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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 350-354 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A variable exit beam height double-crystal monochromator for high-power insertion devices was built and tested at the Photon Factory. The second crystal is mounted on a high-precision XY translational stage and its position in the parallel and perpendicular direction to the reflecting plane (x,y) is computer controlled. In this design, the exit beam height (y) and geometrically required positioning of the second crystal (x) are separately controlled. Either a fixed or variable exit beam height is obtained over the Bragg angle (θ) range from 6° to 25°. A systematic noise caused by degraded parallelity between the two crystals is observed in extended x-ray absorption fine structure spectra when x and y are simultaneously controlled. This noise is significantly reduced by a versatile control of (x,y): for a typical scan (∼1 keV) only y is allowed to vary while both coordinates are controlled when a monochromator is tuned over a wider energy range. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 5477-5485 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new apparatus for structural studies of surfaces and buried interfaces using synchrotron radiation was built and tested at the 27-pole wiggler station BL13B of the Photon Factory. The apparatus was designed to combine x-ray absorption fine structure (XAFS), x-ray standing wave (XSW), and surface x-ray diffraction techniques in the same ultrahigh vacuum (UHV) chamber. The apparatus features a seven-element Si(Li) solid-state detector array for a fluorescence yield measurement and a high precision eight-axis goniometer in the UHV chamber with a base pressure of 1×10−10 Torr. For the same sample mounted on the in-vacuum goniometer, vertically or horizontally polarized surface-sensitive XAFS, surface x-ray diffraction, and XSW can be measured. As a performance test, the structure of Ge overlayers on Si(001) was studied by polarized surface-sensitive XAFS. The results show that the apparatus can probe the local structure of adatoms with ∼0.1 monolayer sensitivity. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4482-4486 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Directly water-cooled silicon crystals with various types of water channels and cooling fins were fabricated and tested at the 27-pole wiggler beamline BL13 of the Photon Factory. Double-crystal rocking curves for a Si(111) reflection indicated that the performance of a grooved silicon crystal in cooling efficiency is significantly improved by replacing conventional semicircular water channels and cooling fins with flat ones with optimum dimensions. For this design, the width of a Si(111) rocking curve was independent of a wiggler power within 2/3 of the full power. In this power range, a highly stable monochromatized beam with an energy resolution required in x-ray absorption near-edge structure experiments (ΔE/E∼2×10−4) was obtained. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6926-6928 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cu2−xSe is an important impurity phase of the ternary chalcopyrite semiconductor CuInSe2 associated with Cu/In composition ratios greater than unity. We have observed directly in a prototypical epitaxial system the formation of Cu2−xSe on Cu-rich CuInSe2 thin films epitaxially grown on GaAs (001). Atomic force microscopy measurements of the surface topology of as-grown films clearly show faceted rectangular crystallites with dimensions on the order of 100 nm. Cross-sectional transmission electron microscopy measurements of the Cu-rich CuInSe2 showed rectangular protrusions on the surface as well as wedge shaped facets in the CuInSe2 film. Two-dimensional reciprocal space x-ray mapping of the as-grown Cu-rich CuInSe2 showed the in-plane lattice constant of the Cu2−xSe phase to be partially strained to the CuInSe2 layer. The presence of the β phase of Cu2−xSe is also presented as an alternative explanation for Cu–Pt ordering reports in CuInSe2 that have appeared in the literature. Strain-related surface undulations observed only in Cu-rich CuInSe2 are also linked to the presence of this strained Cu2−xSe layer. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1630-1632 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Drastic changes in average molecularities (m=Cu/In) from m(very-much-greater-than)1 to m=0.92–0.93 and in hole concentrations from p(very-much-greater-than)1019 cm−3 to as low as p=7.5×1016 cm−3 have been observed in molecular beam epitaxy grown CuInSe2 after selective etching of the Cu–Se phase by a KCN aqueous solution; high hole concentrations and Cu-excess compositions of the as-grown films were attributed to the Cu–Se phase. On the other hand, well-defined photoluminescence emissions were found characteristic of intrinsic CuInSe2. The presence of the Cu–Se phase made possible the growth of high-quality CuInSe2 epitaxial films at a temperature well below the melting point of any Cu–Se compound. Surface topology measurements showed that the surface of the as-grown films was not fully covered by Cu–Se grains, leaving holes with depths of 200–300 nm after KCN etching. The enhanced two-dimensional growth and the reduced defect concentration imply that a very thin Cu-excess surface layer controls the growth of CuInSe2 when grown under Cu-excess conditions. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1286-1288 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using x-ray diffraction and transmission electron microscopy we have found that InAs1−xPx films deposited on InP(001) substrates with organometallic vapor phase epitaxy grow in an unusual island growth mode characterized by large strain-dependent interdiffusion. Initially, strong intermixing occurs, producing pseudomorphic islands of intermediate composition. These grow only until some point in the relaxation process, possibly a critical value of the strain, after which islands of the intended composition begin to appear. Furthermore, both types of islands are found to penetrate deeply into the substrate. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3410-3412 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present evidence for anomalously large, strain-dependent interdiffusion in InAs1−xPx layers grown on InP(001) substrates by organometallic vapor phase epitaxy at 620 °C. Specifically, there are strong indications for the existence of a "critical strain:" if the strain is ∼1.9% or more, much P–As mixing occurs, but for smaller strain the mixing is greatly decreased. The interdiffusion is also highly sensitive to temperature. A set of samples grown at 580 °C exhibits a factor of ∼2 decrease in P–As mixing compared to a set grown at 620 °C. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 5 (1998), S. 1001-1003 
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Pump and probe X-ray absorption fine structure (XAFS) is used as a local probe of excited atoms, which can provide direct information on lattice distortion, relaxation and atomic rearrangements associated with electronic excitations. In situ XAFS experiments during optical excitation are reported. Utilizing a grazing-incidence fluorescence excitation, which minimizes the mismatch between the probing depths of X-ray excitation and optical pumping, it is found that the dominant photoinduced defect state in amorphous selenium at low temperature is a pair of threefold neutral C^0_3 states: 2C^*_2 \rightarrow (C^0_3-C^0_3), where C^*_2 denotes the twofold excited lone-pair state. The results indicate that optical pumping of chalcogen atoms at low temperature leads to locally over-coordinated defect pairs similar to those in the liquid state. The origin of reversible photostructural changes, such as photodarkening or photoinduced fluidity, is attributed to the structural disorder caused by the formation and annihilation of dynamical interchain bonds during optical melting.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 5 (1998), S. 48-53 
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 2 (1995), S. 99-105 
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Surface-sensitive X-ray absorption fine structure (XAFS) with sub-monolayer sensitivity based on grazing-incidence fluorescence detection is reported. The efficiency of fluorescence detection increased by more than two orders of magnitude by combining a multipole wiggler with a multi-element Si(Li) solid-state detector. The capability of the present technique for structural studies of surfaces and buried interfaces in the hard X-ray region was demonstrated by As K-edge XAFS studies of the InP(001) surface exposed to AsH3 flow. The results indicated that 0̃.1 monolayer As atoms are incorporated into the surface replacing the P atoms.
    Type of Medium: Electronic Resource
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