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  • 1
    Electronic Resource
    Electronic Resource
    An ultrahigh vacuum scanning tunneling microscope for in situ studies of thin-film growth (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 1455-1457 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new ultrahigh vacuum (UHV) scanning tunneling microscope design has been developed and optimized for in situ investigations of thin-film growth. The basic concept of the microscope is to retract the sample by means of the coarse positioning motor under an angle of 30° with respect to the piezotube scanner. This geometric arrangement allows normal film deposition and excludes any interaction between the evaporation beam and the tip. The instrument has the capability of regaining a particular microscopic location on the sample surface with an accuracy of less than 100 nm posterior to a sample displacement of more than 20 mm. Sequences of images of a spot during homoepitaxial growth of Cr on a Cr(100) single-crystal substrate have been obtained. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147951
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  • 2
    Electronic Resource
    Electronic Resource
    Bubble domains in garnet films studied by magnetic force microscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6324-6326 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied magnetic domain structure in (YSmLuCa)3(FeGe)5O12 garnet thin film by using magnetic force microscopy (MFM). Domain wall contrast of bubble domains has been revealed using Permalloy–Fe double-layer thin-film tips. We have also observed that nanometer scale deformations of the surface disturb a magnetic bubble structure by introducing stripe domains. MFM images have shown that stripe domains pin their domain walls to surface scratches. The domains can change their location with respect to a scratch by switching a domain wall pinned to a scratch. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360513
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  • 3
    Electronic Resource
    Electronic Resource
    Vertical polarization of quantum magnets in high density arrays of nickel dots with small height-to-diameter ratio (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2168-2170 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using interferometric lithography and postexposure processing we have fabricated high density (1.3×1010/in.2) magnetic nickel dot arrays on silicon substrates. The dots have the shape of truncated cones and are 75 nm in height and about 120 nm in diameter. The arrays are characterized using magnetic force microscopy (MFM). We demonstrate that such shallow dots with a small height-to-diameter ratio of only 0.63, show single-domain behavior with vertical, out-of-plane magnetization, i.e., along their short axis. The coercive field of these dots is drastically enlarged due to shape anisotropy and is exceeding the dot interaction strength by about one order of magnitude. Local manipulation of the magnetization state using an additional external field and the stray field of the MFM tip is demonstrated. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121310
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  • 4
    Electronic Resource
    Electronic Resource
    A scanning force microscope with atomic resolution in ultrahigh vacuum and at low temperatures (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 221-225 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present a new design of a scanning force microscope (SFM) for operation at low temperatures in an ultrahigh vacuum (UHV) system. The SFM features an all-fiber interferometer detection mechanism and can be used for contact as well as for noncontact measurements. Cooling is performed in a UHV compatible liquid helium bath cryostat. The design allows in situ cantilever and sample exchange at room temperature; the subsequent transport of the microscope into the cryostat is done by a specially designed transfer mechanism. Atomic resolution images acquired at various temperatures down to 10 K in contact as well as in noncontact mode are shown to demonstrate the performance of the microscope. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148499
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  • 5
    Electronic Resource
    Electronic Resource
    Quantitative analysis of lateral force microscopy experiments (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 2560-2567 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The analysis of lateral force microscopy experiments is discussed with emphasis on calibration issues and the statistical treatment of the original data in order to obtain reliable quantitative results. This includes an extensive discussion about the statistical and systematical errors which have to be considered if experimental results obtained under different experimental conditions (such as different cantilevers, samples, humidities, with or without lubricant, etc.) have to be compared. The proposed data analysis procedure is exemplified using data acquired on germanium sulfide and highly oriented pyrolytic graphite. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147214
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  • 6
    Electronic Resource
    Electronic Resource
    Imaging of domain-inverted gratings in LiNbO3 by electrostatic force microscopy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 146-148 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric domains in LiNbO3 have been investigated by means of electrostatic force microscopy. Polarization-inverted gratings with 4 μm periodicity were fabricated by titanium diffusion into both +c and −c faces of single-domain LiNbO3 crystals. The distribution of the electric field in the vicinity of the sample surface was measured using scanning probe microscopy. The electrostatic force image was found to correlate with the shape of the domain-inverted profile observed by scanning electron and optical microscopies. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119455
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  • 7
    Electronic Resource
    Electronic Resource
    Structure of cross-tie wall in thin Co films resolved by magnetic force microscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3635-3637 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the magnetic domain structure of a thin polycrystalline Co film by magnetic force microscopy (MFM). Domain walls of the cross-tie type have been observed for a Co film of 50 nm thickness. Due to the high lateral resolution of MFM we have been able to study the magnetic structure of a single cross tie. We have determined locations of Bloch lines within a domain wall comparing the experimental data with a theoretical model of a cross-tie wall. In order to explain our experimental results we have proposed a model for the interaction between a MFM tip and a cross-tie wall. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115754
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  • 8
    Electronic Resource
    Electronic Resource
    Vacuum-tunneling magnetoresistance: The role of spin-polarized surface states (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 124-126 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied magnetoresistance effects in Fe–vacuum–Gd tunnel junctions as a function of the applied bias voltage by using a scanning tunneling microscope operated under ultra-high-vacuum conditions. We found that the vacuum-tunneling magnetoresistance (VTMR) can be maximized by tunneling into highly spin-polarized surface states. By tuning the applied bias to the energetic positions of the spin-polarized surface states, a VTMR response as much as 31% at 70 K was obtained. This result is explained in terms of an enhancement caused by the spin-polarized surface state and a suppression of spin-flip tunneling processes compared to tunnel junctions with oxide barriers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124296
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  • 9
    Electronic Resource
    Electronic Resource
    Scanning capacitance microscope as a tool for the characterization of integrated circuits (1998)
    Springer
    Applied physics 66 (1998), S. S421 
    Details
    ISSN: 1432-0630
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390051175
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  • 10
    Electronic Resource
    Electronic Resource
    Scanning tunneling spectroscopy on n-InAs(110): Landau-level quantization and scattering of electron waves at dopant atoms (1998)
    Springer
    Applied physics 66 (1998), S. S203 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 71.70.Di; 72.10.Fk; 71.20.Nr
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Spatially resolved I./V.-images exhibit circular symmetrical corrugations at the surface. These are ascribed to scattered electron waves at dopant atoms below the surface. From the energy dependence of their diameter, the dispersion of the InAs conduction band at the Γ-point is estimated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390051130
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