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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 185-188 (Mar. 1995), p. 809-818 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 185-188 (Mar. 1995), p. 789-798 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 185-188 (Mar. 1995), p. 779-788 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2630-2632 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN-rich side of GaNP and GaNAs layers is grown at 750 °C by gas-source molecular beam epitaxy. Phase separation is observed for the layers with P and As composition of over 1.5% and 1%, respectively. Photoluminescence (PL) spectra for the non-phase-separated GaNP (P composition: 0.37%) and GaNAs (As composition: 0.26%) show redshift of 50 and 40 meV, respectively, from that of GaN, and exhibit Stokes shift of about 80 meV which is smaller than that of GaN (100 meV). On the other hand, the PL spectrum for the phase-separated GaNP shows a large redshift peaking at 2.101 eV. This peak is considered to be an emission from the phase-separated GaP-rich GaPN region. PL excitation spectrum shows two large broad peaks. One at 2.982 eV corresponds to the absorption at the Γ point of GaP-rich region, and the other at 2.308 eV corresponds to the absorption at the isoelectronic band edge of GaP-rich GaPN alloy originated from the X point of GaP. In the case of phase-separated GaNAs, no PL is observed, suggesting that the optical properties are much more sensitive to crystalline quality in GaAs-rich GaAsN than in GaP-rich GaPN. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1952-1958 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metalorganic molecular beam epitaxy (MOMBE) growth characteristics of GaAs using triethylgallium (TEGa) and trisdimethylaminoarsenic (TDMAAs) are studied in detail by using reflection high energy electron diffraction intensity oscillations. It is found that the GaAs growth rate variation with substrate temperature (Tsub) is similar to that in the MOMBE growth of GaAs with TEGa and elemental As (As4) except in the high Tsub region, despite the use of uncracked TDMAAs instead of As4. GaAs growth starts at about 350 °C and shows a maximum growth rate at about 500 °C. However, the absolute growth rate is about 15% lower than that using As4 with the same TEGa flow rate in the mass-transport limited growth region. Above 600 °C the growth rate shows a rapid decrease with increasing Tsub. Further, it is found that etching of GaAs occurs when only TDMAAs is supplied to the GaAs surface at Tsub above 500 °C. Unintentionally doped GaAs films show n-type conduction in the whole Tsub range investigated with the highest 77 K electron mobility of 22 000 cm2/V s and a low carrier concentration of 2×1015 cm−3 for the 650 °C grown samples. 4.2 K photoluminescence spectra show an exciton-bound-to-impurity emission peak at the wavelength of 819.3 nm with a full width at half-maximum of less than 3.5 meV indicating good optical qualities. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2849-2851 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline GaN layers were grown on W, Mo, Ta, and Nb metal substrates by gas-source molecular-beam epitaxy using an ion-removal, electron-cyclotron-resonance radical cell. X-ray diffraction rocking curves showed preferential GaN(0002) or GaN(10–11) orientations. The grain sizes ranged from 100 to 800 nm. Strong photoluminescence (PL) emission without yellow luminescence was observed from these polycrystalline GaN layers. At 77 K, PL peaks at 3.46 and 3.26 eV were observed, and their temperature dependence fit a simple relation based on the number of phonons. The higher-energy peak probably was due to the free excitonic transition in hexagonal GaN. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2148-2150 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: TlInGaAs/InP double heterostructures (DHs) were grown on (100) InP substrates by gas-source molecular-beam epitaxy. Almost no occurrence of Tl interdiffusion at the InP/TlInGaAs heterointerface was confirmed. The photoluminescence (PL) intensity for the DH was approximately ten times stronger than that of the single heterostructure. The PL peak energy and its variation with temperature for the TlInGaAs/InP DH decreased with increasing Tl composition. For the DH with a Tl composition of 13%, the PL peak energy varied only slightly with temperature (0.03 meV/K). This value corresponds to a wavelength variation of 0.04 nm/K and is much smaller than that of the lasing wavelength of InGaAsP/InP distributed feedback laser diodes (0.1 nm/K). © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Colloid & polymer science 276 (1998), S. 373-378 
    ISSN: 1435-1536
    Keywords: Key words Dielectric dispersion ; polystyrene microcapsule ; scanning dielectric microscope ; interfacial polarization ; dielectric imaging
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract  A dielectric imaging technique with a scanning dielectric microscope was applied to polystyrene microcapsules in an aqueous environment to study the electrical properties of individual ones. The dielectric images obtained over a frequency range from 10 kHz to 10 MHz showed frequency dependence, which indicated dielectric dispersion (or relaxation) due to interfacial polarization or the build up of charge on the boundaries between the microcapsule shell and the aqueous phases. The dielectric dispersion was analyzed based on an equivalent electrical circuit model and a shell-sphere model in which a spherical core is covered with an insulating shell.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Colloid & polymer science 273 (1995), S. 1095-1097 
    ISSN: 1435-1536
    Keywords: Dielectric relaxation ; scanning dielectric microscope ; interfacial polarization ; biological cell
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A dielectric technique that can image local permittivity and conductivity has been applied to living biological cells in an aqueous environment. The local permittivity and conductivity were measured between 10 kHz and 10 MHz with a fine probe electrode, which was laterally scanned over cells on a plate electrode. The dielectric images of the cells depended on frequency, indicating dielectric relaxation that is due to interfacial polarization. The low-frequency image (at ∼10 KHz) in which the cells have high permittivity and low conductivity compared with the medium results from the presence of the plasma membrane with high resistivity. The dielectric image of the cell interior is obtainable at high frequencies (∼10 MHz), where the plasma membrane is short-circuited.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1572-8838
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Notes: Abstract Active electrode materials for a new zinc electrowinning process, in which the thermodynamic cell voltage is about half that of the conventional process by replacing oxygen evolution by anodic oxidation of SO2 produced in the zinc smelting process have been studied. Immersion in HF solution and subsequent cyclic voltammetry (CV) in sulfuric acid are known to be effective surface activation treatments of the amorphous alloy electrodes. The galvanostatic cathodic reduction (CR) treatment was applied to obtain further activation for sulfite oxidation for HF- and CV-treated electrodes prepared from amorphous nickel-valve metal-platinum group metal alloys. This treatment has been found to be effective in enhancing the activity. Among the amorphous Ni-40Nb alloys containing platinum group elements, the platinum-containing electrode showed the highest catalytic activity, which was higher than that of platinized platinum. Furthermore, the electrocatalytic activities of CR-treated electrodes prepared from amorphous alloys containing platinum and rhodium, and platinum and ruthenium were higher than that of the electrode containing only platinum. According to XPS analysis of the amorphous Ni-40Nb-1Pt-1Ru alloy specimen the enrichment of platinum and ruthenium occurred by CV treatment, and a small amount of oxidized platinum and ruthenium species remained on the electrode surfaces, but most of them were cathodically reduced to the metallic state by CR treatment. High catalytic activities for sulfite oxidation can be attributed to the metallic state of platinum and ruthenium contained in the alloy electrodes, even though the activity of these electrocatalysts is higher than that of pure Pt or Ru.
    Type of Medium: Electronic Resource
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