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  • 1995-1999  (5)
  • 1990-1994  (8)
  • 1975-1979  (7)
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  • 1
    Digitale Medien
    Digitale Medien
    Photoluminescence of CuInS2 thin films and solar cells modified by postdeposition treatments (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 482-484 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The photoluminescence of CuInS2 thin films and solar cells is investigated as a function of postdeposition treatments for different temperatures and excitation intensities. Annealing in hydrogen atmosphere causes an increase of PL intensity at 1.445 eV by more than a factor of 100, while subsequent annealing in oxygen or air ambient passivates this transition, which is ascribed to a donor-acceptor pair recombination between a sulphur vacancy and a copper vacancy. A defect mechanism is suggested that assumes the passivation of sulphur vacancies by oxygen in grain surfaces which can be activated by hydrogen annealing. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.119585
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  • 2
    Digitale Medien
    Digitale Medien
    Photoconduction in fullerene films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 758-760 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report results from a detailed study of photoconduction in C60 films. At low temperatures the photoaction spectra show vibrational coupling to the first electronic transition, indicating that the generation of mobile carriers in the solid involves molecular excitation schemes. The lowest energy transition is found to occur at photon energies of ∼1.8 eV. Below this energy, only weak and field-dependent photoresponse is observed. We attribute this to a tail of localized states related to defects in the film. The edge between localized and extended states approximately coincides with the first vibronic peak. From this peak we find the photoconduction edge of the film to be 1.81±0.01 eV at room temperature in the face-centered-cubic phase and 1.85±0.01 eV in the simple cubic phase below ∼200 K.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.112222
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  • 3
    Digitale Medien
    Digitale Medien
    Hydrogen implantation and diffusion in silicon and silicon dioxide (1995)
    Springer
    Applied physics 61 (1995), S. 381-388 
    Details
    ISSN: 1432-0630
    Schlagwort(e): PACS: 61.70.Tm; 79.20.Nc; 66.30.Jt
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract.  Depth profiles of hydrogen implanted into crystalline silicon in random direction at different fluences have been measured by the 15N technique and by SIMS. Whereas hydrogen implanted at a fluence of 1015 ions/cm2 shows some limited mobility, no such mobility is observed for higher implantation fluences. In these cases, ballistic computer codes describe the depth distributions well, within the ranges of both experimental and theoretical accuracy. Annealing up to 510 K does not change the hydrogen distributions. Furthermore, high-fluence hydrogen implantation into silicon dioxide has been examined. There is some indication for radiation-enhanced diffusion during the implantation process. Upon subsequent thermal annealing, the hydrogen is found to diffuse, probably via a trapping/detrapping mechanism associated with an OH/H2 transformation of the hydrogen bonding.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01540112
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  • 4
    Digitale Medien
    Digitale Medien
    Hydrogen implantation and diffusion in silicon and silicon dioxide (1995)
    Springer
    Applied physics 61 (1995), S. 381-388 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.70.Tm ; 79.20.Nc ; 66.30.Jt
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Depth profiles of hydrogen implanted into crystalline silicon in random direction at different fluences have been measured by the15N technique and by SIMS. Whereas hydrogen implanted at a fluence of 1015 ions/cm2 shows some limited mobility, no such mobility is observed for higher implantation fluences. In these cases, ballistic computer codes describe the depth distributions well, within the ranges of both experimental and theoretical accuracy. Annealing up to 510 K does not change the hydrogen distributions. Furthermore, high-fluence hydrogen implantation into silicon dioxide has been examined. There is some indication for radiation-enhanced diffusion during the implantation process. Upon subsequent thermal annealing, the hydrogen is found to diffuse, probably via a trapping/detrapping mechanism associated with an OH/H2 transformation of the hydrogen bonding.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01540112
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  • 5
    Digitale Medien
    Digitale Medien
    Atomic nitrogen in C60:N@C60 (1998)
    Springer
    Applied physics 66 (1998), S. 287-292 
    Details
    ISSN: 1432-0630
    Schlagwort(e): PACS: 36.40.Cg, 61.46.+w, 76.30.Rn, 82.80.Bg
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: 60 (atomic nitrogen inside C60) is produced by ion implantation. Two different production methods are employed: Kaufman ion source and glow discharge. After the bombarded material is dissolved in toluene or CS2 and is filtered, several milligrams of C60 containing N@C60 in a concentration of 10-4 to 10-5 are obtained. N@C60 gives a very clear hyperfine-split electron paramagnetic resonance signal. The most prominent features of N@C60 are: (i) Nitrogen in C60 keeps its atomic electronic configuration and occupies the on-center position. (ii) N@C60 is stable at ambient conditions, the thermal instability starts at 260 °C. (iii) The complex survives exohedral addition reactions and is a sensitive detector of cage distortions caused by addends. (iv) C60 and N@C60 exhibit slightly different retention times in column chromatography, thus permitting an enrichment of N@C60 by this method.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/s003390050668
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  • 6
    Digitale Medien
    Digitale Medien
    Lattice defects in cadmium studied by the angular correlation method (1979)
    Springer
    The European physical journal 33 (1979), S. 155-162 
    Details
    ISSN: 1434-6036
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract The perturbed angular correlation of the 173 keV—247 keVγ-γ-cascade in111Cd was measured for proton-irradiated and quenched cadmium as a function of the annealing temperature. Three distinct defect configurations were identified by the quadrupole interaction frequencies:D 1 with $$\left| {v_Q } \right| = \left| {\frac{{eQV_{zz} }}{h}} \right| = 103\left( 3 \right)$$ MHz visible for annealing temperaturesT A between 110 K and 130 K,D 2 with |v Q | between 4 and 22 MHz observed for 110 K ≦T A ≦150 K, andD 3 with no electric field gradient. The fractionD 3 is seen from 77 K to room temperature. The defect configurationsD 1 andD 2 are of vacancy type. It is argued thatD 1 originates from simple defect structures (probably mono- or divacancies) whileD 2 is attributed to small vacancy agglomerates. Because of its larger stability,D 3 is ascribed to defect loops. The experiment shows clearly that a vacancy-like defect is mobile in recovery stage III in Cd.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01323688
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  • 7
    Digitale Medien
    Digitale Medien
    Electrically conducting ion tracks in diamond-like carbon films for field emission (1999)
    Springer
    Applied physics 69 (1999), S. 239-240 
    Details
    ISSN: 1432-0630
    Schlagwort(e): PACS: 61.80.Jh; 73.61.Cw; 79.70.+q
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract. Electrically conducting channels in an insulating carbon matrix were produced by 140-MeV Xe ion irradiation. The high local energy deposition of the individual ions along their pathes causes a rearrangement of the carbon atoms and leads to a transformation of the insulating, diamond-like (sp3-bonding) form of carbon into the conducting, graphitic (sp2-bonding) configuration. The conducting ion tracks are clearly seen in the current mapping performed with an atomic force microscope (AFM). These conducting tracks are of possible use in field emission applications.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/s003390050996
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  • 8
    Digitale Medien
    Digitale Medien
    Anomalous muonium in germanium (1979)
    Springer
    Hyperfine interactions 6 (1979), S. 177-180 
    Details
    ISSN: 1572-9540
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01028789
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  • 9
    Digitale Medien
    Digitale Medien
    Local magnetism in superconducting YBa2Cu3O6+x (1991)
    Springer
    Hyperfine interactions 63 (1991), S. 147-153 
    Details
    ISSN: 1572-9540
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract Oxygen-deficient YBa2Cu3O6+x samples were investigated by the muon spin rotation technique in zero external field. In an intermediate oxygen concentration region we find strongly relaxing μSR signals indicating the existence of internal magnetic fields. The strongly relaxing signals were observed only in samples with superconducting transition temperatures below 50 K. As an interpretation of the data we suggest that magnetic ordering and superconductivity coexist in these samples within regions of extensions of a few lattice constants, but not necessarily on the same sites.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF02395997
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  • 10
    Digitale Medien
    Digitale Medien
    A muon spin rotation study of hydrogen in YBa2Cu3O y (1991)
    Springer
    Hyperfine interactions 63 (1991), S. 155-159 
    Details
    ISSN: 1572-9540
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract Superconducting YBa2Cu3O y samples were doped with hydrogen and investigated by the muon spin rotation technique. For hydrogen concentrations above a thresholdx, which depends on the oxygen stoichiometry, we find a well defined precession signal in zero external field. This is a clear indication of magnetic ordering in these samples. In samples with a smaller hydrogen content no magnetic ordering was found. For these samples however, the depolarization rate σ(T→0) as measured in a transverse external field depends strongly on the hydrogen content. Our data are consistent with the assumption that hydrogen acts as an electron donor, filling the hole states in YBa2Cu3O y .
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF02395998
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