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  • 1
    Electronic Resource
    Electronic Resource
    Formation of MnSb during the growth of MnSi layers in the presence of an Sb flux (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4932-4935 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural and compositional analyses of a MnSi layer have been performed to elucidate the growth mechanism. The MnSi layer was grown by reactive deposition epitaxy in the presence of an Sb flux. The existence of Sb was found at the MnSi/Si interface and on the surface of MnSi layer by secondary ion mass spectrometry. In addition, x-ray photoelectron spectroscopy measurement shows that MnSb is formed on the surface of the grown MnSi layer. On the atomic scale, scanning transmission electron microscopy observations reveal the existence of an Sb–Mn–Sb structure at the interface between the MnSi layer and the Si substrate. The formation of the MnSb plays an important role for the improvement of crystalline quality of the silicide layer, acting both as a surfactant and as a compliant substrate for stress relief. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1461063
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  • 2
    Electronic Resource
    Electronic Resource
    Low resistance magnetic tunnel junctions and their interface structures (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7558-7560 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of interface structure and oxidation state were studied in stacked magnetic tunnel junction (MTJ) structures with top and bottom antiferromagnetic layers to obtain optimum resistance and high tunneling magnetoresistance (TMR) ratios for read heads. The roughness of the NiFe surface and the Al coverage were significantly improved by introduction of O2 surfactant gas on the Ta-seed-layer surface, which increased TMR ratios of the MTJ with low resistance area (RA) products of less than 10 Ω μm2. Furthermore, it was found that avoidance of Ni oxidation and Co oxidation at the tunnel barrier interface is essential to obtaining high TMR ratios, and that a good Al coverage and Fe–oxide formation may enhance TMR ratios when Fe-rich magnetic materials are used. For the top-type and bottom-type structures, a TMR ratio of 12%–17% with RA products of 6–7 Ω μm2 was obtained, which provides sufficient performance for read heads. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1361054
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  • 3
    Electronic Resource
    Electronic Resource
    Interface structures and magnetoresistance in magnetic tunnel junctions (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5807-5809 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interface structures of magnetic tunnel junctions were studied using x-ray photoelectron spectroscopy (XPS). The structures were correlated with magnetoresistance (MR) characteristics. For MR measurements, Fe(50 nm)/AlOx/CoFe(30 nm) junctions with an in situ naturally oxidized Al tunnel barrier were fabricated. The thickness of the Al layer, an important parameter in MR characteristics, was varied from 0 to 5 nm. MR curves showed that the largest MR ratio occurred when the Al layers were 2–3 nm in thickness. XPS analysis showed that an Al layer greater than 1 nm thick covers the entire surface of the Fe underlayer. However, if the Al layer is more than 1 nm thick, the unoxidized Al remaining after the oxidation process increases as the thickness is increased. For Al layers that are greater than 3 nm thick, the MR ratio is strongly affected by unoxidized Al, probably due to the decrease in spin polarization at the surface of an Fe/Al electrode. On the other hand, the hysteresis loops indicate that the difference in coercive force between Fe and CoFe layers reduces with decreasing Al thickness for Al layers less than 2.5 nm thick. This means that the antiparallel direction of magnetization in the two layers becomes incomplete due to the gradual increase of the ferromagnetic coupling between them. As a result, the MR ratio decreases, although a 1-nm-thick Al layer seems to be enough to cover the Fe surface. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369926
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  • 4
    Electronic Resource
    Electronic Resource
    Exchange-biased magnetic tunnel junctions fabricated with in situ natural oxidation (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5261-5263 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Exchange-biased magnetic tunnel junctions with a Ta/NiFe/FeMn/NiFe/Al–oxide/NiFe/Ta structure have been fabricated. The tunnel barrier was formed by the in situ natural oxidation of an Al metal layer under controlled oxygen pressure. Photolithography and ion milling were used to pattern the multilayer into junction structures of 2×2 μm2–20×20 μm2 dimensions. Magnetoresistance (MR) curves show spin-valve-like characteristics, in which an antiparallel configuration of magnetizations in both ferromagnetic layers is observed between 50 and 240 Oe, and the hysteresis loops for both the free and pinned layers exhibit sufficient separation. An evaluation of the MR curves shows the exchange-bias field to be 340 Oe and coercivity levels in the free layer to become as low as 13 Oe. At room temperature normalized junction resistance is 2×10−5 Ω cm2, with MR ratios still being maintained at 13%. This resistance value is much lower than previously reported values for junctions produced either with plasma oxidation or thermal oxidation in air. Maximum variation in junction resistance is only ±5% for 10×10 μm2 junctions over a 2 in. wafer. The MR ratio decreases by half when the bias voltage is raised from 0 to 440 mV, approximately the same ratio of decrease as has been previously reported for other successful junctions. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369960
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  • 5
    Electronic Resource
    Electronic Resource
    Near-field photoluminescence study of GaNAs alloy epilayer at room and cryogenic temperature (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1508-1510 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the spatial distribution of the optical properties of a GaNAs (N∼0.8%) epilayer to investigate the carrier recombination mechanism at both room temperature and cryogenic temperature using a near-field scanning optical microscope. A difference between the macro and near-field photoluminescence (PL) spectra at room temperature was not observed. At low temperature, we found spatial inhomogeneity of the optical properties and sharp features in the near-field PL spectrum. These findings indicate that the dominant emission mechanism changes from recombination of delocalized carriers at room temperature to recombination of localized carriers (excitons) trapped in the local potential minimum due to compositional fluctuation at low temperature. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1353815
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  • 6
    Electronic Resource
    Electronic Resource
    Reduced magnetoresistance in magnetic tunnel junctions caused by geometrical artifacts (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3060-3062 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spuriously reduced magnetoresistance (MR) ratios have been observed in magnetic tunnel junctions in which a square contact portion with dimensions smaller than the width of the lead electrodes connects both the top and bottom lead electrodes. The phenomenon becomes apparent by measuring the magnetoresistance of the junctions with various sizes systematically varied under a fixed line width of the electrodes. Observed junction size dependence of resistance (R)×area(A) products and MR ratios were analyzed through finite difference calculation, and it was found that there exist junction sizes for which R×A products and MR ratios are larger and smaller, respectively, than the intrinsic ones. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1323740
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  • 7
    Electronic Resource
    Electronic Resource
    Near-field optical fiber probe optimized for illumination–collection hybrid mode operation (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2773-2775 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of a near-field probe was optimized for illumination-collection hybrid mode (I–C mode) operation. We developed a highly sensitive probe with a sharp-edged aperture and a double-tapered structure fabricated by a chemical etching technique. Through measurement of the photoluminescence (PL, λ=1 μm) image of single quantum dots, the performance of many versions of the probe with different aperture diameters, ranging from 80 to 500 nm, was systematically evaluated. In addition to the throughput and spatial resolution, the absolute value of the PL collection efficiency of the probe in (I–C mode) was also estimated for the first time. A collection efficiency several times greater than that of an objective lens with a numerical aperture of 0.8 was achieved with high spatial resolution in the 130–200 nm (λ/8–λ/5) range. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123307
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  • 8
    Electronic Resource
    Electronic Resource
    Room-temperature photoluminescence spectroscopy of self-assembled In0.5Ga0.5As single quantum dots by using highly sensitive near-field scanning optical microscope (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 73-75 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the optical properties of self-assembled In0.5Ga0.5As single quantum dots (QDs) at room temperature with a near-field scanning optical microscope. Successful detection of a weak photoluminescence (PL) signal from a single QD at room temperature could be achieved by using a double-tapered fiber probe having the advantages of both high collection efficiency and high spatial resolution. Through the precise examination of PL spectra of many QDs, including broadening and saturation behaviors, the homogeneous linewidth of the ground state emission is evaluated as from 9.8 to 14.5 meV. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125660
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  • 9
    Electronic Resource
    Electronic Resource
    ALTERATION IN THE RELEASE OF ENDOTHELIUM-DERIVED RELAXING FACTORS BY α-ADRENOCEPTOR STIMULATION IN THE AORTA OF STROKE-PRONE SPONTANEOUSLY HYPERTENSIVE RATS (1995)
    Oxford, UK : Blackwell Publishing Ltd
    Clinical and experimental pharmacology and physiology 22 (1995), S. 0 
    Details
    ISSN: 1440-1681
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: 1. Endothelium-dependent relaxation by a-adrenoceptor agonists was examined in the thoracic aorta from normoten-sive Wistar-Kyoto (WKY) rats and stroke-prone spontaneously hypertensive rats (SHRSP).2. In ring preparations from both strains, noradrenaline-induced contraction was increased by L-nitro arginine (L-NNA), a NO synthesis inhibitor.3. L-NNA increased the contraction induced by phenyl-ephrine, an α1-adrenoceptor agonist. UK-14304 and clonidine, α2-adrenoceptor agonists, did not contract the preparations with intact endothelium. However, these agents contracted preparations when NO synthesis was inhibited.4. In a precontracted preparation, clonidine and UK-14304 induced relaxations. The relaxations in SHRSP aorta were smaller than those in WKY aorta.5. These results indicate that a-agonists release NO from endothelium in WKY and SHRSP aorta. The mechanism related to NO release by α2-adrenoceptor agonist is impaired in SHRSP aorta.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1440-1681.1995.tb02856.x
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  • 10
    Electronic Resource
    Electronic Resource
    Oxidative Stability, Structure, and Physical Characteristics of Microcapsules Formed by Spray Drying of Fish Oil with Protein and Dextrin Wall Materials (2003)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 68 (2003), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: : Maltodextrins and a highly branched cyclic dextrin (HBCD) were tested for their ability to serve as wall materials for microcapsules with proteins. HBCD or a maltodextrin of DE18 with sodium caseinate (SC) improved the oxidative stability of encapsulated fish oil; however, the DE18/SC wall system had 2 disadvantages: browning induced by the Maillard reaction and agglomeration. The oil load level and the selection of dextrin strongly affected the outer topography and the inner structure, as well as the ratio of the oil to dextrin on the surface of the microcapsules. It is stated that drying speeds of dextrin and oil load levels were shown to be likely related to the structural difference in the microcapsules.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.2003.tb05755.x
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