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  • 1990-1994  (12)
  • 1
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxy of AlAs0.16Sb0.84 and Al0.8Ga0.2As0.14Sb0.86 on InAs substrates (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1242-1244 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial films of AlAs0.16Sb0.84 and Al0.8Ga0.2As0.14Sb0.86 were grown lattice matched on (100) InAs substrates by molecular beam epitaxy. The material was characterized by x-ray diffraction, 4 K photoluminescence, and capacitance-voltage measurement techniques. At 300 K, background acceptor concentrations of 1.8×1015 and 1.4×1016 cm−3 were determined for the unintentionally doped AlAsSb and AlGaAsSb epitaxial layers, respectively. Compensating the AlAsSb and AlGaAsSb epitaxial layers with sulfur doping resulted in high-resistivity material with an effective donor concentration of about 1014 and 1015 cm−3, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102526
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence linewidths in metalorganic vapor phase epitaxially grown ordered and disordered InAlGaP alloys (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5397-5400 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the photoluminescent properties of In0.48(AlyGa1−y)0.52P alloys (0≤y≤0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy—135 meV—has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between "ordered'' domains and the "disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a significant optimization of the optical properties of these materials, including the narrowest low-temperature photoluminescent linewidths reported for all of the In(AlyGa1−y)P alloys exhibiting direct band gaps (4.2 meV for InGaP).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352354
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  • 3
    Electronic Resource
    Electronic Resource
    Accurate multiple-quantum-well growth using real-time optical flux monitoring (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 4-6 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a real-time molecular beam epitaxy control system based on optical flux monitoring (OFM) that is capable of producing thin AlAs/GaAs layers of accurate thickness. We demonstrate the system's ability to detect and compensate for growth rate variations by growing AlAs/GaAs multi-quantum-well structures while deliberately ramping the GaAs growth rate to simulate a severe effusion cell instability. Results show that a sample grown under these conditions without OFM control (i.e., while using conventional timed shutter control) exhibited multiple photoluminescence peaks, indicating that its quantum wells differed in thickness, while a sample grown using OFM shutter control exhibited a single narrow peak, indicating that its quantum wells were nearly identical in width. Analysis of the OFM shutter control sample's photoluminescence linewidth shows that the resulting quantum-well thickness variation were less than 1%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113070
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of pseudomorphic InGaAs channel modulation-doped field-effect-transistor structures grown by molecular-beam epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4029-4034 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper compares Hall-effect measurements combined with rapid thermal annealing (RTA) and low-temperature photoluminescence (4-K PL) as characterization techniques for the optimization of the growth of pseudomorphic InGaAs channel modulation-doped field-effect-transistor structures. The Hall-effect measurements with the RTA were used to determine the optimized growth temperature. 4-K PL was used to determine the quality of the InGaAs quantum well and the In mole fraction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346239
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  • 5
    Electronic Resource
    Electronic Resource
    Growth and characterization of GaInP unicompositional disorder-order-disorder quantum wells (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 587-589 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metalorganic vapor phase epitaxy (MOVPE) is used to grow unicompositional quantum-well (QW) structures, in which the QW and barrier layers are composed of ordered and disordered GaInP, respectively. Transmission electron dark-field micrographs reveal abrupt interfaces between highly ordered QWs and disordered barriers, with no evidence of defect formation. Low-temperature photoluminescence from the structures exhibits relatively broad emission peaks, with emission energy increasing with decreasing QW thickness. The dependence of emission energy on well thickness can be described by a finite square well model only when a type-II band alignment is taken for the heterostructure, in which the conduction band edge of the ordered GaInP QW lies about 135–150 meV below that of the disordered barrier material. These results demonstrate a high degree of control over the ordering process in MOVPE, such that quantum size effects can be realized solely through disorder-order phenomena. Further, the data provide strong support for a type-II (spatially indirect) recombination transition between ordered and disordered GaInP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112307
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  • 6
    Electronic Resource
    Electronic Resource
    Role of substrate threading dislocation density in relaxation of highly strained InGaAs/GaAs quantum well structures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1350-1352 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structures with highly strained InGaAs/GaAs single quantum wells have been grown on GaAs substrates with KOH etch pit densities from ∼1000 to ∼45 000 cm−2. These structures were characterized by photoluminescence microscopy and 77 K Hall measurements to determine the extent to which the substrate threading dislocation density affects the misfit dislocation density at the quantum well interfaces. For well thicknesses near or below the Matthews–Blakeslee critical thickness, similar results are obtained for substrates of different dislocation density. However, for metastable structures significantly above the critical thickness, the misfit dislocation density is a sensitive function of the substrate quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102511
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  • 7
    Electronic Resource
    Electronic Resource
    Excitonic transitions in InGaP/InAlGaP strained quantum wells (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1240-1242 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excitonic transitions in metalorganic vapor phase epitaxially grown InxGa1−xP/In0.48(Al0.7Ga0.3)0.52P strained single quantum-well structures are characterized using low-temperature photoluminescence and photoluminescence excitation (PLE) spectroscopies. The structures consist of several uncoupled quantum wells with thicknesses between 1.2 and 11.3 nm, and compositions x of 0.48 (nominally lattice matched) and 0.56 (∼0.6% biaxial compressive strain). The photoluminescence spectra exhibit intense peaks over the wavelength range 550–650 nm, with linewidths between 7 and 23 meV depending on the well thickness. The PLE spectra reveal strong heavy-hole and light-hole transitions, as well as higher-order (n=2) transitions in the thicker wells. The heavy-hole/light-hole splitting shows little dependence on well thickness in the strained structures, indicating a relatively large conduction band offset of ΔEC∼0.75ΔEG.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110772
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    Paper (German National Licenses)
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  • 8
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    The Medieval Leyrwite: A Historical Note on Female Fornication (1992)
    Harlow, etc. : Periodicals Archive Online (PAO)
    English Historical Review. 107:425 (1992:Oct.) 945 
    Details
    ISSN: 0013-8266
    Topics: History
    Notes: NOTES AND DOCUMENTS
    URL: http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&res_dat=xri:pao:&rft_dat=xri:pao:article:0027-1992-107-25-000005
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  • 9
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    VILLEIN MOBILITY IN THE LATER LIDDLE AGES: THE CASE OF SPALDING PRIORY (1992)
    Nottingham : Periodicals Archive Online (PAO)
    Nottingham medieval studies. 36 (1992) 151 
    Details
    ISSN: 0078-2122
    Topics: History
    URL: http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&res_dat=xri:pao:&rft_dat=xri:pao:article:4241-1992-036-00-000008
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  • 10
    Electronic Resource
    Electronic Resource
    Use of anodic oxidation as a sectioning technique for diffusion measurements in cadmium telluride (1992)
    Springer
    Journal of materials science 3 (1992), S. 211-217 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A radiotracer sectioning technique that can be used successfully for measuring concentration profiles in diffused slices of single-crystal CdTe using anodic oxidation is described. The technique is useful when the penetration of diffusant is 〈5 μm which, if a good resolution is required, involves removing sections as thin as 0.1 μm. Investigations have shown that the best results are obtained using constant-current techniques, in which the voltage across the oxide layer is directly proportional to the thickness of the layer. This implies that the current passing through the layer is space-charge limited. In addition, mesa and non-mesa sectioning geometries are compared, and it is shown that the former sectioning geometry gives the more accurate profiles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00703028
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