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  • 1995-1999  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    Strain-induced effects in (111)-oriented InAsP/InP, InGaAs/InP, and InGaAs/InAlAs quantum wells on InP substrates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5747-5750 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strain-induced effects in quantum wells of InAsxP1−x/InP, InxGa1−xAs/InP, and InxGa1−xAs/ In0.52Al0.48As on (111) InP substrates are investigated. The strain induces a large piezoelectric field in these structures, and causes a large change in their energy band edges. Consequently the band structure of the quantum wells is dramatically modified, and the dependence of interband transition energies on alloy composition is different from that of quantum wells on (100) substrates. Moreover, a larger critical layer thickness is found for the quantum wells studied. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359219
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Further evidence for the quantum confined electrochemistry model of the formation mechanism of p−-type porous silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3399-3401 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two types of p− porous silicon (PS) were formed in HF solutions of different concentrations. One type with nanoscale (NS) dimensions of about 3 nm and the other with dimensions of about 5 nm. PS samples formed in the lower concentration of HF were anodized again in the higher concentration of HF and vice versa. The photoluminescence peak position and, thus, the size of NS units of PS were found to be related to the concentration of HF in which the PS is formed, independent of the forming time. The larger NS units of PS can be further electrochemically etched by anodization, while the smaller ones cannot. These results give a confirming evidence for the quantum confined electrochemistry model of the formation mechanism of PS based on the quantum confinement effect and classical electrochemical theory [S. L. Zhang, K. S. Ho, Y. T. Hou, B. D. Qian, P. Diao, and S. M. Cai, Appl. Phys. Lett. 62, 642 (1993)]. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117272
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    On the formation and nature of nanometer size clusters on the surface of ZnSe epilayers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3857-3859 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe epilayers were grown on GaAs (001) substrates by metal organic chemical vapor phase deposition, using different group VI–II precursor flow ratios. Atomic force microscopy (AFM) examinations of their surface show that epilayers grown with a high VI/II ratio are not as stable as those grown with a low ratio. When exposed to air, Se clusters would appear and grow on the surface of the unstable epilayers. The ripening process could take as long as 50 days at room temperature. Secondary electron and cathodoluminescence images indicate that the clusters are more likely to emerge from areas of high defect density. Moreover, AFM topographic images of epilayers at an intermediate stage of ripening suggest that clusters near surface depressions would grow in size at the expense of others. By using a low accelerating voltage and allowing the clusters to grow to a size larger than the electron interaction volume, we used energy dispersive x-ray analysis to show that the clusters are made up entirely of Se. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124203
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  • 4
    Electronic Resource
    Electronic Resource
    Depth-resolved cathodoluminescence study of ZnxCd1−xSe epilayer grown on (001) InP by metal organic chemical vapor phase deposition (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3238-3240 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical properties of zincblende structured ZnxCd1−xSe epilayer grown on InP by metal organic chemical vapor phase deposition at temperatures of 360, 400, and 440 °C are investigated with low temperature cathodoluminescence spectroscopy (CL). Both near band gap and deep level emissions are found for the samples grown at 400 °C and above, but deep level emissions are absent for the sample grown at 360 °C. We conclude that the growth temperature should be kept below the temperature at which InP begins to decompose and diffusion of III–V constituents into the epilayer occurs. Evidence of this diffusion comes from an analysis of depth resolved CL studies, which shows that the deep level emissions occur mainly at the epilayer/substrate interface. By monitoring the ratio of the intensity of the deep level emissions to that of the near band emissions, we find that this ratio is larger for samples grown at high temperatures than those at low temperatures. Indium diffusion from the substrate into the epilayer is most likely the source of these deep levels. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122730
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