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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4756-4758 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In Nd-Fe-B melt-spun ribbon, Ga addition is found to be effective for the orientation of c axis of 2-14-1 grains normal to the ribbon plane even at high wheel surface velocity. A Nd12Fe80B6Nb1Ga1 melt-spun ribbon quenched with optimum wheel surface velocity was found to have textured structure on the free-side surface. Furthermore, this melt-spun ribbon was composed of fine grains of about 30 nm in size which is believed to be enough to provoke intergrain exchange interaction. The remanence and energy product of the field aligned powder of this melt-spun ribbon was about 7% and 20% higher than those of the not-aligned powder, respectively.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1754-1757 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fluorescence emission and excitation spectra of white-light emitting SrS: Pr, F thin film electroluminescent devices have been investigated. It was determined from the results obtained that the dominant electroluminescence mechanism was that the ionization of Pr3+ centers occurs first, then subsequently recombination with electrons occurs, and finally Pr3+ center transitions give rise to luminescence. The emission mechanism of SrS: Pr, F seems to be the same as that of a SrS: Pr, K electroluminescent device, except for the appearance of strong peaks around 610–670 nm. The impurity excitation peak in the lower excitation energy, longer-wavelength region in the FL spectrum may be an important factor for the selection of an effective white-light emitting EL material. The electron paramagnetic resonance experiment of SrS: Pr, F was performed on powder and thin film specimens. The hyperfine structure of an isolated Mn2+ ion was observed in this SrS: Pr, F thin film. This Mn center which was substituted for Sr, seems to contribute to the strong red emission in the white EL spectrum.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8163-8167 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the penetration depth of Nb films was determined from resistive transitions of Nb/AlOx/Nb Josephson junctions in a constant magnetic field applied parallel to the junction planes. Distinct resistance peaks were observed as temperature decreases and those peaks were found to appear when the total flux threading the junction equals an integral multiple of the flux quantum. From this condition, the penetration depth at those peak positions has been determined. The temperature dependence was well described by either the dirty local limit or the two-fluid model. This method can be useful for a highly fluctuating system such as high-temperature superconductors.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2830-2832 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have systematically studied the photoresponse of Y-Ba-Cu-O (YBCO) ultrathin films to a train of picosecond laser pulses. The onset and decay of nonequilibrium superconductivity due to different levels of optical excitation can be observed within the single pulse train. Thermal and nonthermal responses can be clearly identified. In addition, the superconducting film resistance was found to increase progressively with laser power above the onset threshold. The YBCO thin films were possibly excited into a nonequilibrium intermediate (resistive) state from the superconducting state. The laser intensity dependence indicated a nonthermal origin for these voltage pulses.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3188-3190 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality vanadium dioxide (VO2) thin films have been successfully deposited by pulsed laser deposition without postannealing on (0001) and (101¯0) sapphire substrates. X-ray diffraction reveals that the films are highly oriented with (010) planes parallel to the surface of the substrate. VO2 thin films on (0001) and (101¯0) substrates show semiconductor to metal transistions with electrical resistance changes as large as 4×104, 105, respectively. Thin films on (101¯0) substrate have a transition at as low as 55 °C with a hysteresis less than 1 °C. These transition properties are comparable with single crystal VO2. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2153-2155 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report values of critical current (Jc) for Tl2Ba2CaCu2Ox(Tl-2212) epitaxial thin films in magnetic fields up to 5 T and at temperatures of 5, 40, and 77 K determined from dc magnetization and using a standard transport technique. Although we verify the applicability of Bean's model [Rev. Mod. Phys. 36, 31 (1964)], these values only agree at small applied magnetic fields and at low temperatures. Our results indicate that the differences observed in Jc's determined from the two techniques may be understood by considering only the field-dependent, nonlinear E-J characteristic and the "effective'' electric-field criterion used in determining Jc.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Scandinavian journal of medicine & science in sports 1 (1991), S. 0 
    ISSN: 1600-0838
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine , Sports Science
    Notes: Effects of power training with stretch-shortening cycle (SSC) exercises on mechanical efficiency (ME) were investigated with 9 young women who trained 3 times a week for 4 months. The training included various types of jumping exercises. Before and after the training as well as after the detraining (2 months) the subjects performed 6 different submaximal exercises with a special sledge apparatus. Each exercise involved 60 muscle actions lasting for a total of 3 min per testing condition. The work intensities were determined individually according to the recordings of distance obtained during the single maximal concentric exercises. The training caused the greatest changes of ME in conditions of higher prestretch intensities. The ME values changed from 49.3 ± 12.9% to 55.4 ± 12.1% in pure eccentric exercises and from 39.5 ± 4.6% to 46.1 ± 5.0% in SSC exercises during the training. After the training, the subjects preactivated their leg extensor muscles earlier before the impact, and the eccentric working phase was more powerful, because of higher tendomuscular stiffness. Higher preactivation of the measured muscles, higher flexion of knee and increased dorsiflexion of ankle joints in the beginning of contact caused the increased stiffness, possibly through more powerful reflex activation. At the same time the metabolic demands of muscles decreased, causing the increases of ME.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 26 (1991), S. 3223-3234 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The wettability and reactivity of pressureless sintered Si3N4 by powdered Cu-Ti alloy were investigated using sessile drop tests conducted in a vacuum. Bonding of Si3N4 to itself was also carried out and joint strength was evaluated by compressive shear testing. The correlation of wetting behaviour with reaction and bond strength was interpreted. The wettability of Cu-Ti alloys on Si3N4 was improved greatly by addition of titanium up to 50 wt%. However, the reaction-layer thickness was increased up to 10 wt% and thereafter decreased up to 50 wt%. We propose the dovetail model which describes the reaction-layer growth behaviour with titanium. As the titanium content was increased, it tended to form a continuous thin reaction layer which greatly improved the wettability. From metallographic and XRD analyses, TiN and Ti suicide were found in the reaction layer. The thermodynamic reaction for TiN formation was suggested to be Si3N4(s) + 4Ti (1 − sol) = 4TiN(s) + 3Si(s). Ti-silicide might be formed during cooling by the reaction with Ti and Si which had been decomposed from Si3N4, diffused to and dissolved in the liquid Cu-rich alloy. The reaction layer growth was controlled by diffusion of nitrogen or titanium in the reaction layer according to the titanium concentration. The shear strength of Si3N4 to Si3N4 was affected by the morphology and thickness of the reaction layer rather than the wettability. As the titanium content increased, shear strength also increased rapidly up to 5 wt% and then slowly up to 50 wt%. As the reaction temperature and time were increased, shear strength was lowered due to the greater thickness of the reaction layer despite improved wettability.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1432-2242
    Keywords: Callosobruchus ; DNA Markers ; Insect ; Legume ; Restriction fragment length polymorphisms
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary Bruchids (genus Callosobruchus) are among the most destructive insect pests of mungbeans and other members of the genus, Vigna. Genetic resistance to bruchids was previously identified in a wild mungbean relative, TC1966. To analyze the underlying genetics, accelerate breeding, and provide a basis for map-based cloning of this gene, we have mapped the TC1966 bruchid resistance gene using restriction fragment length polymorphism (RFLP) markers. Fifty-eight F2 progeny from a cross between TC1966 and a susceptible mungbean cultivar were analyzed with 153 RFLP markers. Resistance mapped to a single locus on linkage group VIII, approximately 3.6 centimorgans from the nearest RFLP marker. Because the genome of mungbean is relatively small (estimated to be between 470 and 560 million base pairs), this RFLP marker may be suitable as a starting point for chromosome walking. Based on RFLP analysis, an individual was also identified in the F2 population that retained the bruchid resistance gene within a tightly linked double crossover. This individual will be valuable in developing resistant mungbean lines free of linkage drag.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    European journal of applied physiology 59 (1990), S. 470-470 
    ISSN: 1439-6327
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Type of Medium: Electronic Resource
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