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  • 1995-1999  (2)
  • 1990-1994  (2)
  • 1
    Electronic Resource
    Electronic Resource
    The effect of the planar doping on the electrical transport properties at the Al:n-GaAs(100) interface: Ultrahigh effective doping (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 820-823 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the current density as a function of the applied bias have been performed to study the electronic properties of the Al:n-GaAs(100) interface. The samples were grown by molecular beam epitaxy. A Si planar doping was placed in GaAs(100) at different depths underneath the metal-semiconductor interface and the charge transport across this interface has been investigated. An increasing tunneling contribution to the net current through the Schottky barrier has been observed by decreasing the planar doping depth. For sufficiently small depths, the tunneling current dominated. Planar doping near the metal-semiconductor interface was found to be equivalent, concerning charge transport properties, to a bulk semiconductor doped well beyond the currently achievable limit.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353343
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Thermally stimulated current spectroscopy on silicon planar-doped GaAs samples (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3764-3769 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using thermally stimulated current (TSC) spectroscopy we have identified the presence of several deep traps in low temperature grown (LTG) nonintentionally doped bulk molecular beam epitaxy (MBE)-GaAs and silicon planar-doped MBE-GaAs samples. The experiments of TSC spectroscopy were carried out on a LTG MBE-GaAs epilayer grown at 300 °C and the planar-doped layer with a nominal silicon concentration of 3.4×1012 cm−2. The LTG nonintentionally doped bulk MBE-GaAs sample shows three peaks in the TSC spectra but the planar-doped MBE-GaAs sample shows spectra similar to those of bulk samples grown by the liquid-encapsulated Czochralski and vertical gradient freeze methods. The main achievement is the experimental evidence that the potential well present in the planar-doped sample is effective in detecting the presence of different deep traps previously not seen in LTG bulk MBE-GaAs epilayers due to a shorter carrier lifetime (about 10−12 s) in the conduction band which occurs due to EL2-like deep traps recombination. This fact is evidenced by a strong hopping conduction in LTG bulk MBE-GaAs samples at temperatures lower than 300 K, but not in planar-doped MBE-GaAs samples because the two-dimensional electron gas has a higher mobility than lateral LTG bulk MBE-GaAs epilayers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368588
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of Te as a surfactant on the optical properties of InAs self-assembled quantum dots (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 521-523 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on optical experiments in self-assembled InAs quantum dots grown on (100) and (311)A GaAs surfaces which were precovered with Te. We observe a strong reduction of the luminescence intensity with increasing Te coverage in the (100)-oriented samples. The Te-induced luminescence reduction is, however, much smaller in the (311)A oriented samples. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119597
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    The diffuse behavior of the ferroelectric transition in poly(vinylidene fluoride-trifluoroethylene) copolymers (1994)
    Bognor Regis [u.a.] : Wiley-Blackwell
    Journal of Polymer Science Part B: Polymer Physics 32 (1994), S. 953-959 
    Details
    ISSN: 0887-6266
    Keywords: vinylidene fluoride ; trifluoroethylene copolymers ; ferroelectrics ; phase transitions ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: The ferroelectric-to-paraelectric phase transition in poly(vinylidene fluoride-trifluoroethylene) copolymers has been investigated using calorimetric and dielectric technics. In these materials, as it is well known, the ferro- and paraelectric phases coexist at large temperature intervals, which produces a smearing of the physical anomalies within the transition region. Thus, in order to treat our data, we have used an extended Landau-Devonshire treatment, which has provided a quantitative analysis of the macroscopic behavior of the systems. In particular, the Landau expansion parameters, the sample crystallinities, the spontaneous polarizations, and the coercive electric fields have been estimated for the copolymers with 25, 30, and 40 mol% of trifluoroethylene. © 1994 John Wiley & Sons, Inc.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/polb.1994.090320518
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