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  • 1995-1999  (4)
  • 1
    Digitale Medien
    Digitale Medien
    Recovery from primary deep cerebral venous sinus thrombosis with recanalisation (1995)
    Springer
    Neuroradiology 37 (1995), S. 645-648 
    Details
    ISSN: 1432-1920
    Schlagwort(e): Key words Sinus thrombosis ; Reperfusion ; Cerebral infarction ; Computed tomography ; Magnetic resonance imaging
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Medizin
    Notizen: Abstract A 50-year-old woman with idiopathic deep cerebral sinus and vein thrombosis (DCVT) had cerebellar disturbance prior to impaired consciousness. CT and MRI revealed haemorrhagic infarction in the cerebellum and signal changes suggesting infarction in the thalamus and basal ganglia bilaterally. The straight sinus and internal cerebral vein (ICV) were dense on CT. On angiography, the vein of Galen (VG) and straight sinus were not seen. Following clinical recovery, CT and MRI became normal, and angiography showed recanalization of the VG and ICV. The relationship between cerebellar infarction and DCVT, and signal changes on CT and MRI are discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/s002340050169
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Recovery from primary deep cerebral venous sinus thrombosis with recanalisation (1995)
    Springer
    Neuroradiology 37 (1995), S. 645-648 
    Details
    ISSN: 1432-1920
    Schlagwort(e): Sinus thrombosis ; Reperfusion ; Cerebral infarction ; Computed tomography ; Magnetic resonance imaging
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Medizin
    Notizen: Abstract A 50-year-old woman with idiopathic deep cerebral sinus and vein thrombosis (DCVT) had cerebellar disturbance prior to impaired consciousness. CT and MRI revealed haemorrhagic infarction in the cerebellum and signal changes suggesting infarction in the thalamus and basal ganglia bilaterally. The straight sinus and internal cerebral vein (ICV) were dense on CT. On angiography, the vein of Galen (VG) and straight sinus were not seen. Following clinical recovery, CT and MRI became normal, and angiography showed recanalization of the VG and ICV. The relationship between cerebellar infarction and DCVT, and signal changes on CT and MRI are discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00593380
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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    Artikel (Nationallizenzen)
    Volltext
  • 3
    Digitale Medien
    Digitale Medien
    Two dimensional electron gases in SiGe/Si heterostructures grown by gas source molecular beam epitaxy (1995)
    Springer
    Journal of materials science 6 (1995), S. 330-335 
    Details
    ISSN: 1573-482X
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Maschinenbau
    Notizen: We have realized two dimensional electron gases (2DEGs) in tensile strained silicon (Si) channels between strain relaxed silicon germanium (Si0.70Ge0.30) barriers grown on Si(100) substrates by Gas Source Molecular Beam Epitaxy (GSMBE). Disilane (Si2H6), germane (GeH4), and arsine (AsH3) are used as the source gases. Compositionally graded buffer layers with a linear gradient of 30%; Ge/1 Μm relax the strain of the Si0.70Ge0.30 barrier layers by an amount greater than 95%; as determined from X-ray diffraction (XRD) rocking curves. Dislocation densities in the vicinity of the active strained Si channels are below 107 cm−2 as determined from transmission electron microscopy (TEM) measurements. These structures have low n-type background impurity concentrations ( 〈 1016 cm−3) and the Si0.70Ge0.30 barriers can be successfully doped with a unity activation ratio in the 1017 to 1020 cm−3 range. At present, we obtain 300 K (0.4 K) electron mobilities and sheet densities in our 2DEGs of 103 (5.3 × 104) cm2/Vs and 3 × 1012 (5.2 × 1011) cm−2, respectively. A discussion of the requirements for growing these structures by GSMBE and the modifications needed to improve the transport properties of the 2DEGs is presented.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00125888
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    Low-dose SIMOX wafers for LSIs fabricated with internal-thermal-oxidation (ITOX) process: electrical characterization (1999)
    Springer
    Journal of materials science 10 (1999), S. 365-371 
    Details
    ISSN: 1573-482X
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Maschinenbau
    Notizen: Abstract Electrical performance of separation by implanted oxygen (SIMOX) wafers manufactured by internal-thermal-oxidation (ITOX) process was evaluated. Breakdown behaviour of the buried oxide (BOX) layer was confirmed quantitatively to be dominated by Si islands therein, which were found to be reduced in size or eliminated by the ITOX process. By optimizing the oxygen dose and ITOX amount, a BOX breakdown field of about 8 MV/cm, comparable to those of thermally-grown oxide, was attained. The gate oxide integrity on an ITOX-SIMOX wafer was found to be superior to that of bulk Si wafers, indicating the wafer surface was improved by the high temperature annealing.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1023/A:1008997423606
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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    Artikel (Nationallizenzen)
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