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  • 1
    Electronic Resource
    Electronic Resource
    Infrared electroabsorption modulation at normal incidence in asymmetrically stepped AlSb/InAs/GaSb/AlSb quantum wells (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 92-96 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A normal-incidence modulation mechanism is proposed which uses the Stark effect to induce Γ-L transitions in asymmetrically stepped AlSb/InAs/GaSb/AlSb quantum wells (QWs). A significant feature of this structure is the unusual band alignments which localize two deep wells for the Γ and L bands in adjacent layers, i.e., the Γ-valley minimum is in the InAs while the L-valley minimum is in the GaSb. In contrast to a square QW, where the Stark shifts for both Γ and L subbands are in the same direction, the two step wells for Γ and L valleys in the proposed structure are oppositely biased in the presence of an electric field. Therefore, the first Γ and L subbands move toward each other, making the Γ-L crossover occur more efficiently. Near this point, most of the Γ electrons transfer to the L valleys, where they are allowed to make intersubband transitions under normally incident radiation. As a result, the device switches from being transparent to normal-incidence light to strongly absorbing it. The calculations indicate that excellent on/off ratios can be achieved in this structure operating at T≤150 K with electric fields on the order of ∼100 kV/cm for any infrared wavelength within the range of 3–20 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357065
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  • 2
    Electronic Resource
    Electronic Resource
    The effect of methane on photocurrents generated by exciting xenon below its first ionization potential (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 4628-4634 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Photocurrent excitation spectra of xenon and of the xenon–methane absorber–perturber system were studied in cells equipped with LiF windows cooled to ≈−30 °C. The cooling was needed to shift the LiF cutoff so as to enable measurements at photon energies up to the first ionization potential of Xe (12.13 eV). The spectra observed in methane–xenon mixtures were essentially similar to those in neat xenon, demonstrating that the Hornbeck–Molnar process (excitation of a xenon atom–excimer formation–ionization of an excimer) is feasible even in the presence of the molecular perturber CH4 at pressures up to ≈ 105 Pa. The primary effect of CH4 is to decrease the photocurrent, since photons in the energy range in question are absorbed by the methane molecules as well, without photoionizing them. The dependence of the current on methane concentration showed that the above mechanism is not the only one by which methane quenches the current. Moreover, the degree of quenching of the current by methane is dependent on the photon energy. The analysis of this dependence led to the assumption that an excited xenon atom and a methane molecule may form an excimer. Previous results on the Ar:Xe and Kr:Xe systems support this assumption. Peak inversions observed at high pressures in neat xenon, but absent in the CH4:Xe system, are discussed on the basis of prevailing models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.467451
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  • 3
    Electronic Resource
    Electronic Resource
    Computer-controlled system designed to measure photodegradation of photochromic compounds (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 1803-1808 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In this paper, we describe a new, entirely computer-controlled apparatus designed for degradation studies of photochromic compounds. Photodegradation can be performed in three different ways using, in addition to the usual flash mode, the cyclic and continuous modes which more closely simulate daylight exposure conditions. In each mode, the "fatigue resistance'' parameter is computed. Moreover, the spectrokinetic parameters of photomerocyanine species can be obtained from the kinetic mode. Due particularly to the fully computer-controlled experimental setup, the between-day reproducibility of the initial absorbance and fatigue resistance determinations are better than 4% and 6%, respectively. Owing to the modular design of the menu-driven software, written in C language, the apparatus is very flexible and easy to use.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144014
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  • 4
    Electronic Resource
    Electronic Resource
    High-speed circuits for TE discharge lasers and high-voltage applications (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 839-853 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Pulsed transverse electric (TE) glow discharges used to produce population inversions in gas lasers at 1–20 atm require high-speed, high-voltage, high-current capacitor banks. In this article we first review and compare the circuits in common use to produce the required fast, self-sustained glow discharges in CO2, excimer, and N2 lasers. The parameters and circuit types given will be useful to future designers of pulsed gas lasers to design and to optimize any proposed circuit in order to yield any desired operating conditions and parameters. The n-stage circuit types presented are capacitor-transfer (C-C), L-C inversion, Marx bank, and fourfold L-C inversion, with their double-sided counterparts, and also their transmission-line counterparts, such as the Blumlein circuit. A one-parameter differential equation is developed which describes the general series C-L-R circuit. Electrical pulses measured on various lasers are compared with the differential equation solutions for various bank impedances and load resistances. We then present the design and measurements of a new automatically preionized, double-sided, L-C inversion circuit for an 800-mJ, TE CO2 laser, and compare it to previous systems. Methods to lengthen the discharge pulse, and some novel active mode locking techniques are discussed. We compare the L-C inversion circuit, the fourfold L-C inversion circuit, the conventional Marx bank, and the "double Marx bank'' for lasers and other applications, such as pulsed particle accelerators. Finally, we discuss capacitor bank interconnections, electro-optic probe systems, and various triggering methods.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144131
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  • 5
    Electronic Resource
    Electronic Resource
    Band parameters for III–V compound semiconductors and their alloys (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5815-5875 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1368156
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  • 6
    Electronic Resource
    Electronic Resource
    Far-field characteristics of mid-infrared angled-grating distributed feedback lasers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6997-7005 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The far-field emission characteristics of mid-infrared angled-grating distributed-feedback (α-DFB) lasers with W active regions are calculated using a self-consistent beam-propagation formalism that is more general than previous analyses. The theoretical projections are compared with the results of an experimental study of optically pumped α-DFB devices. Near-diffraction-limited beam quality is obtained both theoretically and experimentally for pump stripes ≤50 μm wide. While simulations employing the theoretical linewidth enhancement factor of 1.7 for the homogeneously-broadened W-laser gain spectrum predict that the good beam quality should be retained for stripes as wide as (approximate)200 μm, the data indicate a much more rapid degradation. That finding can be reproduced only by assuming that inhomogeneous broadening increases the structure's linewidth enhancement factor to (approximate)5. The experiments and theory also yield a steering of the output beam to off-normal angles as large as 6° when temperature tuning shifts the gain peak away from the grating resonance. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326858
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  • 7
    Electronic Resource
    Electronic Resource
    Anisotropic screening and ionized impurity scattering in semiconductor superlattices and multiple quantum wells (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6676-6685 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a general theoretical treatment of ionized impurity scattering in semiconductor superlattices. Employing an extension of the quasi-two-dimensional calculations of Stern and Howard to multi-well structures, we explicitly account for nonuniformity of the wavefunction distribution function, arbitrary dispersion relations, scattering by impurities in neighboring periods, and screening by electrons in neighboring wells. Interperiod phenomena are found to be quite significant whenever the screening length is comparable to or longer than the distance between the quantum wells. Calculated results are compared with recent data for modulation-doped and setback-modulation-doped HgTe-CdTe superlattices. However, the discussion emphasizes general aspects of the problem rather than features specific to a particular system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355338
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  • 8
    Electronic Resource
    Electronic Resource
    Normal-incidence electroabsorption in Ga1−xAlxSb/AlSb L-valley quantum wells for 3–5 μm optical modulation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2810-2812 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical investigations are presented of the electric-field dependence of normal-incidence interconduction subband absorption in Ga1−xAlxSb/AlSb L-valley quantum wells. Under an applied electric field of 50 kV/cm, a blue shift of the absorption peak from 4.94 to 4.82 μm was found in a Ga0.7Al0.3Sb/AlSb structure with well width of 25 A(ring). The ability to absorb normally incident light and to achieve significant Stark shifts with bias makes the Ga1−xAlxSb/AlSb L-valley system an attractive choice for the 3–5 μm vertical optical modulators.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354630
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  • 9
    Electronic Resource
    Electronic Resource
    Interface roughness limited electron mobility in HgTe-CdTe superlattices (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2523-2525 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that interface roughness is the dominant low-temperature scattering mechanism for electrons in HgTe-CdTe superlattices with thin wells. Not only do the experimental mobilities follow the expected d6W dependence, but the observed temperature dependence is accurately reproduced by theory when the treatment of interface roughness scattering is generalized for narrow-gap superlattices. The fits to data yield roughness correlation lengths in the range 60–200 A(ring).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104840
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  • 10
    Electronic Resource
    Electronic Resource
    Enhancement of intersubband Stark effects in L-valley step quantum wells for infrared modulation and voltage tunable detection (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1195-1198 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a new type of optical modulator employing two-step Ga1−xAlxSb/Ga1−yAlySb/Ga1−zAlzSb L-valley quantum wells to enhance the Stark shifts of the intersubband transition energy and therefore to achieve large absorption spectral changes with applied bias. Due to the effective-mass anisotropy of electrons in the L-valleys and the tilted growth direction with respect to the valleys, this novel structure can intrinsically absorb normal incidence light. Under an electric field of 50 kV/cm, a blue shift of the absorption peak from 10.9 to 9.8 μm was found from our calculations in a Ga0.7Al0.3Sb/Ga0.5Al0.5Sb/Ga0.4Al0.6Sb structure with a Ga0.7Al0.3Sb well width of 25 A(ring) and a Ga0.5Al0.5Sb step width of 25 A(ring). The ability to absorb normally incident light and to achieve significant Stark effects with bias makes this structure an attractive choice for such high-speed optoelectronic devices as vertical infrared light modulators and voltage tunable photodetectors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354920
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