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  • 1995-1999  (4)
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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermally induced chemical transformations at the interface between a 100 nm α–Fe2O3 and a polycrystalline α–Al2O3 substrate are studied and compared for the cases of the as-formed and ion bombarded interfaces. The thermal annealings are carried out under vacuum at 450 °C for different time durations and the transformations are examined by conversion electron Mössbauer spectroscopy. It is shown that in the sample prebombarded with 110 keV Ar+ ions, the formation of Fe3−xAlxO4, FeAl2O4, and FeO phases is favored at variance with a nonbombarded sample in which primarily a defective Fe3O4-y phase is produced with some amount of FeO. This difference is explained in terms of the annealing process of the oxygen vacancies produced during Ar implantation near the interfacial region. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2228-2233 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin Fe2O3 layers (44 and 55 nm) were deposited by pulsed excimer laser ablation on single-crystal alumina (α-Al2O3) substrates heated at 675 °C. The ion beam mixing of these α-Fe2O3/α-Al2O3 couples was carried out using 300 keV Kr3+ ions at a fluence of 2×1016 ions/cm2. The mixing effect was followed by Rutherford backscattering spectrometry (RBS), conversion electron Mössbauer spectroscopy, and grazing incidence x-ray diffraction method. RBS spectra do not show any evidence of mixing at the interface, whereas the data obtained with the two other techniques display phases like oxygen deficient Fe3O4, Fe3−yAlyO4, and Fe1+xAl2−xO4. For this last phase, x is determined as being equal to about 0.5. It is shown that ion beam mixing is more efficient for the thinner Fe2O3 layer, in accordance with the projected range of the Kr3+ ions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Nodular iron of martensitic structure was treated by means of a XeCl laser prototype. The energy density varied from 0.3 to 5 J/cm2 and the number of shots from 4 to 40. Conversion electron Mössbauer spectroscopy, conversion X-ray Mössbauer spectroscopy and grazing incidence X-ray diffraction were used to characterize the irradiated surface. Some Rutherford backscattering spectrometry measurements were performed to control surface oxidation and carbon distribution. It is shown that after irradiation austenite formed in a rather deep heat affected zone (10–20 μm) compared to the thickness of the melted zone (∼ 1 μm). The austenite amount as well as its carbon content increase with energy density and number of shots up to a threshold of carbide formation. Beyond the threshold Fe2C, Fe3C and Fe5C2 formed only in the melted zone. The carbon content as a function of depth is constant in the melted layer, then decreases quickly from the melted layer-heat affected zone interface down its initial value. The carbon content is shown to govern the evolution of phases content in the melted layer depending on the laser treatment conditions.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 34 (1999), S. 2949-2954 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The effects of high dose carbon and nitrogen implantations into copper on the type of chemical bonds and stoichiometry of the formed C–N phases are described. The results are compared with those obtained after nitrogen implantation into diamond like carbon (DLC) layers. The striking difference between the two experiments is the stoichiometry of covalently bonded C–N phase which corresponds to C2N or to C3N3.7 for N implantation into DLC and C and N implantation into copper, respectively.
    Type of Medium: Electronic Resource
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