pancreatitis ; dibutyltin dichloride ; cytoprotection ; heat shock protein ; hyperthermia ; transforming growth factor-β1
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract We recently reported that hyperthermia induces pancreatic expression of heat shock proteins (HSPs), particularly HSP70 isoforms, and protects against cerulein pancreatitis. We have now studied whether a double hyperthermia amplifies these effects and whether hyperthermia also protects against dibutyltin dichloride (DBTC)-induced pancreatitis. A further aim was to examine whether hyperthermia induces changes in transforming growth factor-β1 (TGF-β1). Following pretreatment without or with a single or double hyperthermia, pancreatitis was induced by application of cerulein or DBTC. Pancreatic HSP and TGF-β1 expression were studied by immunoblotting. Pancreas injury was assessed by light microscopy and serum pancreatic enzyme activity. Hyperthermia as well as DBTC induced HSP72, whereas cerulein did not. A double hyperthermia led to a further increase in HSP72 compared to a single heat stress. In both models, hyperthermia significantly reduced pancreatic injury. Although a double hyperthermia slightly decreased the severity of cerulein pancreatitis compared to a single heat treatment, an improved pancreas protection against DBTC cytotoxicity was not achieved. We also found that hyperthermia induces the expression of TGF-β1. In conclusion, hyperthermia preconditioning exerts protective effects against two pathophysiologically different types of pancreatitis by a mechanism that involves the up-regulation of HSP70 isoforms as well as TGF-β1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1026459001195
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