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  • 1995-1999  (58)
  • 1990-1994  (42)
  • 1
    Electronic Resource
    Electronic Resource
    Evaluation of Drug-Lipid Association Constants from Microelectrophoretic Mobility Measurements (1995)
    s.l. : American Chemical Society
    Langmuir 11 (1995), S. 1134-1137 
    Details
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/la00004a017
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Diffusion of Au in amorphous Zr x Ni100−x alloys studied by Rutherford Backscattering Spectrometry (1990)
    Springer
    Applied physics 50 (1990), S. 365-368 
    Details
    ISSN: 1432-0630
    Keywords: 66.30h ; 62.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The diffusion coefficients (D) of Au in three binary amorphous Zr x Ni100−x (x=61, 65, and 67) alloys were measured in the temperature range 549–623 K using the technique of the Rutherford Backscattering Spectrometry (RBS). The D values were found to lie in the range 1.0×10−21–9.0×10−20 m2s−1 for different alloys. The activation energy (Q) was calculated in each case on the basis of an observed Arrhenius temperature dependence of D. The activation energy was found to scale with the crystallization temperature (T x) of the alloy. Other published measurements for Au diffusion in amorphous Zr-Ni alloys also appear to follow the scaling relation between Q and T x.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323592
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Air Pollution Due to Coal Washery Projects and Its Abatement Measures (1996)
    Springer
    Environmental management 20 (1996), S. 235-240 
    Details
    ISSN: 1432-1009
    Keywords: KEY WORDS: Air pollution; Coal washery; Abatement
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Notes: Abstract. The demand for washed coal in India has led to the planning of washeries. The sources of air pollution in washeries are described is this paper. A number of new washeries are going to be installed within the vicinity of Jharia Coalfield in eastern India to fulfill the demand for washed coal. Air pollution monitoring was conducted at four coal washeries of Bharat Coking Coal Ltd. (BCCL). Methods adopted for selection of monitoring stations and sampling and analysis of ambient air quality are discussed. Suspended particulate matter (SPM) concentrations in an industrial area, a residential area, and a sensitive area such as a hospital were found to be high and to exceed the limit specified by the Indian Pollution Control Board. NOx and SO2 concentrations in some areas were also found to exceed the specified limits. A high percentage of respirable dust in SPM indicates a health hazard. Benzene-soluble material was found to be 40%, which can be fatal to human health. Suppression measures are discussed for dust, and control measures for air pollution in coal washeries are proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01204007
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Microscopic and Macroscopic Instabilities in Omega Forming Systems (1995)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 42-43 (Apr. 1995), p. 267-276 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/25/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.42-43.267.pdf
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  • 5
    Electronic Resource
    Electronic Resource
    Superplastic Forming of Zircaloy-2 Pressure Tube Material (1996)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 243-245 (Nov. 1996), p. 663-668 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/02/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.243-245.663.pdf
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  • 6
    Electronic Resource
    Electronic Resource
    Identification of a Novel Esterase in Human Breast Cyst Fluid (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 586 (1990), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1990.tb17808.x
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  • 7
    Electronic Resource
    Electronic Resource
    Asymmetric line shapes in the indirect predissociation of the f 1Σu+ Rydberg state of O2 (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 6631-6640 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Rotationally-resolved Beutler–Fano line shapes observed in the photoabsorption spectrum of the (2,0) band of the 3pπuf 1Σu+←X 3Σg− Rydberg system of O2 are interpreted using a coupled-channel Schrödinger equations model. It is found that the f 1Σu+ state is indirectly predissociated by the B 3Σu− continuum, and that the f←X transition borrows oscillator strength primarily from dipole-allowed transitions into the mixed Rydberg-valence states of 3Σu− symmetry. Both the predissociation linewidth and oscillator strength of the (2,0) resonance are controlled by the spin-orbit interaction between the 1Σu+ and 3Σu− components of the 3p-complex. There is some evidence for a destructive quantum interference between the transition amplitude borrowed from the 3pπuE 3Σu−←X 3Σg− transition and that borrowed weakly from the f 1Σu+←b 1Σg+ transition through spin-orbit mixing between the b 1Σg+ and X 3Σg− states. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.469379
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  • 8
    Electronic Resource
    Electronic Resource
    Epitaxial silicon growth conditions and kinetics in low-temperature ArF excimer laser photochemical-vapor deposition from disilane (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1137-1148 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxial Si films were deposited using an ArF excimer laser beam parallel to the substrate to photodissociate Si2H6 at low temperatures (250–350 °C) under laser intensity and Si2H6 partial pressure conditions that result in low initial photofragment concentrations (〈 1013 cm−3). Total pressure and flow conditions were chosen such that there is little secondary photolysis of the initial photofragments. The deposition yield of solid Si from photoexcited Si2H6 is estimated to be 0.20±0.04, indicating that in order for film growth to result solely from the primary products in ArF laser (193 nm) photolysis of Si2H6, a sticking coefficient ≥0.6 must be assigned to the dominant growth precursor. Growth rates vary linearly with laser intensity and Si2H6 partial pressure over a range of 1–15 mJ/cm2 pulse and 5–40 mTorr, respectively. Increasing the distance between the laser-beam axis and the silicon substrate results in a reduction of the growth rate that can be explained by gas-phase chemical reaction of the growth precursors as they diffuse to the substrate. Epitaxy is maintained for temperatures above the threshold for thermal decomposition of surface (SiH2)n chains at ∼250 °C, and for temperatures below the onset of Si2H6 pyrolysis and rapid thermal desorption of surface H2 at ∼350 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351791
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  • 9
    Electronic Resource
    Electronic Resource
    Optical absorption of composites of nanocrystalline silver prepared by electrodeposition (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1027-1029 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silver particles of average diameters in the range 10.3–25.7 nm have been grown within a gel medium by an electrodeposition technique. Detailed optical absorption characteristics in the wavelength range 250–600 nm have been investigated for nanocomposites comprising these particles dispersed in a polystyrene matrix. Absorption maximum occurs at a wavelength around 350 nm, which increases as the metal particle size is increased. Mie theory with the incorporation of a distribution of particle size gives remarkable agreement with the experimental data. The electrical conductivity as extracted from the theoretical analysis for particles with diameters ∼3 nm is found to be less than Mott's minimum metallic conductivity. This indicates the possibility of a metal insulator transition in this system, which appears to be consistent with earlier electrical conductivity measurements. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120954
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  • 10
    Electronic Resource
    Electronic Resource
    Effects of oxidation process on interface roughness of gate oxides on silicon: X-ray reflectivity study (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 433-435 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the effects of the wet and dry oxidation processes on the interfacial roughness and time dependent dielectric breakdown (TDDB) characteristics of the poly-Si/SiO2/Si(100) trilayer. The interface roughness of the oxide layers buried under a thick poly-Si electrode has been investigated using an x-ray reflectivity technique. Analysis of x-ray reflectivity data for the trilayer samples and for a bare oxide film shows that interface roughness of poly-Si electrode/SiO2 interfaces depends on oxidation process while oxide layers have smooth SiO2/Si-subtstrate interfaces. TDDB of the SiO2 layer has also been observed to depend on the oxidation process, indicating that the interface roughness is a crucial factor affecting the TDDB characteristics. The wet oxidized SiO2 film is more stable to dielectric breakdown and has smoother interfaces than the dry oxidized sample. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120780
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