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  • 1
    Electronic Resource
    Electronic Resource
    The dissociation energy and the charge state of a copper-pair center in silicon (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 474-476 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal dissociation of Cu pairs was studied in p-type silicon. The dissociation energy of the Cu pair was found to be 1.02±0.07 eV, twice as high as the binding energy of a Coulombically bound donor-acceptor pair placed on nearest neighbor 〈111〉 sites. This implies that the pair is either covalently bonded, or it consists of an ionically bonded doubly negatively charged acceptor and a singly charged donor. To distinguish between these two models, the dependence of the hole emission rate on the electric field in the depletion region was studied. The absence of the Pool-Frenkel emission enhancement ruled out the acceptor nature of the center and the purely ionic type of bonding. On the other hand, the polarization potential describing emission from a neutral impurity gave a satisfactory fit to the experimental data. It is concluded that the Cu pair is a donor with either covalent or mixed type of bonding. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120790
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of matrix on InAs self-organized quantum dots on InP substrate (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 362-364 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs self-organized quantum dots in In0.53Ga0.47As and In0.52Al0.48As matrices have been grown on InP substrates by molecular beam epitaxy. The dot size in InGaAs has been found to be 3–4 times larger, but the areal density about an order of magnitude smaller than that in InAlAs. Low-temperature photoluminescence (PL) of the InAs/InGaAs quantum dots is characterized by a narrow (35 meV) PL line as compared to that of InAs/InAlAs quantum dots (170 meV). Quantum dot formation increases the carrier localization energy as compared to quantum well structures with the same InAs thickness in a similar manner for both InAs/InGaAs and InAs/InAlAs structures. The effect of the barrier band gap on the optical transition energy is qualitatively the same for quantum well and quantum dot structures. The results demonstrate a possibility of controlling the quantum dot emission wavelength by varying the matrix composition. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120737
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  • 3
    Electronic Resource
    Electronic Resource
    Annealing dynamics of arsenic-rich GaAs formed by ion implantation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1470-1475 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the annealing temperature dependence of structural and electrical properties in heavily arsenic implanted GaAs which has a similar amount of excess arsenic to low temperature GaAs (LT-GaAs). The fundamental properties of this material are quite similar to those of LT-GaAs. High resolution x-ray diffraction measurements have revealed that it has an increased lattice constant, which is reduced to the value of bulk GaAs by annealing between 300 and 400 °C. Electrical conduction in this material is dominated by hopping between deep states, which is also reduced by annealing above 350 °C. In samples annealed at temperatures ranging from 600 to 850 °C, the dominant electron trap is EL2; it has been confirmed by resistivity measurements with n-i-n structures that the Fermi level is pinned by EL2. In samples annealed below 500 °C, the dominant electron trap is not EL2 but the U-band, although electron paramagnetic resonance measurements show the existence of a large concentration of the ionized arsenic antisite defect (AsGa+). This supports the notion that the U-band is formed by AsGa defects with slightly modified carrier emission properties compared with EL2. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360235
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of low-temperature AlxGa1−xAs lattice properties using high resolution x-ray diffraction (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4452-4454 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using high resolution x-ray diffraction techniques, we have studied the lattice parameter behavior of low-temperature (LT) AlxGa1−xAs as a function of annealing temperature and aluminum content. Similar to LT GaAs, the as-grown LT AlxGa1−xAs layers exhibit a dilated lattice constant which, upon annealing, contracts to that of "normal'' material. The onset of this contraction in LT Al0.3Ga0.7As, however, is found to occur at an annealing temperature nearly 100 °C higher than that required for LT GaAs. In addition, the relative lattice expansion in the as-grown LT layer is found to be a decreasing function of Al content, ranging from 0.099% for LT GaAs to 0.059% for LT Al0.3Ga0.7As. This is attributed to lower than expected As incorporation in the LT AlxGa1−xAs during growth. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359473
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  • 5
    Electronic Resource
    Electronic Resource
    Determination of parameters of deep level defects from numerical fit of deep level transient spectroscopy spectra: Analysis of accuracy and sensitivity to noise (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 244-250 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The numerical fit of deep level transient spectroscopy (DLTS) spectra, used primarily to analyze complex DLTS spectra, is evaluated in terms of the accuracy of measuring deep levels and the sensitivity to noise. It is shown that by using numerical fit of DLTS spectra, the uncertainties in the emission activation energy and the capture cross section of deep level defects can be improved by three to four times over the standard Arrhenius plot method. Two modifications of the fitting procedure are tested: a fit of a DLTS spectrum using one rate window, and a simultaneous fit using five different rate windows. It is shown that simultaneous fit of spectra using different rate windows is significantly more accurate, has noticeably larger convergence radius for the initial values of parameters, and is less sensitive to noise. The advantages of the fitting routine are demonstrated on experimentally obtained noisy DLTS spectra. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148503
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  • 6
    Electronic Resource
    Electronic Resource
    Chemical and structural transformation of sapphire (Al2O3) surface by plasma source nitridation (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7909-7913 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemical, morphological, and structural characteristics of nitrogen plasma treated c-plane sapphire substrate surfaces were studied by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and transmission electron microscopy (TEM). The plasma treatment was carried out by exposing sapphire substrates (Ts=700 °C) to a flow of 35 sccm of activated nitrogen species generated by a constricted-plasma source for 5–60 min. The emergence of the N 1s peak in XPS indicates nitrogen incorporation in sapphire as soon as after 5 min of nitridation. AFM images show that the sapphire contained a high density of islands after 1 h of nitridation. A thin polycrystalline AlN layer was observed on the nitridated sapphire surface by TEM. Both the thickness of the AlN layer and the N 1s photoelectron peak intensity increase nonlinearly with respect to nitridation time. The nonlinear relationship between the thickness of the nitridated layer and the reaction time suggests the growth of the AlN layer follows a diffusion limited growth mechanism. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370606
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  • 7
    Electronic Resource
    Electronic Resource
    Structural and optical quality of GaN/metal/Si heterostructures fabricated by excimer laser lift-off (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1887-1889 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gallium nitride (GaN) thin films grown on sapphire substrates were successfully bonded and transferred onto Si substrates using a Pd–In metallic bond. After bonding, a single 600 mJ/cm2, 38 ns KrF (248 nm) excimer laser pulse was directed through the transparent sapphire followed by a low-temperature heat treatment to remove the substrate. Channeling-Rutherford backscattering measurements revealed the thickness of the defective interfacial region to be approximately 350 nm. The full width at half maximum, low-temperature (4 K), donor-bound exciton photoluminescence (PL) peak was larger by 25% on the exposed interfacial layer compared to the original GaN surface. Ion milling of the exposed interface to a depth of 400 nm was found to remove the interfacial layer and associated defects. The minimum channeling yield and PL linewidths from the exposed interface were found to be comparable to those obtained from the original GaN surface after ion milling. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124861
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  • 8
    Electronic Resource
    Electronic Resource
    Competitive gettering of copper in Czochralski silicon by implantation-induced cavities and internal gettering sites (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3060-3062 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effectiveness of copper gettering by implantation-induced cavities in competition with internal gettering sites in silicon was demonstrated. The cavities were formed in the near surface region by He implantation and annealing while the internal gettering sites were created in the material's bulk by a ramped hi–lo–hi oxygen precipitation heat treatment. Ion implantation was used to controllably introduce the copper. The quantity of implanted copper was below that corresponding to saturation of solution throughout the wafer at the gettering temperatures of 700 and 800 °C. The cavities were found to be an effective gettering site in the presence of internal gettering sites with only a small amount of copper being gettered at the internal gettering sites. These results have important implications for optimal gettering of metallic impurities from integrated circuit device regions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116839
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical characterization of low-temperature Al0.3Ga0.7As using n-i-n structures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 699-701 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Through temperature-dependent conductivity measurements, we show evidence of a deep trap level in low-temperature (LT) Al0.3Ga0.7As layers with an activation energy of ∼0.96 eV. This energy is near that of EL2-like defects found previously in "normal'' epitaxial Al0.3Ga0.7As. It is also considerably larger than the 0.70 eV value typically associated with defects in LT GaAs, which may explain the observed large resistivity ((approximately-greater-than)1011 Ω cm) in LT Al0.3Ga0.7As. Current transient spectroscopy (CTS) of these samples yields a deep level activation energy of 1.01 eV, in close agreement with the value obtained from conductivity measurements. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116596
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  • 10
    Electronic Resource
    Electronic Resource
    Thermal annealing characteristics of Si and Mg-implanted GaN thin films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2702-2704 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report the results of ion implantation of GaN using 28Si and 24Mg species. Structural and electrical characterizations of the GaN thin films after thermal annealing show that native defects in the GaN films dominate over implant doping effects. The formation energies of the annealing induced defects are estimated to range from 1.4 to 3.6 eV. A 40 keV 1014 cm−2 Mg implant results in the decrease of the free-carrier concentration by three orders of magnitude compared to unimplanted GaN up to an annealing temperature of 690 °C. Furthermore, we have observed the correlation between these annealing-induced defects to both improved optical and electrical properties. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116314
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