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  • 1
    Electronic Resource
    Electronic Resource
    Automatic Drive for Countercurrent Distribution Apparatus (1954)
    s.l. : American Chemical Society
    Analytical chemistry 26 (1954), S. 498-502 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60087a021
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  • 2
    Electronic Resource
    Electronic Resource
    Deposition of epitaxially oriented films of cubic silicon carbide on silicon by laser ablation: Microstructure of the silicon–silicon- carbide interface (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6601-6608 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excimer laser ablation has been used to deposit epitaxial films of β-SiC on single-crystal Si wafers, in a vacuum, at substrate temperatures between 1050 and 1250 °C. Such films can be grown by ablating ceramic SiC, carbon, or alternating silicon and carbon targets at a range of growth rates. X-ray θ-2θ diffraction shows the presence of strong, sharp reflections from crystal planes parallel to the substrate, 200 and 400 for [100] substrates and 111 and 222 for [111] oriented substrates. Wrong reflections, such as 111 for [100] substrates, are extremely weak or absent, indicating alignment with the substrates. The characterization of these films by a number of techniques is discussed. In all cases the film-substrate interface shows a characteristic microstructure of cavities in the Si substrate, similar to that observed for the carbonization layer initially formed as a precursor for chemical-vapor deposition of SiC films on Si. This implies that the initial film growth, for all cases, involves chemical reaction of the Si substrate with the carbon in the plume as well as transport through the growing film. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359070
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  • 3
    Electronic Resource
    Electronic Resource
    Correction: Identification of Surface Functional Groups on Active Carbon by Infrared Internal Reflections Spectrometry. (1969)
    s.l. : American Chemical Society
    Analytical chemistry 41 (1969), S. 765-765 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60275a048
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  • 4
    Electronic Resource
    Electronic Resource
    Optical study of silicon-containing amorphous hydrogenated carbon (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2820-2825 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon-containing amorphous hydrogenated carbon films deposited by a plasma-enhanced chemical vapor deposition process were studied using both Raman and ellipsometry spectroscopies. Analyses of the experimental data from both these techniques yielded valuable information about the microstructure of the films. The silicon incorporation in amorphous hydrogenated carbon breaks down large size sp2 carbon clusters and enhances sp3 bonding. The reduction of large sp2 graphitic defects, the enhancement of sp3 bonding, and the associated microstructure changes are responsible for the desired properties of silicon-containing amorphous hydrogenated carbon. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367042
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  • 5
    Electronic Resource
    Electronic Resource
    Microstructural development and optical properties of epitaxial Ge1−xCx alloys on Si(100) (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2572-2574 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the microstructural development and optical properties of epitaxial Ge1−xCx alloys (0〈x〈0.1) grown on Si(100) by low-temperature (200 °C) molecular-beam epitaxy. Films with C concentrations below 2%–3% grow in 2D layers, while films with C higher than 5% form 3D islands after initial layer growth. X-ray-diffraction indicates that less than 1% C may have been substitutionally incorporated. Spectroscopic ellipsometry measurements of the films' optical constants show small systematic changes with increasing C concentration. These changes occur primarily near 2 eV, the E1 critical point in Ge. No new features attributable to Ge–C vibrational modes could be identified using Raman spectroscopy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117703
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  • 6
    Electronic Resource
    Electronic Resource
    Ion-channeling study of the SiC/Si/SiO2/Si interface (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3501-3503 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion channeling has been used in a detailed study of 3C–SiC films grown by chemical vapor deposition on a Si/SiO2/Si substrate. For a 160-nm-thick 〈100〉-oriented SiC film, the results show a minimum yield (χmin) of ∼28% at the SiC–Si interface, while a SiC film with a thickness of ∼2.4 μm, grown under identical conditions, was almost defect free (χmin=5.3%) in the surface region. Angular scans around the 〈110〉 axis revealed the existence of a superlattice structure at the SiC–Si interface. The strain-induced angular shift was determined to be 0.16°±0.05°, indicating a kink between the SiC and Si layers along the inclined 〈110〉 axis. A modified model is suggested to interpret the experimental observations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124143
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  • 7
    Electronic Resource
    Electronic Resource
    The Ge–C local mode in epitaxial GeC and Ge-rich GeSiC alloys (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 626-628 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Raman signature of the local Ge–C mode for substitutional C is identified as a narrow line (8 cm−1 full width at half maximum) near 530 cm−1 in alloy films of Ge1−yCy (0≤y≤0.07) grown on Ge (100) substrates by low-temperature (200 °C) molecular beam epitaxy. The intensity of the Ge–C line relative to the c-Ge line suggests that only a small fraction of the nominal C is in substitutional sites. In ternary alloys of Ge1−x−ySixCy with x=0.1 and 0.2 and y=0.03, the Ge–C mode disappears, suggesting a strong bias towards C bonding with Si as opposed to Ge. In Ge1−xSnx films the Ge–Sn mode is seen at 263 cm−1. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121877
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  • 8
    Electronic Resource
    Electronic Resource
    Determining magnetic anisotropies from hysteresis loops (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 520-522 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel method for determining magnetic anisotropies from hysteresis loops is presented. While sweeping the loop, a magnetic field is applied perpendicularly to the sweep-field axis. This causes the magnetization to rotate reversibly in a wide field range and still reach saturation at finite fields. An example is given whereby surface and volume anisotropies are determined from magneto-optical Kerr effect loops in Co films grown on stepped Cu(001). © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118316
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  • 9
    Electronic Resource
    Electronic Resource
    Combining different linkage maps in sugar beet (Beta vulgaris L.) to make one map (1997)
    Oxford, UK : Blackwell Publishing Ltd
    Plant breeding 116 (1997), S. 0 
    Details
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Several genetic maps for sugar beet (Beta vulgaris L.), from different German research groups, have been published and it is now possible to consider combining them with the aid of the common markers. The computer program JOINMAP (versions 1.3 and 2.0) was used for pair-wise combination of three populations. Several problems arose: the genetic background of the populations, different population structures (F2 versus F1× F1), different number of polymorphic loci for common probes in the populations to be combined, different estimates of the recombination rates between the same markers and differences between the JoinMap versions. The maps from two F2 populations could be integrated into a single map, but it was more appropriate to construct separate maps for the F2 populations and the F1× F1 population using common markers as reference points only.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1439-0523.1997.tb00971.x
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  • 10
    Electronic Resource
    Electronic Resource
    Combined linkage maps and QTLs in sugar beet (Beta vulgaris L.) from different populations (1999)
    Oxford, UK : Blackwell Publishing Ltd
    Plant breeding 118 (1999), S. 0 
    Details
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: The construction of genetic maps is an expensive and time-consuming process. The breeder is therefore interested in using maps developed from other mapping populations but this is only possible if the genetic structure is similar for the chromosomal regions of interest. In this paper, maps of three populations of sugar beet (Beta vulgaris L.) with common polymorphic marker loci are compared. Maps were constructed with MAPMAKER 3.0 and JOINMAP 2.0. Both mapping programs gave, in general, the same order for common markers. However, the number of common markers was too low to construct a combined map for all chromosomes. For one population, in contrast to the other two, the map constructed with MAPMAKER 3.0 was much longer than that constructed with JOINMAP 2.0.For two of these populations yield traits were also available from different environments. For quantitative trait loci (QTL) analysis of the yield data, the packages MAPMAKER/QTL 1.1 and PLABQTL were used. No QTL common for the two populations could be detected. The program and the version used strongly influenced the estimated positions of QTLs. There was also a strong interaction with environments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1439-0523.1999.tb01513.x
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