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  • 2000-2004  (4)
  • 1990-1994  (4)
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  • 1
    Digitale Medien
    Digitale Medien
    Defect formation in a two-layer Al/Ni crystal bombarded with ions having energies close to the sputtering threshold (2000)
    Springer
    Technical physics letters 26 (2000), S. 429-431 
    Details
    ISSN: 1090-6533
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract Atomic collision cascades developed in an Al/Ni system, comprising a monolayer of Al atoms on the Ni(100) single crystal face bombarded at normal incidence by 25-or 50-eV Ar and Xe atoms, were simulated by means of molecular dynamics. It is shown that the number of Al atoms relocated within the first layer of the Al/Ni crystal markedly exceeds the number of analogous relocations in a nickel single crystal, which is explained by differences in the number of vacancies in the first layer of two systems, and in the lattice constants of Al and Ni.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1262869
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  • 2
    Digitale Medien
    Digitale Medien
    Atomic relocations in a two-layer Al/Ni system bombarded with ions having energies close to the sputtering threshold (2000)
    Springer
    Technical physics letters 26 (2000), S. 372-374 
    Details
    ISSN: 1090-6533
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract Collision cascades developed at 300 K in a Ni single crystal and in a system comprising a monolayer of Al atoms on the Ni(100) single crystal face bombarded at normal incidence by 25-and 50-eV Ar and Xe atoms were simulated by method of molecular dynamics. It was found that the number of atoms relocated through the Al-Ni interface markedly exceeds the number of analogous relocations in the nickel single crystal.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1262847
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  • 3
    Digitale Medien
    Digitale Medien
    On mechanisms of defect formation in aluminum crystals bombarded by low-energy heavy ions (2000)
    Springer
    Technical physics letters 26 (2000), S. 455-457 
    Details
    ISSN: 1090-6533
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract The mechanisms of formation of vacancies and radiation-induced adsorbed and interstitial atoms in the cascades of atomic collisions induced by 25-, 40-and 50-eV Ar and Xe ions normally incident onto the Al(100) surface at 300 K are discussed within the framework of the molecular dynamics approach. The numbers of bulk and surface vacancies formed in the course of a collision cascade exhibit two maxima in the case of Xe ions and a single maximum in the case of Ar ions.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1262875
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  • 4
    Digitale Medien
    Digitale Medien
    Investigations on Surface and Bulk Semiconductor Properties Using Wavelength Dependent TRMC Measurements (1993)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 32-33 (Dec. 1993), p. 601-608 
    Details
    ISSN: 1662-9779
    Quelle: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Thema: Physik
    Materialart: Digitale Medien
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/25/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.32-33.601.pdf
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  • 5
    Digitale Medien
    Digitale Medien
    Cluster emission under ion bombardment of metallic targets (1991)
    Springer
    Applied physics 52 (1991), S. 213-217 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 36.40
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Mass spectroscopic studies of the neutral particles sputtered by Ar+ ions at 8 keV from polycrystaline samples have been performed, using non-resonant laser ionization and subsequent time-of-flight mass spectroscopy. Besides sputtered atoms, also dimer and trimer contributions in the order of 10−1 to 10−2 and 10−3 to 10−4, respectively, are found in the sputtered flux. The data obtained here together with previously published data by other groups for different bombarding energies provide strong support for the validity of the recombination model.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00324422
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    Time-of-flight investigation of the intensity dependence of laser-desorbed positive ions from SrF2 (1994)
    Springer
    Applied physics 58 (1994), S. 563-571 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.80.Ba ; 79.20.Ds
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The intensity dependence of the total and specific yields of positive ions desorbed from SrF2 under 193 nm and 308 nm excimer-laser irradiation has been investigated by the time-of-flight method. The following positive ion species have been detected: F+, Sr+, Sr++, SrF++ and SrF 2 + . The Sr+ and SrF+ emission yields are found to increase as E n, where E represents the laser energy per pulse. The exponent n is related to defect-initiated neutral particle emission and gas-phase ionization. The influence of surface damage on this power dependence is investigated. The F+ emission yield showed a quite different behaviour compared to that of the Sr+ and SrF+ emission. At both wavelengths the total positive ion emission yields saturate at a certain laser energy. In the saturation regime the SrF+ emission vanishes and alternative emission of F+ and Sr+ was observed at both wavelengths, but the total emission yield in the saturation regime (F+ + Sr+) remained constant. A Scanning Electron Microscope (SEM) was used to investigate the damage spots after laser irradiation for thermal effects.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00348167
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  • 7
    Digitale Medien
    Digitale Medien
    Modeling of Atomic Displacements in the Bombardment of Copper by Ar and Xe Ions with Near-Sputtering-Threshold Energies (2000)
    Springer
    Russian physics journal 43 (2000), S. 860-866 
    Details
    ISSN: 1573-9228
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract Using the molecular dynamics method, collision-induced cascades are modeled, which are generated in the normal bombardment of a copper crystal (100) by Ar and Xe ions with energies 25, 40, and 50 eV as well as by Xe ions at 15 eV and crystal temperature 300 K. Time dependences are derived for the formation of vacancies and interstitial atoms as a function of depth of the crystal and radiation-adsorption atoms (adatoms) on its surface during the cascade development. The adatoms are shown to contribute considerably to the change in r.m.s. atomic displacement in the thermal stage of the cascade. It is proved that Ar ions produce more adatoms on the surface vacancies while Xe ions do so in the bulk of the crystal below the first atomic layer and exhibit more effective mixing in the [100] direction.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1023/A:1009493002699
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  • 8
    Digitale Medien
    Digitale Medien
    The emission of secondary clusters and its relevance for analytical Laser-SNMS (1991)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 341 (1991), S. 12-16 
    Details
    ISSN: 1618-2650
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie
    Notizen: Summary The emission of secondary dimers and trimers under 8 keV Ar+ ion bombardment has been investigated under the aspects of its relevance for quantitative SNMS analysis and its implication for the basic understanding of the sputtering process. The measurements have been performed with a newly developed Laser-Multiphoton-Ionization-TOF-SNMS apparatus. The problematic of saturation and fragmentation of multimers in Laser-SNMS is addressed and compared for different ionization techniques. Cu and Cr metal as well as a CuAgAu alloy with known element concentrations have been investigated using 308 and 193 nm laser radiation for post-ionization. The data imply, that for these materials and primary ion energies dimer/atoms ratios of 10–30% are characteristic. These numbers also imply, that neglecting cluster-contributions can lead to substantial errors in quantitative analysis.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00322098
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