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  • 1
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 3493-3509 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Photoelectron spectra have been measured for the anions X−(CO2), with X=I, Br, Cl, and F. The vibrationally resolved spectra show that I−(CO2), Br−(CO2), and Cl−(CO2) are primarily electrostatically bound clusters, although the charge-quadrupole interaction is strong enough to distort the CO2 molecule by as much as 10° [in Cl−(CO2)]. Ab initio calculations and electrostatic models are used to describe the geometry and bonding of these clusters. The photoelectron spectrum of FCO−2 is qualitatively different and shows transitions to both the X˜ 2B2 ground and the A˜ 2A2 first excited electronic states of the covalently bound FCO2 radical. The previously unobserved A˜ 2A2 state is measured to lie 0.579 eV above the ground state. Vibrational frequencies are assigned with the assistance of ab initio calculations. The FCO2 heat of formation is determined to be ΔfH0298(FCO2)=−85.2±2.8 kcal/mol. While both FCO−2 and FCO2 are more strongly bound than the other halide–CO2 clusters, the C–F bonds are very weak relative to C–F bonds found in other halocarbon compounds. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 3510-3518 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Photoelectron spectra of the I−(CO2)n=1–13, I−(N2O)n=1–12, and Br−(CO2)n=1–11 clusters are presented. The spectra provide information about the stepwise solvation of the bromide and iodide anions and about the size of the first solvation shells in these clusters. The data suggest that significantly different solute–solvent interactions exist in the three sets of clusters studied here. The X−(CO2)n spectra exhibit resolved progressions which are assigned to in-phase CO2 solvent bending vibrations in the neutral clusters. These vibrations are excited by photodetachment of anion clusters in which the CO2 molecules are distorted from linearity by a charge-quadrupole interaction. The I−(N2O)n spectra do not show any vibrational structure, presumably because the weaker ion–solvent interactions are insufficient to distort the N2O molecules. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4459-4461 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and electrical properties of titanium dioxide (TiO2) thin films grown on n-type InP(100) substrate by low-pressure metal-organic chemical-vapor deposition have been studied with postannealing. The thin films of TiO2 were deposited at a low temperature of 350 °C using titanium isopropoxide and oxygen. After a postgrowth annealing by the rapid thermal annealing method at a temperature of 850 °C for 15 s, the TiO2/InP structure of only the anatase phase with (101) and (200) peaks was observed by x-ray diffraction analysis. No interface reaction between TiO2 and InP was detected by Auger electron spectroscopy depth profiling. From capacitance–voltage measurement of the Al/TiO2/n-InP structure, the interface density of states at midgap energy and the dielectric constant were approximately low 1012 eV−1 cm−2 at midgap energy and about 50, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    European journal of neuroscience 11 (1999), S. 0 
    ISSN: 1460-9568
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Evidence has accumulated that Zn2+ plays a central role in neurodegenerative processes following brain injuries including ischaemia or epilepsy. In the present study, we examined patterns and possible mechanisms of Zn2+ neurotoxicity. Inclusion of 30–300 μm Zn2+ for 30 min caused neuronal necrosis apparent by cell body and mitochondrial swelling in cortical cell cultures. This Zn2+ neurotoxicity was not attenuated by antiapoptosis agents, inhibitors of protein synthesis or caspase. Blockade of glutamate receptors or nitric oxide synthase showed no beneficial effect against Zn2+ neurotoxicity. Interestingly, antioxidants, trolox or SKF38393, attenuated Zn2+-induced neuronal necrosis. Pretreatment with insulin or brain-derived neurotrophic factor increased the Zn2+-induced free radical injury. Kainate or AMPA facilitated Zn2+ entry and potentiated Zn2+ neurotoxicity in a way sensitive to trolox. Reactive oxygen species and lipid peroxidation were generated in the early phase of Zn2+ neurotoxicity. These findings indicate that entry and accumulation of Zn2+ result in generation of toxic free radicals and then cause necrotic neuronal degeneration under certain pathological conditions in the brain.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4276-4278 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of sulfur and hydrogen passivation on the thermal stability of RuO2 Schottky contacts on n-type GaAs have been studied by treatments with (NH4)2Sx solution and hydrogen plasma, respectively. The RuO2 thin films were deposited by dc magnetron sputtering using a Ru target and a mixture of argon and oxygen gases. The thermal stability of RuO2 Schottky contacts during thermal annealing in the temperature range from 200 to 550 °C for 10 min was investigated by current-voltage (I–V) measurements and Auger electron spectroscopy. For the sulfur treated sample, the ideality factor was constant at about 1.01 in the whole temperature range and the barrier height of 0.84 eV was maintained up to 350 °C. Hydrogenation treatment, however, was not so effective in preventing the thermal degradation compared to the sulfurization process. It is confirmed that the effective sulfur passivation to enhance the thermal stability of RuO2/GaAs is responsible for the suppression of an oxidation in the interface between GaAs and RuO2. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2389-2391 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observed violet/blue light emitted from cerium silicates which may be useful for silicon-based optoelectronics. The cerium silicate was produced during a rapid thermal annealing at high temperature (〉1100 °C) from the interface between silicon substrate and cerium oxide film. Detailed experiments including x-ray diffraction, high-resolution transmission electron microscope, and Auger depth profiling showed that the cerium silicate consists of Ce4.667(SiO4)3O and Ce2Si2O7 phases. The photoluminescence of the cerium silicate is very strong at room temperature. Specifically, the 358 nm luminescence line is attributed to the Ce2Si2O7 phase. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2479-2481 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the selective formation of InGaAs quantum dots (QDs) by molecular beam epitaxy. Nanoscale patterned Ga2O3 thin film deposited on the GaAs (100) substrate was employed as a mask material. Due to the enhanced migration effect of the group-III adatoms, such as Ga and In on Ga2O3 mask layer, the InGaAs QDs formed on the patterned substrate results in coalesced islands unlike those formed on the nonpatterned substrate. The estimation of the relative volume of the islands per unit area revealed that the desorption process as well as the migration of the Ga and In adatoms might occur on the Ga2O3 layer during the growth process, providing a good selective growth of self-assembled QDs. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3014-3016 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have confirmed the direct formation of nanosized crystalline silicon during the deposition of amorphous silicon layers by electron cyclotron resonance chemical vapor deposition (ECRCVD) on silicon and silicon–dioxide substrates. Two photoluminescence (PL) peaks at 680 and 838 nm were observed at room temperature from the samples. From cross-sectional high-resolution transmission electron microscopy (HRTEM) measurements, it was confirmed that nanosize silicon crystallites of 3–5 nm in diameter were randomly distributed throughout the amorphous silicon layer. Theoretical calculations using quantum size effects gave an average crystalline size of 4 nm which was consistent with the PL peak energy at 680 nm obtained from the sample. Also, the size of the crystallites could be controlled by the change of the substrate temperature during the deposition process. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2519-2523 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of atomic bond structure at the deposition surface on the crystallographic orientation dependence of carbon doping in GaAs was studied. Carbon doping into GaAs epilayers was performed by atmospheric pressure metalorganic chemical vapor deposition using extrinsic carbon sources of carbon tetrachloride (CCl4) and carbon tetrabromide (CBr4). Epitaxial growths were done on the exact (100) and four different misoriented GaAs substrates with orientations of (511)A, (311)A, (211)A, and (111)A. The electrical properties were measured by van der Pauw Hall analysis at room temperature. Electrically active concentrations in excess of 1×1019 cm−3 were obtained so that 4 and CBrCCl4 were demonstrated as efficient p-type dopant sources for carbon doping into GaAs. The dependence of hole concentration on the offset angle of CCl4-doped and CBr4-doped GaAs shows the same tendency, whereas the trend of carbon doping from intrinsic carbon doping technique is different from our results. In particular, the hole concentration on the (100) surface is higher than that on the (111)A surface in the cases of CCl4 and CBr4. The result is opposite to that of the intrinsic doping case. A model based on the atomic bond structure of an adsorption site of carbon-containing species is proposed to explain the difference. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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