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  • 1
    Electronic Resource
    Electronic Resource
    High-performance Zn-doped-base InP/InGaAs double-heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1111-1113 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the successful growth of high-quality InP/InGaAs double-heterojunction bipolar transistors with heavily Zn-doped base layers (p=4×1019 cm−3) using metalorganic vapor phase epitaxy. Interrupting the growth for 30 min after growing a heavily Si-doped subcollector (n=2×1019 cm−3) is shown to eliminate the excessive nonequilibrium group III interstitials that enhance abnormal Zn diffusivity in the subsequently grown base region. Gummel plots of the fabricated microwave transistors show that they have ideal turn-on characteristics in spite of having only 5-nm-thick undoped spacer layers inserted between the emitter and base. The transistors obtain a maximum oscillation frequency fmax of 178 GHz and a current gain cutoff frequency fT of 126 GHz.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110844
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  • 2
    Electronic Resource
    Electronic Resource
    Superconducting melt-textured thin films prepared by a spray pyrolysis method (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4367-4369 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: YBa2Cu3O7−x thin films were prepared on (100)yttria-stabilized zirconia (YSZ) by a spray pyrolysis method. The films were fired rapidly at 1000–1020 °C in flowing helium atmosphere and then annealed in oxygen. These melt-textured thin films had the aligned grain structure consisting of large, platelike grains over a wide area. The films thus formed showed relatively high critical current density Jc more than 4000 A/cm2, and the best Jc of the film fired at 1010 °C was 4800 A/cm2 at 77 K in zero magnetic field. The melt-textured growth processing was found to be more useful for the enhancement of the Jc value of thin films than the conventional sintering method.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344930
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    High-speed InP/InGaAs double-heterostructure bipolar transistors with suppressed collector current blocking (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2372-2374 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InP/InGaAs double-heterostructure bipolar transistors (DHBTs), incorporating a new collector structure featuring "pn pair doping'' in the heterointerface vicinity, have been fabricated using a low-pressure metalorganic chemical vapor deposition (MOCVD) method. These transistors provide high collector current densities over 1×105 A/cm2, indicating the successful suppression of current blocking. S-parameter measurements determine the high current gain cutoff frequencies of 130 GHz. These values favorably compare with those of conventional InGaAs-collector HBTs fabricated for comparison, suggesting that the InP collectors have excellent electron transport properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109368
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  • 4
    Electronic Resource
    Electronic Resource
    Osteoclast-like giant cell tumour of the gallbladder (1992)
    Springer
    Virchows Archiv 420 (1992), S. 359-366 
    Details
    ISSN: 1432-2307
    Keywords: Gallbladder ; Osteoclast-like giant cell tumour ; Vimentin
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary We describe a rare carcinoma of the gallbladder containing osteoclast-like giant cells. Well-differentiated adenocarcinoma was found in the mucosa of the fundus, and osteoclast-like giant cells were present mainly in a haemorrhagic mass protruding from the mucosal surface. The metastatic hepatic tumour was composed chiefly, if not exclusively, of osteoclastoma-like cells, but minute carcinomatous elements were also present. There was an apparent transition between the giant cells and tubular structures in both the gallbladder tumour and hepatic tumour. However, ultrastructural study did not reveal any evidence of epithelial differentiation in the giant cells. Immunohistochemical studies suggested that the mononuclear and giant cells were mesenchymal and histiocytic in nature (vimentin and factor XIII a positive). A few exceptional giant cells transforming from the fine tubular structure were positive for epithelial membrane antigen. In conclusion, the osteoclast-like giant cell tumour component was thought to represent mesenchymal metaplasia in pre-existent adenocarcinoma.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01600216
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  • 5
    Electronic Resource
    Electronic Resource
    Ventricular inversion without transposition of the great arteries: A rare anomaly associated with left-sided (tricuspid) atrioventricular valve atresia and unroofed coronary sinus (1994)
    Springer
    Pediatric cardiology 15 (1994), S. 146-150 
    Details
    ISSN: 1432-1971
    Keywords: Isolated ventricular inversion ; Tricuspid valve atresia ; Unroofed coronary sinus
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Isolated ventricular inversion with concomitant atresia of the left-sided (tricuspid) atrioventricular valve has previously been reported in the English literature in only two patients, and they died during early infancy. We describe the clinical, two-dimensional echocardiographic and angiocardiographic features in a 10-year-old boy with these rare cardiac anomalies in association with unroofed coronary sinus, which compensated for the restrictive atrial septal defect. This is the first published report of this combination of cardiac anomalies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00796328
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  • 6
    Electronic Resource
    Electronic Resource
    Ester-type photosensitive polyimide precursor with low thermal expansion coefficient (1992)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 32 (1992), S. 1618-1622 
    Details
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: For an ester-type photosensitive polyimide precursor of low thermal expansion coefficient, the oxygen concentration in the curing process and the molecular weight of the polyimide precursor were found to control the properties of the polyimide. The effects of these factors on the thermal expansion coefficient, tensile strength, and modulus of polyimide film were investigated. Based on these results, a photosensitive polyimide with low thermal expansion coefficient, called the PIMEL TL-series, was developed. Crack and delamination free multilayers were successfully achieved using this newly developed product.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pen.760322114
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